DATA SHEET ED1002CT~ED1006CT SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER VOLTAGE 200 to 600 Volts CURRENT TO-251AB 10 Amperes Unit : inch (mm) FEATURES • For surface mounted applications .264(6.7) .248(6.3) • Low profile package .098(2.5) .082(2.1) • Built-in strain relief .024(0.6) .016(0.4) .063(1.6) .047(1.2) .216(5.5) .200(5.1) • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory .225(5.7) .209(5.3) Flammability Classification 94V-O • Glass passivated junction .307(7.8) substance directive request .283(7.2) • Pb free product are available : 99% Sn above can meet Rohs environment .071(1.8) .051(1.3) .032(0.8) .012(0.3) MECHANICALDATA .02(0.5) Case: D PAK/TO-252 molded plastic .09 .09 (2.3) (2.3) Terminals: Solder plated, solderable per MIL-STD-202G,Method 208 Polarity: Color band denotes cathode Standard packaging: 16mm tape (EIA-481) Weight: 0.015 ounce, 0.4 gram. MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% PARAMETER SYMBOL E D 1002C T E D 1003C T E D 1004C T E D 1006C T UNITS Maxi mum Recurrent Peak Reverse Voltage VRRM 200 300 400 600 V Maxi mum RMS Voltage VRMS 140 210 280 420 V Maxi mum D C Blocki ng Voltage VDC 200 300 400 600 V Maxi mum Average Forward C urrent .375"(9.5mm) lead length at Tc=100OC Peak Forward Surge C urrent, 8.3ms si ngle half si ne-wave superi mposed on rated load(JED EC method) IAV 10.0 A IFSM 100 A Maxi mum Forward Voltage at 5.0A VF Maxi mum D C Reverse C urrent TA=25 OC at Rated D C Blocki ng VoltageTA=100 OC IR 5.0 50 uA Maxi mum Reverse Recovery Ti me (Note 1) TRR 35 ns RθJC RθJA 11 80 TJ,TSTG -55 TO +150 Maxi mum thermal Resi stance (Note 2) Operati ng and Storage Temperature RangeTJ,TSTG 0.95 1.3 1.7 V O C/W O C NOTES: 1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A. 2. Mounted on P.C. Board with 14mm2 (.013mm thick) copper pad areas. 3. Both Bonding and Chip structure are available. REV.0-MAR.21.2005 PAGE . 1 10 8 6 4 .375"9.5mm LEADLENGHTS RESISTIVEORINDUCTIVE LOAD 2 0 0 20 40 60 80 100 120 140 160 150 PEAK FORWARD SURGE CURRENT, AVERAGE FORWARD CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES 125 8.3ms Single Half Since-Wave JEDEC Method 100 75 50 25 0 O 1 2 5 CASE TEMPERAURE, C Fig.1- FORWARD CURRENT DERATING CURVE 10 10 20 50 100 NO. OF CYCLE AT 60HZ Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT 10 3 10 2 10 1 FORWARD CURRENT, AMPERES REVERSE CURRENT, uA 50-200V O T J =125 C 10 0 10 -1 10 -2 O T J= 2 5 C 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE, % Fig.3- TYPICAL REVERSE CHARACTERISTIC REV.0-MAR.21.2005 300-400V 1.0 O TA=2 5 C 0.1 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLATGE, VOLTS Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC PAGE . 2