BZT55C... TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z–Diodes Features Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9373 Voltage stabilization Absolute Maximum Ratings Tj = 25C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA C C Symbol RthJA Value 500 Unit K/W Maximum Thermal Resistance Tj = 25C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Characteristics Tj = 25C Parameter Forward voltage Rev. A1: 12.12.1994 Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V 1 BZT55C... Type BZT55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) 2 VZnorm V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT for VZT 1) and rzjT mA V 5 2.28 to 2.56 < 85 5 2.5 to 2.9 < 85 5 2.8 to 3.2 < 90 5 3.1 to 3.5 < 90 5 3.4 to 3.8 < 90 5 3.7 to 4.1 < 90 5 4.0 to 4.6 < 90 5 4.4 to 5.0 < 80 5 4.8 to 5.4 < 60 5 5.2 to 6.0 < 40 5 5.8 to 6.6 < 10 5 6.4 to 7.2 <8 5 7.0 to 7.9 <7 5 7.7 to 8.7 <7 5 8.5 to 9.6 < 10 5 9.4 to 10.6 < 15 5 10.4 to 11.6 < 20 5 11.4 to 12.7 < 20 5 12.4 to 14.1 < 26 5 13.8 to 15.6 < 30 5 15.3 to 17.1 < 40 5 16.8 to 19.1 < 50 5 18.8 to 21.2 < 55 5 20.8 to 23.3 < 55 5 22.8 to 25.6 < 80 5 25.1 to 28.9 < 80 5 28 to 32 < 80 5 31 to 35 < 80 5 34 to 38 < 80 2.5 37 to 41 < 90 2.5 40 to 46 < 90 2.5 44 to 50 < 110 2.5 48 to 54 < 125 2.5 52 to 60 < 135 2.5 58 to 66 < 150 2.5 64 to 72 < 200 2.5 70 to 79 < 250 TELEFUNKEN Semiconductors rzjk at < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500 tp/T ≤ 100 ms, tighter tolerances available on request. 2) IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR and IR 2) at A A < 100 < 50 < 10 < 50 <4 < 40 <2 < 40 <2 < 40 <2 < 40 <1 < 20 < 0.5 < 10 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <2 < 0.1 <5 < 0.1 <5 < 0.1 <5 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 < 0.1 < 10 VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 TKVZ %/K –0.09 to –0.06 –0.09 to –0.06 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.08 to –0.05 –0.06 to –0.03 –0.05 to +0.02 –0.02 to +0.02 –0.05 to +0,05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 at Tj = 150°C Rev. A1: 12.12.1994 BZT55C... TELEFUNKEN Semiconductors Typical Characteristics (Tj = 25C unless otherwise specified) 1000 500 VZ – Voltage Change ( mV ) Ptot – Total Power Dissipation ( mW ) 600 400 300 200 100 Tj = 25°C 100 IZ=5mA 10 0 1 40 80 120 200 160 Tamb – Ambient Temperature ( °C ) 95 9602 1.3 VZtn – Relative Voltage Change VZtn=VZt/VZ(25°C) TKVZ=10 10–4/K 8 6 10–4/K 10–4/K 4 2 10–4/K 10–4/K 1.1 0 –2 10–4/K 1.0 –4 10–4/K 0.9 0.8 –60 0 60 120 180 240 Tj – Junction Temperature ( °C ) 95 9599 10 15 20 25 VZ – Z-Voltage ( V ) Figure 2 : Typical Change of Working Voltage under Operating Conditions at Tamb=25C 15 10 5 IZ=5mA 0 –5 0 10 20 30 40 50 VZ – Z-Voltage ( V ) 95 9600 Figure 3 : Typical Change of Working Voltage vs. Junction Temperature Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage 200 100 IF – Forward Current ( mA ) C D – Diode Capacitance ( pF ) 5 95 9598 Figure 1 : Total Power Dissipation vs. Ambient Temperature 1.2 0 TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 0 150 VR = 2V Tj = 25°C 100 50 0 10 Tj = 25°C 1 0.1 0.01 0.001 0 5 10 15 20 VZ – Z-Voltage ( V ) 95 9601 Figure 5 : Diode Capacitance vs. Z–Voltage Rev. A1: 12.12.1994 25 0 95 9605 0.2 0.4 0.6 0.8 1.0 VF – Forward Voltage ( V ) Figure 6 : Forward Current vs. Forward Voltage 3 BZT55C... TELEFUNKEN Semiconductors 80 40 IZ – Z-Current ( mA ) 50 IZ – Z-Current ( mA ) 100 Ptot=500mW Tamb=25°C 60 40 20 Ptot=500mW Tamb=25°C 30 20 10 0 0 0 4 8 12 16 20 15 VZ – Z-Voltage ( V ) 95 9604 95 9607 20 25 30 35 VZ – Z-Voltage ( V ) Figure 8 : Z–Current vs. Z–Voltage Figure 7 : Z–Current vs. Z–Voltage r Z – Differential Z-Resistance ( W ) 1000 IZ=1mA 100 5mA 10 10mA Tj = 25°C 1 0 5 10 15 20 25 VZ – Z-Voltage ( V ) 95 9606 Z thp – Thermal Resistance for Pulse Cond. (K/W) Figure 9 : Differential Z–Resistance vs. Z–Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 RthJA=300K/W DT=Tjmax–Tamb tp/T=0.01 tp/T=0.1 tp/T=0.02 iZM=(–VZ+(VZ2+4rzjDT/Zthp)1/2)/(2rzj) tp/T=0.05 1 10–1 100 101 102 tp – Pulse Length ( ms ) 95 9603 Figure 10 : Thermal Response 4 Rev. A1: 12.12.1994 BZT55C... TELEFUNKEN Semiconductors Dimensions in mm Cathode Identification technical drawings according to DIN specifications 94 9372 0.35 0.30 Quadro MELF Glass Case similar to JEDEC DO 213 AA Rev. A1: 12.12.1994 0.35 0.30 1.5 1.3 3.7 3.3 5 BZT55C... TELEFUNKEN Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements and 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) will soon severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of any ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA and 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances. We reserve the right to make changes to improve technical design without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423 6 Rev. A1: 12.12.1994