PANJIT ED1004CT

DATA SHEET
ED1002CT~ED1006CT
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
VOLTAGE
200 to 600 Volts
CURRENT
TO-251AB
10 Amperes
Unit : inch (mm)
FEATURES
• For surface mounted applications
.264(6.7)
.248(6.3)
• Low profile package
.098(2.5)
.082(2.1)
• Built-in strain relief
.024(0.6)
.016(0.4)
.063(1.6)
.047(1.2)
.216(5.5)
.200(5.1)
• Easy pick and place
• Superfast recovery times for high efficiency
• Plastic package has Underwriters Laboratory
.225(5.7)
.209(5.3)
Flammability Classification 94V-O
• Glass passivated junction
.307(7.8)
substance directive request
.283(7.2)
• Pb free product are available : 99% Sn above can meet Rohs environment
.071(1.8)
.051(1.3)
.032(0.8)
.012(0.3)
MECHANICALDATA
.02(0.5)
Case: D PAK/TO-252 molded plastic
.09 .09
(2.3) (2.3)
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208
Polarity: Color band denotes cathode
Standard packaging: 16mm tape (EIA-481)
Weight: 0.015 ounce, 0.4 gram.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL
E D 1002C T
E D 1003C T
E D 1004C T
E D 1006C T
UNITS
Maxi mum Recurrent Peak Reverse Voltage
VRRM
200
300
400
600
V
Maxi mum RMS Voltage
VRMS
140
210
280
420
V
Maxi mum D C Blocki ng Voltage
VDC
200
300
400
600
V
Maxi mum Average Forward C urrent .375"(9.5mm)
lead length at Tc=100OC
Peak Forward Surge C urrent, 8.3ms si ngle half si ne-wave
superi mposed on rated load(JED EC method)
IAV
10.0
A
IFSM
100
A
Maxi mum Forward Voltage at 5.0A
VF
Maxi mum D C Reverse C urrent TA=25 OC
at Rated D C Blocki ng VoltageTA=100 OC
IR
5.0
50
uA
Maxi mum Reverse Recovery Ti me (Note 1)
TRR
35
ns
RθJC
RθJA
11
80
TJ,TSTG
-55 TO +150
Maxi mum thermal Resi stance (Note 2)
Operati ng and Storage Temperature RangeTJ,TSTG
0.95
1.3
1.7
V
O
C/W
O
C
NOTES:
1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
2. Mounted on P.C. Board with 14mm2 (.013mm thick) copper pad areas.
3. Both Bonding and Chip structure are available.
REV.0-MAR.21.2005
PAGE . 1
10
8
6
4
.375"9.5mm LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
2
0
0
20
40
60
80
100
120
140
160
150
PEAK FORWARD SURGE CURRENT,
AVERAGE FORWARD CURRENT,
AMPERES
RATING AND CHARACTERISTIC CURVES
125
8.3ms Single
Half Since-Wave
JEDEC Method
100
75
50
25
0
O
1
2
5
CASE TEMPERAURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
10
10
20
50
100
NO. OF CYCLE AT 60HZ
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
3
10
2
10
1
FORWARD CURRENT, AMPERES
REVERSE CURRENT, uA
50-200V
O
T J =125 C
10
0
10
-1
10
-2
O
T J= 2 5 C
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
Fig.3- TYPICAL REVERSE CHARACTERISTIC
REV.0-MAR.21.2005
300-400V
1.0
O
TA=2 5 C
0.1
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLATGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
PAGE . 2