MMSD103T1 Preferred Device High Voltage Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C PF 400 3.2 mW mW/°C Peak Forward Surge Current 1 Cathode 2 Anode 2 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJL 174 °C/W Thermal Resistance, Junction−to−Ambient RqJA 492 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1 SOD−123 CASE 425 STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 1 JS M G G JS = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping † MMSD103T1 SOD−123 3000 / Tape & Reel MMSD103T1G SOD−123 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 3 1 Publication Order Number: MMSD103T1/D MMSD103T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit − − 1.0 100 250 − − − 1000 1250 OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) mAdc IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns 820 W +10 V 2.0 k IF 100 mH tr 0.1 mF tp IF t trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR VR iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 3500 2500 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 3000 TA = −55°C 2000 1500 TA = 25°C 1000 TA = 150°C 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 7000 6000 5000 4000 3000 6 5 4 3 2 1 0 TA = 150°C TA = 25°C TA = −55°C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 2 100 200 300 MMSD103T1 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 C b SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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