MMSZ4687-V SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 to 43 Volts POWER Unit: inch (mm) SOD-123 500 mWatts FEATURES • 500mW Power Dissipation .110(2.8) .098(2.5) .008(.20)MAX • In compliance with EU RoHS 2002/95/EC directives .053(1.35) .037(0.95) .028(0.7) .019(0.5) • Ideally Suited for Automated Assembly Processes MECHANICAL DATA • Case: SOD-123, Molded Plastic .071(1.8) .055(1.4) .154(3.90) .141(3.60) • Planar Die construction • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: See Diagram Below .016(.40)MIN .005(.12)MAX • Approx. Weight: 0.01grams • Mounting Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol Value Units Maximum Power Dissipation @TA=25OC (Notes A) PD 500 mW Operating Junction and StorageTemperature Range TJ -50 to +150 O C NOTES: A. Mounted on 5.0mm 2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. STAD-FEB.14.2007 PAGE . 1 MMSZ4687-V SERIES Nominal Zener Voltage Part Number Max Reverse Leakage Current Max. Zener Impedance V Z @ IZT Z ZT@ IZT I R @ VR Z ZK @ IZK Marking C ode No m. V M i n. V M a x. V Ω mA Ω mA µA V MMSZ4687-V 4.3 4.09 4.52 - 0.05 - - 4 2 CP MMSZ4688-V 4.7 4.47 4.94 - 0.05 - - 10 3 CT MMSZ4689-V 5.1 4.85 5.36 - 0.05 - - 10 3 CU MMSZ4690-V 5.6 5.32 5.88 - 0.05 - - 10 4 CV MMSZ4691-V 6.2 5.89 6.51 - 0.05 - - 10 5 CA MMSZ4692-V 6.8 6.46 7.14 - 0.05 - - 10 5.1 CX MMSZ4693-V 7.5 7.13 7.88 - 0.05 - - 10 5.7 CY MMSZ4694-V 8.2 7.79 8.61 - 0.05 - - 1 6.2 CZ MMSZ4695-V 8.7 8.27 9.14 - 0.05 - - 1 6.6 DC MMSZ4696-V 9.1 8.65 9.56 - 0.05 - - 1 6.9 DD MMSZ4697-V 10 9.50 10.50 - 0.05 - - 1 7.6 DE MMSZ4698-V 11 10.50 11.60 - 0.05 - - 0.05 8.4 DF MMSZ4699-V 12 11.40 12.60 - 0.05 - - 0.05 9.1 DH MMSZ4700-V 13 12.40 13.70 - 0.05 - - 0.05 9.8 DJ MMSZ4701-V 14 13.30 14.70 - 0.05 - - 0.05 10.6 DK MMSZ4702-V 15 14.30 15.80 - 0.05 - - 0.05 11.4 DM MMSZ4703-V 16 15.20 16.80 - 0.05 - - 0.05 12.1 DN MMSZ4704-V 17 16.20 17.90 - 0.05 - - 0.05 12.9 DP MMSZ4705-V 18 17.10 18.90 - 0.05 - - 0.05 13.6 DT MMSZ4706-V 19 18.10 20.00 - 0.05 - - 0.05 14.4 DU MMSZ4707-V 20 19.00 21.00 - 0.05 - - 0.01 15.2 DV MMSZ4708-V 22 20.90 23.10 - 0.05 - - 0.01 16.7 DA MMSZ4709-V 24 22.80 25.20 - 0.05 - - 0.01 18.2 DZ MMSZ4710-V 25 23.80 26.30 - 0.05 - - 0.01 19 DY MMSZ4711-V 27 25.70 28.40 - 0.05 - - 0.01 20.4 EA MMSZ4712-V 28 26.60 29.40 - 0.05 - - 0.01 21.2 EC MMSZ4713-V 30 28.50 31.50 - 0.05 - - 0.01 22.8 ED MMSZ4714-V 33 31.40 34.70 - 0.05 - - 0.01 25 EE MMSZ4715-V 36 34.20 37.80 - 0.05 - - 0.01 27.3 EF MMSZ4716-V 39 37.10 41.00 - 0.05 - - 0.01 29.6 EH MMSZ4717-V 43 40.90 45.20 - 0.05 - - 0.01 32.6 EJ STAD-FEB.14.2007 PAGE . 2 MMSZ4687-V SERIES Typical Characteristics TKVZ - Temperature Coefficient of VZ (10-4/K) Ptot - Total Power Dissipation (mW) Tamb = 25 °C unless otherwise specified 600 500 400 300 200 100 0 0 40 80 120 200 160 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature 10 5 IZ = 5 mA 0 -5 10 0 200 CD - Diode Capacitance (pF) Tj = 25 °C 100 IZ = 5 mA 10 150 VR = 2 V Tj = 25 °C 100 50 0 1 0 5 10 15 0 25 20 5 15 20 25 Figure 5. Diode Capacitance vs. Z-Voltage 100 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K -4 8 x 10 /K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 IF - Forward Current (mA) VZtn - Relative Voltage Change Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 0.8 - 60 10 VZ - Z-Voltage (V) VZ - Z-Voltage (V) 10 Tj = 25 °C 1 0.1 0.01 0.001 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 3. Typical Change of Working Voltage vs. Junction Temperature STAD-FEB.14.2007 50 20 40 30 VZ - Z-Voltage (V) Figure 4. Temperature Coefficient of Vz vs. Z-Voltage 1000 VZ - Voltage Change (mV) 15 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage PAGE . 3 MMSZ4687-V SERIES rZ - Differential Z-Resistance (Ω) 100 IZ - Z-Current (mA) 80 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 4 6 12 8 1000 20 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 0 5 VZ - Z-Voltage (V) 10 15 20 25 VZ - Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage Figure 9. Differential Z-Resistance vs. Z-Voltage IZ - Z-Current (mA) 50 Ptot = 500 mW Tamb = 25 °C 40 30 20 10 0 15 20 25 35 30 VZ - Z-Voltage (V) Zthp - Thermal Resistance for Pulse Cond. (KW) Figure 8. Z-Current vs. Z-Voltage 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 tP - Pulse Length (ms) Figure 10. Thermal Response STAD-FEB.14.2007 PAGE . 4 MMSZ4687-V SERIES MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.01.2006 PAGE . 5