K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft 1 Draft Date Remark July 25, 2004 Advance Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES GENERAL DESCRIPTION • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Code) Block : Extra 64K Byte block • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA • WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at VHH : 9µs/word • Erase Suspend/Resume • Unlock Bypass Program • Hardware RESET Pin • Command Register Operation • Block Group Protection / Unprotection • Supports Common Flash Memory Interface • Industrial Temperature : -40°C to 85°C • Endurance : 100,000 Program/Erase Cycles Minimum • Data Retention : 10 years • Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D1716U NOR Flash consists of two banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The device′s fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the standard and industrial temperature ranges. The K8D1716U NOR Flash Memory is created by using Samsung's advanced CMOS process technology. This device is available in 48 pin TSOP1 package. The device is compatible with EPROM applications to require high-density and costeffective nonvolatile read/write storage solutions. PIN DESCRIPTION Pin Name A0 - A19 PIN CONFIGURATION A15 A14 A13 A12 A11 A10 A9 A8 A19 N.C WE RESET N.C WP/ACC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-pin TSOP1 Standard Type 12mm x 20mm DQ0 - DQ14 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 DQ15/A-1 A16 BYTE Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE Vss CE A0 BYTE Address Inputs Data Inputs / Outputs DQ15 Data Input / Output A-1 LSB Address Word / Byte Selection CE Chip Enable OE Output Enable RESET Hardware Reset Pin RY/BY Ready/Busy Output WE WP/ACC Note : Please refer to the package dimension. Pin Function Write Enable Hardware Write Protection/Program Acceleration Vcc Power Supply VSS Ground N.C No Connection SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM Bank1 Address Vcc Vss X Dec Bank1 Cell Array Y Dec CE OE WE BYTE RESET RY/BY WP/ACC Latch & Control Bank1 Data-In/Out I/O Interface & Bank Control Bank2 Data-In/Out Y Dec Bank2 Address X Dec Latch & Control Bank2 Cell Array A0~A19 Erase Control DQ15/A-1 DQ0~DQ14 Program Control 3 High Voltage Gen. Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY ORDERING INFORMATION K 8 D 17 1 6 U T B - T I 0 7 Access Time 07 = 70 ns 08 = 80 ns 09 = 90 ns Samsung NOR Flash Memory Device Type Dual Bank Boot Block Operating Temperature Range C = Commercial Temp. (0 °C to 70 °C) I = Industrial Temp. (-40 °C to 85 °C) Bank Division 17 = 8Mbits + 8Mbits Package Y = 48 TSOP1 Organization x16 Version B = 3rd Generation Operating Voltage Range 2.7V to 3.6V Block Architecture T = Top Boot Block B = Bottom Boot Block Table 1. PRODUCT LINE-UP Part No. -7 -8 Vcc -9 2.7V~3.6V Max. Address Access Time (ns) 70ns 80ns 90ns Max. CE Access Time (ns) 70ns 80ns 90ns Max. OE Access Time (ns) 25ns 25ns 35ns Table 2. K8D1716U DEVICE BANK DIVISIONS Device Part Number K8D1716U Bank 1 Bank 2 Mbit Block Sizes Mbit Block Sizes 8 Mbit Eight 8 Kbyte/4 Kword, fifteen 64 Kbyte/32 Kword 8 Mbit Sixteen 64 Kbyte/32 Kword 4 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Table 3. Top Boot Block Address (K8D1716UT) K8D1716UT Bank1 Bank2 Address Range Block A19 A18 A17 A16 A15 A14 A13 A12 Block Size (KW/KB) Word Mode Byte Mode BA38 1 1 1 1 1 1 1 1 4/8 FF000H-FFFFFH 1FE000H-1FFFFFH BA37 1 1 1 1 1 1 1 0 4/8 FE000H-FEFFFH 1FC000H-1FDFFFH BA36 1 1 1 1 1 1 0 1 4/8 FD000H-FDFFFH 1FA000H-1FBFFFH BA35 1 1 1 1 1 1 0 0 4/8 FC000H-FCFFFH 1F8000H-1F9FFFH BA34 1 1 1 1 1 0 1 1 4/8 FB000H-FBFFFH 1F6000H-1F7FFFH BA33 1 1 1 1 1 0 1 0 4/8 FA000H-FAFFFH 1F4000H-1F5FFFH BA32 1 1 1 1 1 0 0 1 4/8 F9000H-F9FFFH 1F2000H-1F3FFFH BA31 1 1 1 1 1 0 0 0 4/8 F8000H-F8FFFH 1F0000H-1F1FFFH BA30 1 1 1 1 0 X X X 32 / 64 F0000H-F7FFFH 1E0000H-1EFFFFH BA29 1 1 1 0 1 X X X 32 / 64 E8000H-EFFFFH 1D0000H-1DFFFFH BA28 1 1 1 0 0 X X X 32 / 64 E0000H-E7FFFH 1C0000H-1CFFFFH BA27 1 1 0 1 1 X X X 32 / 64 D8000H-DFFFFH 1B0000H-1BFFFFH BA26 1 1 0 1 0 X X X 32 / 64 D0000H-D7FFFH 1A0000H-1AFFFFH BA25 1 1 0 0 1 X X X 32 / 64 C8000H-CFFFFH 190000H-19FFFFH BA24 1 1 0 0 0 X X X 32 / 64 C0000H-C7FFFH 180000H-18FFFFH BA23 1 0 1 1 1 X X X 32 / 64 B8000H-BFFFFH 170000H-17FFFFH BA22 1 0 1 1 0 X X X 32 / 64 B0000H-B7FFFH 160000H-16FFFFH BA21 1 0 1 0 1 X X X 32 / 64 A8000H-AFFFFH 150000H-15FFFFH BA20 1 0 1 0 0 X X X 32 / 64 A0000H-A7FFFH 140000H-14FFFFH BA19 1 0 0 1 1 X X X 32 / 64 98000H-9FFFFH 130000H-13FFFFH 120000H-12FFFFH BA18 1 0 0 1 0 X X X 32 / 64 90000H-97FFFH BA17 1 0 0 0 1 X X X 32 / 64 88000H-8FFFFH 110000H-11FFFFH BA16 1 0 0 0 0 X X X 32 / 64 80000H-87FFFH 100000H-10FFFFH BA15 0 1 1 1 1 X X X 32 / 64 78000H-7FFFFH 0F0000H-0FFFFFH BA14 0 1 1 1 0 X X X 32 / 64 70000H-77FFFH 0E0000H-0EFFFFH BA13 0 1 1 0 1 X X X 32 / 64 68000H-6FFFFH 0D0000H-0DFFFFH BA12 0 1 1 0 0 X X X 32 / 64 60000H-67FFFH 0C0000H-0CFFFFH BA11 0 1 0 1 1 X X X 32 / 64 58000H-5FFFFH 0B0000H-0BFFFFH BA10 0 1 0 1 0 X X X 32 / 64 50000H-57FFFH 0A0000H-0AFFFFH BA9 0 1 0 0 1 X X X 32 / 64 48000H-4FFFFH 090000H-09FFFFH 080000H-08FFFFH BA8 0 1 0 0 0 X X X 32 / 64 40000H-47FFFH BA7 0 0 1 1 1 X X X 32 / 64 38000H-3FFFFH 070000H-07FFFFH BA6 0 0 1 1 0 X X X 32 / 64 30000H-37FFFH 060000H-06FFFFH BA5 0 0 1 0 1 X X X 32 / 64 28000H-2FFFFH 050000H-05FFFFH BA4 0 0 1 0 0 X X X 32 / 64 20000H-27FFFH 040000H-04FFFFH BA3 0 0 0 1 1 X X X 32 / 64 18000H-1FFFFH 030000H-03FFFFH 020000H-02FFFFH BA2 0 0 0 1 0 X X X 32 / 64 10000H-17FFFH BA1 0 0 0 0 1 X X X 32 / 64 08000H-0FFFFH 010000H-01FFFFH BA0 0 0 0 0 0 X X X 32 / 64 00000H-07FFFH 000000H-00FFFFH Table 4. Secode Block Addresses for Top Boot Devices Device Block Address A19-A12 Block Size (X8) Address Range (X16) Address Range K8D1716UT 11111xxx 64/32 1F0000H-1FFFFFH F8000H-FFFFFH 5 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Table 5. Bottom Boot Block Address (K8D1716UB) K8D1716UT Bank2 Bank1 Address Range Block A19 A18 A17 A16 A15 A14 A13 A12 Block Size (KW/KB) Word Mode Byte Mode BA38 1 1 1 1 1 X X X 32 / 64 F8000H-FFFFFH 1F0000H-1FFFFFH BA37 1 1 1 1 0 X X X 32 / 64 F0000H-F7FFFH 1E0000H-1EFFFFH BA36 1 1 1 0 1 X X X 32 / 64 E8000H-EFFFFH 1D0000H-1DFFFFH BA35 1 1 1 0 0 X X X 32 / 64 E0000H-E7FFFH 1C0000H-1CFFFFH BA34 1 1 0 1 1 X X X 32 / 64 D8000H-DFFFFH 1B0000H-1BFFFFH BA33 1 1 0 1 0 X X X 32 / 64 D0000H-D7FFFH 1A0000H-1AFFFFH BA32 1 1 0 0 1 X X X 32 / 64 C8000H-CFFFFH 190000H-19FFFFH BA31 1 1 0 0 0 X X X 32 / 64 C0000H-C7FFFH 180000H-18FFFFH BA30 1 0 1 1 1 X X X 32 / 64 B8000H-BFFFFH 170000H-17FFFFH BA29 1 0 1 1 0 X X X 32 / 64 B0000H-B7FFFH 160000H-16FFFFH BA28 1 0 1 0 1 X X X 32 / 64 A8000H-AFFFFH 150000H-15FFFFH BA27 1 0 1 0 0 X X X 32 / 64 A0000H-A7FFFH 140000H-14FFFFH BA26 1 0 0 1 1 X X X 32 / 64 98000H-9FFFFH 130000H-13FFFFH BA25 1 0 0 1 0 X X X 32 / 64 90000H-97FFFH 120000H-12FFFFH BA24 1 0 0 0 1 X X X 32 / 64 88000H-8FFFFH 110000H-11FFFFH BA23 1 0 0 0 0 X X X 32 / 64 80000H-87FFFH 100000H-10FFFFH BA22 0 1 1 1 1 X X X 32 / 64 78000H-7FFFFH 0F0000H-0FFFFFH BA21 0 1 1 1 0 X X X 32 / 64 70000H-77FFFH 0E0000H-0EFFFFH BA20 0 1 1 0 1 X X X 32 / 64 68000H-6FFFFH 0D0000H-0DFFFFH BA19 0 1 1 0 0 X X X 32 / 64 60000H-67FFFH 0C0000H-0CFFFFH BA18 0 1 0 1 1 X X X 32 / 64 58000H-5FFFFH 0B0000H-0BFFFFH BA17 0 1 0 1 0 X X X 32 / 64 50000H-57FFFH 0A0000H-0AFFFFH BA16 0 1 0 0 1 X X X 32 / 64 48000H-4FFFFH 090000H-09FFFFH BA15 0 1 0 0 0 X X X 32 / 64 40000H-47FFFH 080000H-08FFFFH BA14 0 0 1 1 1 X X X 32 / 64 38000H-3FFFFH 070000H-07FFFFH BA13 0 0 1 1 0 X X X 32 / 64 30000H-37FFFH 060000H-06FFFFH BA12 0 0 1 0 1 X X X 32 / 64 28000H-2FFFFH 050000H-05FFFFH BA11 0 0 1 0 0 X X X 32 / 64 20000H-27FFFH 040000H-04FFFFH BA10 0 0 0 1 1 X X X 32 / 64 18000H-1FFFFH 030000H-03FFFFH BA9 0 0 0 1 0 X X X 32 / 64 10000H-17FFFH 020000H-02FFFFH BA8 0 0 0 0 1 X X X 32 / 64 08000H-0FFFFH 010000H-01FFFFH BA7 0 0 0 0 0 1 1 1 4/8 07000H-07FFFH 00E000H-00FFFFH BA6 0 0 0 0 0 1 1 0 4/8 06000H-06FFFH 00C000H-00DFFFH BA5 0 0 0 0 0 1 0 1 4/8 05000H-05FFFH 00A000H-00BFFFH BA4 0 0 0 0 0 1 0 0 4/8 04000H-04FFFH 008000H-009FFFH BA3 0 0 0 0 0 0 1 1 4/8 03000H-03FFFH 006000H-007FFFH BA2 0 0 0 0 0 0 1 0 4/8 02000H-02FFFH 004000H-005FFFH BA1 0 0 0 0 0 0 0 1 4/8 01000H-01FFFH 002000H-003FFFH BA0 0 0 0 0 0 0 0 0 4/8 00000H-00FFFH 000000H-001FFFH Table 6. Secode Block Addresses for Bottom Boot Devices Device Block Address A19-A12 Block Size (X8) Address Range (X16) Address Range K8D1716UB 00000xxx 64/32 000000H-00FFFFH 00000H-07FFFH 6 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY PRODUCT INTRODUCTION The K8D1716U is a 16Mbit (16,777,216 bits) NOR-type Flash memory. The device features single voltage power supply operating within the range of 2.7V to 3.6V. The device is programmed by using the Channel Hot Electron (CHE) injection mechanism which is used to program EPROMs. The device is erased electrically by using Fowler-Nordheim tunneling mechanism. To provide highly flexible erase and program capability, the device adapts a block memory architecture that divides its memory array into 39 blocks (64Kbyte x 31 , 8-Kbyte x 8). Programming is done in units of 8 bits (Byte) or 16 bits (Word). All bits of data in one or multiple blocks can be erased simultaneously when the device executes the erase operation. To prevent the device from accidental erasing or over-writing the programmed data, 39 memory blocks can be hardware protected by the block group. Byte/Word modes are available for read operation. These modes can be selected via BYTE pin. The device provides read access times of 70ns, 80ns and 90ns supporting high speed microprocessors to operate without any wait states. The command set of K8D1716U is fully compatible with standard Flash devices. The device is controlled by chip enable (CE), output enable (OE) and write enable (WE). Device operations are executed by selective command codes. The command codes to be combined wih addresses and data are sequentially written to the command registers using microprocessor write timing. The command codes serve as inputs to an internal state machine which controls the program/erase circuitry. Register contents also internally latch addresses and data necessary to execute the program and erase operations. The K8D1716U is implemented with Internal Program/ Erase Algorithms to execute the program/erase operations. The Internal Program/Erase Algorithms are invoked by program/erase command sequences. The Internal Program Algorithm automatically programs and verifies data at specified addresses. The Internal Erase Algorithm automatically pre-programs the memory cell which is not programmed and then executes the erase operation. The K8D1716U has means to indicate the status of completion of program/erase operations. The status can be indicated via the RY/BY pin, Data polling of DQ7, or the Toggle bit (DQ6). Once the operations have been completed, the device automatically resets itself to the read mode. The device requires only 14 mA as active read current and 15 mA for program/erase operations. Table 7. Operations Table Operation word CE OE WE BYTE L L H H Read WP/ ACC A9 A6 A1 A0 DQ15/ A-1 DQ8/ DQ14 DQ0/ DQ7 RESET A9 A6 A1 A0 DQ15 DOUT DOUT H A9 A6 A1 A0 A-1 High-Z DOUT H L/H byte L L H L Vcc ± 0.3V X X X (2) X X X X High-Z High-Z High-Z (2) Output Disable L H H X L/H X X X X High-Z High-Z High-Z H Reset X X X X L/H X X X X High-Z High-Z High-Z L word L H L H byte L H L L Enable Block Group Protect (3) L H L X Enable Block Group Unprotect (3) L H L Temporary Block Group X X Auto Select Manufacturer ID (5) L Auto Select Device Code (5) L Stand-by A9 A6 A1 A0 DIN DIN DIN H A9 A6 A1 A0 A-1 High-Z DIN H L/H X L H L X X DIN VID X (4) X H H L X X DIN VID X X (4) X X X X X X X VID L H X L/H VID L L L X X L H X L/H VID L L H X X Write (4) Code(See Table 9) Code(See Table 9) H H Notes : 1. L = VIL (Low), H = VIH (High), VID = 8.5V~12.5V, DIN = Data in, DOUT = Data out, X = Don't care. 2. WP/ACC and RESET pin are asserted at Vcc±0.3 V or Vss±0.3 V in the Stand-by mode. 3. Addresses must be composed of the Block address (A12 - A19). The Block Protect and Unprotect operations may be implemented via programming equipment too. Refer to the "Block Group Protection and Unprotection". 4. If WP/ACC=VIL, the two outermost boot blocks is protected. If WP/ACC=VIH, the two outermost boot block protection depends on whether those blocks were last protected or unprotected using the method described in "Block Group Protection and Unprotection". If WP/ACC=VHH, all blocks will be temporarily unprotected. 5. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 9. 7 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY COMMAND DEFINITIONS The K8D1716U operates by selecting and executing its operational modes. Each operational mode has its own command set. In order to select a certain mode, a proper command with specific address and data sequences must be written into the command register. Writing incorrect information which include address and data or writing an improper command will reset the device to the read mode. The defined valid register command sequences are stated in Table 8. Note that Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Block Erase Operation is in progress. Table 8. Command Sequences 1st Cycle Command Sequence Word Addr Read Autoselect Block Group Protect Verify (2,3) Auto Select Secode Block Factory Protect Verify (2,3) Enter Secode Block Region Exit Secode Block Region 3rd Cycle 4th Cycle Word Byte Word Byte Word Byte 5th Cycle 6th Cycle 2AAH 555H DA/ 555H DA/ AAAH DA/ X00H DA/ X00H Word Byte Word Byte 2AAH 555H 555H AAAH RA 1 RD Addr XXXH 1 Data Autoselect Device Code (2,3) Byte Data Reset Autoselect Manufacturer ID (2,3) 2nd Cycle Cycle F0H 555H Addr AAAH 4 Data AAH Addr 555H 55H AAAH 2AAH 90H DA/ 555H 555H 4 Data AAH Addr 555H 55H AAAH 2AAH 90H DA/ 555H 555H 4 Data AAH Addr 555H 55H AAAH 2AAH AAH Addr 555H 555H 55H AAAH 2AAH DA/ AAAH 90H DA/ 555H 4 Data DA/ AAAH DA/ AAAH 90H 555H 555H ECH DA/ X01H DA/ X02H (See Table 9) BA / X02H BA/ X04H (See Table 9) DA / X03H DA/ X06H (See Table 9) AAAH 3 Data AAH Addr 555H 55H AAAH 2AAH 88H 555H 555H AAAH XXXH 4 Data AAH Addr Program 555H 55H AAAH 2AAH 90H 555H 555H 00H AAAH PA 4 Data AAH Addr Unlock Bypass 555H 55H AAAH 2AAH A0H 555H 555H PD AAAH 3 Data AAH 55H Unlock Bypass Program Addr XXXH PA A0H PD Unlock Bypass Reset Addr XXXH XXXH 20H 2 Data 2 Data 90H Addr Chip Erase 555H 00H AAAH 2AAH 555H 555H AAAH 555H AAAH 6 Data AAH Addr Block Erase 555H 55H AAAH 2AAH 80H 555H 555H AAAH AAH 555H AAAH 55H 2AAH 10H 555H BA 6 Data AAH 55H 80H AAH 55H 30H XXXH Block Erase Suspend (4, 5) Addr Data B0H Block Erase Resume Addr XXXH 1 1 Data 30H Addr CFI Query (6) 55H AAH 1 Data 98H 8 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB Notes : FLASH MEMORY 1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data DA : Dual Bank Address, BA : Block Address (A12 - A19), X = Don’t care . 2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register. 3. The 4th cycle data of Autoselect mode is output data. The 3rd and 4th cycle bank addresses of Autoselect mode must be same. 4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode. 5. The Erase Suspend command is applicable only to the Block Erase operation. 6. Command is valid when the device is in read mode or Autoselect mode. 7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded. 8. A11 - A19 are also don’t care, except for the case of special notice. Table 9. K8D1716U Autoselect Codes, (High Voltage Method) DQ8 to DQ15 CE OE WE A19 to A12 A11 to A10 A9 A8 to A7 A6 A5 to A2 A1 A0 Manufacturer ID L L H DA X VID X L X L Device Code K8D1716UT (Top Boot Block) L L H DA X VID X L X Device Code K8D1716UB (Bottom Boot Block) L L H DA X VID X L Block Protection Verification L L H BA X VID X Secode Block (2) Indicator Bit (DQ7) L L H DA X VID X Description Notes : DQ7 to DQ0 BYTE =VIH BYTE =VIL L X X ECH L H 22H X A0H X L H 22H X A2H L X H L X X 01H (Protected), 00H (Unprotected) L X H H X X 80H (Factory locked), 00H (Not factory locked) 1. L=Logic Low=VIL, H=Logic High=VIH, DA=Dual Bank Address, BA=Block Address, X=Don’t care. 2. Secode Block : Security Code Block. 9 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY DEVICE OPERATION Byte/Word Mode If the BYTE pin is set at logical "1" , the device is in word mode, DQ0-DQ15 are active. Otherwise the BYTE pin is set at logical "0" , the device is in byte mode, DQ0-DQ7 are active. DQ8-DQ14 are in the High-Z state and DQ15 pin is used as an input for the LSB (A-1) address pin. Read Mode The K8D1716U is controlled by Chip Enable (CE), Output Enable (OE) and Write Enable (WE). When CE and OE are low and WE is high, the data stored at the specified address location,will be the output of the device. The outputs are in high impedance state whenever CE or OE is high. Standby Mode The K8D1716U features Stand-by Mode to reduce power consumption. This mode puts the device on hold when the device is deselected by making CE high (CE = VIH). Refer to the DC characteristics for more details on stand-by modes. Output Disable The device outputs are disabled when OE is High (OE = VIH). The output pins are in high impedance state. Automatic Sleep Mode K8D1716U features Automatic Sleep Mode to minimize the device power consumption. Since the device typically draws 5µA of the current in Automatic Sleep Mode, this feature plays an extremely important role in battery-powered applications. When addresses remain steady for tAA+50ns, the device automatically activates the Automatic Sleep Mode. In the sleep mode, output data is latched and always available to the system. When addresses are changed, the device provides new data without wait time. tAA + 50ns Address Outputs Data Data Data Data Data Data Auto Sleep Mode Figure 1. Auto Sleep Mode Operation Autoselect Mode The K8D1716U offers the Autoselect Mode to identify manufacturer and device type by reading a binary code. The Autoselect Mode allows programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. In addition, this mode allows the verification of the status of write protected blocks. This mode is used by two method. The one is high voltage method to be required VID (8.5V~12.5V) on address pin A9. When A9 is held at VID and the bank address or block address is asserted, the device outputs the valid data via DQ pins(see Table 9 and Figure 2). The rest of addresses except A0, A1 and A6 are Don′t Care. The other is autoselect command method that the autoselect code is accessible by the commamd sequence without VID. The manufacturer and device code may also be read via the command register. The Command Sequence is shown in Table 8 and Figure 3. The autoselect operation of block protect verification is initiated by first writing two unlock cycle. The third cycle must contain the bank address and autoselect command (90H). If Block address while (A6, A1, A0) = (0,1,0) is finally asserted on the address pin, it will produce a logical "1" at the device output DQ0 to indicate a write protected block or a logical "0" at the device output DQ0 to indicate a write unprotected block. To terminate the autoselect operation, write Reset command (F0H) into the command register. 10 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY VID V = VIH or VIL A9 A6,A1,A0* 01H 00H 22A0H or 22A2H ECH DQ15-DQ0 Manufacturer Code Device Code (K8D1716U) Return to Read Mode Note : The addresses other than A0 , A1 and A6 are Don′t care. Please refer to Table 9 for device code. Figure 2. Autoselect Operation ( by high voltage method ) WE A19∼A0(x16)/* A19∼A-1(x8) DQ15∼DQ0 2AAH/ 555H 555H/ AAAH 01H/ 02H 22A0H or 22A2H ECH 90H 55H AAH 00H/ 00H 555H/ AAAH Manufacturer Code F0H Device Code (K8D1716U) Return to Read Mode Note : The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 9 for device code. Figure 3. Autoselect Operation ( by command sequence method ) Write (Program/Erase) Mode The K8D1716U executes its program/erase operations by writing commands into the command register. In order to write the commands to the register, CE and WE must be low and OE must be high. Addresses are latched on the falling edge of CE or WE (whichever occurs last) and the data are latched on the rising edge of CE or WE (whichever occurs first). The device uses standard microprocessor write timing. Program The K8D1716U can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the memory location and the data to be programmed at that location are written. The device automatically generates adequate program pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is not required to provide further controls or timings. During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program operation will cause data corruption at the corresponding location. WE A19∼A0(x16)/ A19∼A-1(x8) DQ15-DQ0 555H/ AAAH 2AAH/ 555H 555H/ AAAH AAH 55H Program Address A0H Program Data Program Start RY/BY Figure 4. Program Command Sequence 11 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Unlock Bypass The K8D1716U provides the unlock bypass mode to save its program time for program operation. The mode is invoked by the unlock bypass command sequence. Then, the unlock bypass program command sequence is required to program the device. Unlike the standard program command sequence that contains four bus cycles, the unlock bypass program command sequence comprises only two bus cycles. The unlock bypass mode is engaged by issuing the unlock bypass command sequence which is comprised of three bus cycles. Writing first two unlock cycles is followed by a third cycle containing the unlock bypass command (20H). Once the device is in the unlock bypass mode, the unlock bypass program command sequence is necessary to program in this mode. The unlock bypass program command sequence is comprised of only two bus cycles; writing the unlock bypass program command (A0H) is followed by the program address and data. This command sequence is the only valid one for programming the device in the unlock bypass mode. The unlock bypass reset command sequence is the only valid command sequence to exit the unlock bypass mode. The unlock bypass reset command sequence consists of two bus cycles. The first cycle must contain the data (90H). The second cycle contains only the data (00H). Then, the device returns to the read mode. Chip Erase To erase a chip is to write 1′s into the entire memory array by executing the Internal Erase Routine. The Chip Erase requires six bus cycles to write the command sequence. The erase set-up command is written after first two "unlock" cycles. Then, there are two more write cycles prior to writing the chip erase command. The Internal Erase Routine automatically pre-programs and verifies the entire memory for an all zero data pattern prior to erasing. The automatic erase begins on the rising edge of the last WE or CE pulse in the command sequence and terminates when DQ7 is "1". After that the device returns to the read mode. WE A19∼A0(x16)/ A19∼A-1(x8) DQ15-DQ0 555H/ AAAH 2AAH/ 555H AAH 555H/ AAAH 55H 555H AAAH 80H 2AAH/ 555H AAH 555H/ AAAH 55H 10H Chip Erase Start RY/BY Figure 5. Chip Erase Command Sequence Block Erase To erase a block is to write 1′s into the desired memory block by executing the Internal Erase Routine. The Block Erase requires six bus cycles to write the command sequence shown in Table 8. After the first two "unlock" cycles, the erase setup command (80H) is written at the third cycle. Then there are two more "unlock" cycles followed by the Block Erase command. The Internal Erase Routine automatically pre-programs and verifies the entire memory prior to erasing it. The block address is latched on the falling edge of WE or CE, while the Block Erase command is latched on the rising edge of WE or CE. Multiple blocks can be erased sequentially by writing the six bus-cycle operation in Figure 6. Upon completion of the last cycle for the Block Erase, additional block address and the Block Erase command (30H) can be written to perform the Multi-Block Erase. An 50µs (typical) "time window" is required between the Block Erase command writes. The Block Erase command must be written within the 50µs "time window", otherwise the Block Erase command will be ignored. The 50µs "time window" is reset when the falling edge of the WE occurs within the 50µs of "time window" to latch the Block Erase command. During the 50µs of "time window", any command other than the Block Erase or the Erase Suspend command written to the device will reset the device to read mode. After the 50µs of "time window", the Block Erase command will initiate the Internal Erase Routine to erase the selected blocks. Any Block Erase address and command following the exceeded "time window" may or may not be accepted. No other commands will be recognized except the Erase Suspend command during Block Erase operation. 12 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY WE A19∼A0(x16)/ A19∼A-1(x8) 555H/ AAAH DQ15-DQ0 2AAH/ 555H AAH 555H/ AAAH 555H/ AAAH 80H 55H 2AAH/ 555H AAH Block Address 55H 30H Block Erase Start RY/BY Figure 6. Block Erase Command Sequence Erase Suspend / Resume The Erase Suspend command interrupts the Block Erase to read or program data in a block that is not being erased. The Erase Suspend command is only valid during the Block Erase operation including the time window of 50µs. The Erase Suspend command is not valid while the Chip Erase or the Internal Program Routine sequence is running. When the Erase Suspend command is written during a Block Erase operation, the device requires a maximum of 20µs to suspend the erase operation. But, when the Erase Suspend command is written during the block erase time window (50µs) , the device immediately terminates the block erase time window and suspends the erase operation. After the erase operation has been suspended, the device is availble for reading or programming data in a block that is not being erased. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. When the Erase Resume command is executed, the Block Erase operation will resume. When the Erase Suspend or Erase Resume command is executed, the addresses are in Don't Care state. WE A19∼A0(x16)/ A19∼A-1(x8) DQ15-DQ0 555H/ AAAH Block Address AAH Block Erase Command Sequence XXXH 30H XXXH B0H Block Erase Start Erase Suspend 30H Erase Resume Figure 7. Erase Suspend/Resume Command Sequence 13 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Read While Write The K8D1716U provides dual bank memory architecture that divides the memory array into two banks. The device is capable of reading data from one bank and writing data to the other bank simultaneously. This is so called the Read While Write operation with dual bank architecture; this feature provides the capability of executing the read operation during Program/Erase or Erase-SuspendProgram operation. The Read While Write operation is prohibited during the chip erase operation. It is also allowed during erase operation when either single block or multiple blocks from same bank are loaded to be erased. It means that the Read While Write operation is prohibited when blocks from Bank1 and another blocks from Bank2 are loaded all together for the multi-block erase operation. Block Group Protection & Unprotection The K8D1716U feature hardware block group protection. This feature will disable both program and erase operations in any combination of twenty five block groups of memory. Please refer to Tables 10 and 11. The block group protection feature is enabled using programming equipment at the user’s site. The device is shipped with all block groups unprotected. This feature can be hardware protected or unprotected. If a block is protected, program or erase command in the protected block will be ignored by the device. The protected block can only be read. This is useful method to preserve an important program data. The block group unprotection allows the protected blocks to be erased or programed. All blocks must be protected before unprotect operation is executing. The block group protection and unprotection can be implemented by two methods. The first method needs the following conditions. Operation CE OE WE BYTE A9 A6 A1 DQ15/ A-1 A0 DQ8/ DQ14 DQ0/ DQ7 RESET Block Group Protect L H L X X L H L X X DIN VID Block Group Unprotect L H L X X H H L X X DIN VID Address must be inputted to the block group address (A12~A19) during block group protection operation. Please refer to Figure 9 (Algorithm) and Switching Waveforms of Block Group Protect & Unprotect Operations. The second method needs the following conditions in order to keep backward compatibility. Please refer to Figure 8. Operation BYTE A9 A6 A1 A0 DQ15/ A-1 DQ8/ DQ14 DQ0/ DQ7 RESET VID X VID L H L X X X H VID X VID H H L X X X H CE OE Block Group Protect L Block Group Unprotect L WE The K8D1716U needs the recovery time (20µs) from the rising edge of WE in order to execute its program, erase and read operations. 500ns Block Group Protect:150µs Block Group Unprotect:500ms 500ns VID A9 Don't Care VID Don't Care OE WE Address Low Block Group Address* Notes : * Block Group Address is Don't Care during Block Group Unprotection. Figure 8. Block Group Protect Sequence (The second method) 14 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY START COUNT = 1 RESET=VID Wait 1µs First Write Cycle=60h? No Temporary Block Group Unprotect Mode Yes Yes Block Group Protection ? No Block Protect Algorithm No Set up Block Group address All Block Groups Protected ? Block Unprotect Algorithm Yes Block Group <i>, i= 0 Block Group Unprotect Write 60H with A6=1,A1=1 A0=0 Block Group Protect: Write 60H to Block Group address with A6=0,A1=1 A0=0 Wait 15ms Wait 150µs Reset COUNT=1 Verify Block Group Protect:Write 40H to Block Group address with A6=0, A1=1,A0=0 Increment COUNT Increment COUNT Read from Block Group address with A6=1, A1=1,A0=0 Read from Block Group address with A6=0, A1=1,A0=0 No COUNT =1000? Data=01h? No Data=00h? Yes Yes Yes Yes Device failed Protect another Block Group? Set up next Block Group address No No COUNT =25? Verify Block Group Unprotect:Write 40H to Block Group address with A6=1, A1=1,A0=0 Device failed Last Block Group verified ? No Yes Yes Remove VID from RESET No Remove VID from RESET Write RESET command Write RESET command END END Note : All blocks must be protected before unprotect operation is executing. Figure 9. Block Group Protection & Unprotection Algorithms 15 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Table 10. Block Group Address (Top Boot Block) Block Address Block Group Block A19 A18 A17 A16 A15 A14 A13 A12 BGA0 0 0 0 0 0 X X X BA0 0 1 BGA1 0 0 0 1 0 X X X BA1 to BA3 1 1 X X X X X BA4 to BA7 BGA2 0 0 1 BGA3 0 1 0 X X X X X BA8 to BA11 BGA4 0 1 1 X X X X X BA12 to BA15 BGA5 1 0 0 X X X X X BA16 to BA19 BGA6 1 0 1 X X X X X BA20 to BA23 BGA7 1 1 0 X X X X X BA24 to BA27 1 1 1 0 0 X X X 1 1 1 0 1 X X X 1 1 1 1 0 X X X BGA9 1 1 1 1 1 0 0 0 BGA10 1 1 1 1 1 0 0 1 BA32 BGA11 1 1 1 1 1 0 1 0 BA33 BGA12 1 1 1 1 1 0 1 1 BA34 BGA13 1 1 1 1 1 1 0 0 BA35 BGA14 1 1 1 1 1 1 0 1 BA36 BGA15 1 1 1 1 1 1 1 0 BA37 BGA16 1 1 1 1 1 1 1 1 BA38 BGA8 16 BA28 to BA30 BA31 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Table 11. Block Group Address (Bottom Boot Block) Block Address Block Group Block A19 A18 A17 A16 A15 A14 A13 A12 BGA0 0 0 0 0 0 0 0 0 BA0 BGA1 0 0 0 0 0 0 0 1 BA1 BGA2 0 0 0 0 0 0 1 0 BA2 BGA3 0 0 0 0 0 0 1 1 BA3 BGA4 0 0 0 0 0 1 0 0 BA4 BGA5 0 0 0 0 0 1 0 1 BA5 BGA6 0 0 0 0 0 1 1 0 BA6 BGA7 0 0 0 0 0 1 1 1 BA7 1 1 0 X X X BA8 to BA10 BGA8 0 0 0 1 0 1 BGA9 0 0 1 X X X X X BA11 to BA14 BGA10 0 1 0 X X X X X BA15 to BA18 BGA11 0 1 1 X X X X X BA19 to BA22 BGA12 1 0 0 X X X X X BA23 to BA26 BGA13 1 0 1 X X X X X BA27 to BA30 BGA14 1 1 0 X X X X X BA31 to BA34 0 0 0 1 X X X BA35 to BA37 1 0 1 1 X X X BA38 BGA15 BGA16 1 1 1 1 1 1 17 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Temporary Block Group Unprotect The protected blocks of the K8D1716U can be temporarily unprotected by applying high voltage (VID = 8.5V~12.5V) to the RESET pin. In this mode, previously protected blocks can be programmed or erased with the program or erase command routines. When the RESET pin goes high (RESET = VIH), all the previously protected blocks will be protected again. If the WP/ACC pin is asserted at VIL , the two outermost boot blocks remain protected. VID V = VIH or VIL RESET CE Program & Erase Operation at Protected Block WE Figure 10. Temporary Block Group Unprotect Sequence Write Protect (WP) The WP/ACC pin has two useful functions. The one is that certain boot block is protected by the hardware method not to use VID. The other is that program operation is accelerated to reduce the program time (Refer to Accelerated program Operation Paragraph). When the WP/ACC pin is asserted at VIL, the device can not perform program and erase operation in the two "outermost" 8K byte boot blocks independently of whether those blocks were protected or unprotected using the method described in "Block Group protection/Unprotection". The write protected blocks can only be read. This is useful method to preserve an important program data. The two outermost 8K byte boot blocks are the two blocks containing the lowest addresses in a bottom-boot-configured device, or the two blocks containing the highest addresses in a top-boot-congfigured device. (K8D1716UT : BA37 and BA38, K8D1716UB : BA0 and BA1) When the WP/ACC pin is asserted at VIH, the device reverts to whether the two outermost 8K byte boot blocks were last set to be protected or unprotected. That is, block protection or unprotection for these two blocks depends on whether they were last protected or unprotected using the method described in "Block Group protection/unprotection". Recommend that the WP/ACC pin must not be in the state of floating or unconnected, or the device may be led to malfunction. Secode(Security Code) Block Region The Secode Block feature provides a Flash memory region to be stored unique and permanent identification code, that is, Electronic Serial Number (ESN), customer code and so on. This is primarily intended for customers who wish to use an Electronic Serial Number (ESN) in the device with the ESN protected against modification. Once the Secode Block region is protected, any further modification of that region is impossible. This ensures the security of the ESN once the product is shipped to the field. The Secode Block is factory locked or customer lockable. Before the device is shipped, the factory locked Secode Block is written on the special code and it is protected. The Secode Indicator bit (DQ7) is permanently fixed at "1" and it is not changed. The customer lockable Secode Block is unprotected, therefore it is programmed and erased. The Secode Indicator bit (DQ7) of it is permanently fixed at "0" and it is not changed. But once it is protected, there is no procedure to unprotect and modify the Secode Block. The Secode Block region is 64K bytes in length and is accessed through a new command sequence (see Table 8). After the system has written the Enter Secode Block command sequence, the system may read the Secode Block region by using the same addresses of the boot blocks (8KBx8). The K8D1716UT occupies the address of the byte mode 3F0000H to 3FFFFFH (word mode 1F8000H to 1FFFFFH) and the K8D1716UB type occupies the address of the byte mode 000000H to 00FFFFH (word mode 000000H to 007FFFH). This mode of operation continues until the system issues the Exit Secode Block command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to read mode. 18 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Accelerated Program Operation Accelerated program operation reduces the program time. This is one of two functions provided by the WP/ACC pin. When the WP/ ACC pin is asserted as VHH, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotecting any protected blocks, and reduces the program operation time. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP/ACC pin returns the device to normal operation. Recommend that the WP/ACC pin must not be asserted at VHH except accelerated program operation, or the device may be damaged. In addition, the WP/ACC pin must not be in the state of floating or unconnected, otherwise the device may be led to malfunction. Software Reset The reset command provides that the bank is reseted to read mode or erase-suspend-read mode. The addresses are in Don't Care state. The reset command is vaild between the sequence cycles in an erase command sequence before erasing begins, or in a program command sequence before programming begins. This resets the bank in which was operating to read mode. if the device is be erasing or programming, the reset command is invalid until the operation is completed. Also, the reset command is valid between the sequence cycles in an autoselect command sequence. In the autoselect mode, the reset command returns the bank to read mode. If a bank entered the autoselect mode in the Erase Suspend mode, the reset command returns the bank to erase-suspend-read mode. If DQ5 is high on erase or program operation, the reset command return the bank to read mode or erase-suspend-read mode if the bank was in the Erase Suspend state. Hardware Reset The K8D1716U offers a reset feature by driving the RESET pin to VIL. The RESET pin must be kept low (VIL) for at least 500ns. When the RESET pin is driven low, any operation in progress will be terminated and the internal state machine will be reset to the standby mode after 20µs. If a hardware reset occurs during a program operation, the data at that particular location will be lost. Once the RESET pin is taken high, the device requires 200ns of wake-up time until outputs are valid for read access. Also, note that all the data output pins are tri-stated for the duration of the RESET pulse. The RESET pin may be tied to the system reset pin. If a system reset occurs during the Internal Program and Erase Routine, the device will be automatically reset to the read mode ; this will enable the systems microprocessor to read the boot-up firmware from the Flash memory. Power-up Protection To avoid initiation of a write cycle during Vcc Power-up, RESET low must be asserted during power-up. After RESET goes high, the device is reset to the read mode. Low Vcc Write Inhibit To avoid initiation of a write cycle during Vcc power-up and power-down, a write cycle is locked out for Vcc less than 1.8V. If Vcc < VLKO (Lock-Out Voltage), the command register and all internal program/erase circuits are disabled. Under this condition the device will reset itself to the read mode. Subsequent writes will be ignored until the Vcc level is greater than VLKO. It is the user′s responsibility to ensure that the control pins are logically correct to prevent unintentional writes when Vcc is above 1.8V. Write Pulse Glitch Protection Noise pulses of less than 5ns(typical) on CE, OE, or WE will not initiate a write cycle. Logical Inhibit Writing is inhibited under any one of the following conditions : OE = VIL, CE = VIH or WE = VIH. To initiate a write, CE and WE must be "0", while OE is "1". Commom Flash Memory Interface Common Flash Momory Interface is contrived to increase the compatibility of host system software. It provides the specific information of the device, such as memory size, byte/word configuration, and electrical features. Once this information has been obtained, the system software will know which command sets to use to enable flash writes, block erases, and control the flash component. When the system writes the CFI command(98H) to address 55H in word mode(or address AAH in byte mode), the device enters the CFI mode. And then if the system writes the address shown in Table 12, the system can read the CFI data. Query data are always presented on the lowest-order data outputs(DQ0-7) only. In word(x16) mode, the upper data outputs(DQ8-15) is 00h. To terminate this operation, the system must write the reset command. 19 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Table 12. Common Flash Memory Interface Code Addresses (Word Mode) Addresses (Byte Mode) Data Query Unique ASCII string "QRY" 10H 11H 12H 20H 22H 24H 0051H 0052H 0059H Primary OEM Command Set 13H 14H 26H 28H 0002H 0000H Address for Primary Extended Table 15H 16H 2AH 2CH 0040H 0000H Alternate OEM Command Set (00h = none exists) 17H 18H 2EH 30H 0000H 0000H Address for Alternate OEM Extended Table (00h = none exists) 19H 1AH 32H 34H 0000H 0000H Vcc Min. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1BH 36H 0027H Vcc Max. (write/erase) D7-D4: volt, D3-D0: 100 millivolt 1CH 38H 0036H Vpp Min. voltage(00H = no Vpp pin present) 1DH 3AH 0000H Vpp Max. voltage(00H = no Vpp pin present) 1EH 3CH 0000H Typical timeout per single byte/word write 2 us 1FH 3EH 0004H Typical timeout for Min. size buffer write 2N us(00H = not supported) 20H 40H 0000H Description N Typical timeout per individual block erase 2N ms 21H 42H 000AH Typical timeout for full chip erase 2N ms(00H = not supported) 22H 44H 0000H 23H 46H 0005H 24H 48H 0000H 25H 4AH 0004H Max. timeout for full chip erase 2 times typical(00H = not supported) 26H 4CH 0000H Device Size = 2N byte 27H 4EH 0015H Flash Device Interface description 28H 29H 50H 52H 0002H 0000H Max. number of byte in multi-byte write = 2N 2AH 2BH 54H 56H 0000H 0000H Number of Erase Block Regions within device 2CH 58H 0002H Erase Block Region 1 Information 2DH 2EH 2FH 30H 5AH 5CH 5EH 60H 0007H 0000H 0020H 0000H Erase Block Region 2 Information 31H 32H 33H 34H 62H 64H 66H 68H 0007H 0000H 0020H 0000H Erase Block Region 3 Information 35H 36H 37H 38H 6AH 6CH 6EH 70H 0000H 0000H 0000H 0000H Erase Block Region 4 Information 39H 3AH 3BH 3CH 72H 74H 76H 78H 0000H 0000H 0000H 0000H N Max. timeout for byte/word write 2 times typical N Max. timeout for buffer write 2 times typical N Max. timeout per individual block erase 2 times typical N 20 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Table 12. Common Flash Memory Interface Code Addresses (Word Mode) Addresses (Byte Mode) Data Query-unique ASCII string "PRI" 40H 41H 42H 80H 82H 84H 0050H 0052H 0049H Major version number, ASCII 43H 86H 0031H Minor version number, ASCII 44H 88H 0032H Address Sensitive Unlock(Bits 1-0) 0 = Required, 1= Not Required Silcon Revision Number(Bits 7-2) 45H 8AH 0000H Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 46H 8CH 0002H Block Protect 0 = Not Supported, 1 = Number of blocks in per group 47H 8EH 0001H Block Temporary Unprotect 00 = Not Supported, 01 = Supported 48H 90H 0001H Block Protect/Unprotect scheme 04=K8D1x16U mode 49H 92H 0004H Simultaneous Operation (1) 00 = Not Supported, XX = Number of Blocks in Bank2 4AH 94H 00XXH Burst Mode Type 00 = Not Supported, 01 = Supported 4BH 96H 0000H Page Mode Type 00 = Not Supported, 01 = 4 Word Page 02 = 8 Word Page 4CH 98H 0000H ACC(Acceleration) Supply Minimum 00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV 4DH 9AH 0085H ACC(Acceleration) Supply Maximum 00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV 4EH 9CH 0095H Top/Bottom Boot Block Flag 02H = Bottom Boot Device, 03H = Top Boot Device 4FH 9EH 000XH Description Note : 1. The number of blocks in Bank2 is device dependent. K8D1716U(8Mb/8Mb) = 10h (16blocks) 21 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY DEVICE STATUS FLAGS The K8D1716U has means to indicate its status of operation in the bank where a program or erase operation is in processes. Address must include bank address being excuted internal routine operation. The status is indicated by raising the device status flag via corresponding DQ pins or the RY/ BY pin. The corresponding DQ pins are DQ7, DQ6, DQ5, DQ3 and DQ2. The statuses are as follows : Table 13. Hardware Sequence Flags Status Programming Block Erase or Chip Erase DQ6 DQ5 DQ3 DQ2 RY/BY DQ7 Toggle 0 0 1 0 0 Toggle 0 1 Toggle 0 1 1 0 0 Toggle (Note 1) 1 Erase Suspend Read Erase Suspended Block Erase Suspend Read Non-Erase Suspended Block Data Data Data Data Data 1 Erase Suspend Program Non-Erase Suspended Block DQ7 Toggle 0 0 1 0 DQ7 Toggle 1 0 No Toggle 0 0 Toggle 1 1 (Note 2) 0 0 No Toggle 0 In Progress Programming Exceeded Time Limits DQ7 Block Erase or Chip Erase Erase Suspend Program DQ7 Toggle 1 Notes : 1. DQ2 will toggle when the device performs successive read operations from the erase suspended block. 2. If DQ5 is High (exceeded timing limits), successive reads from a problem block will cause DQ2 to toggle. DQ7 : Data Polling When an attempt to read the device is made while executing the Internal Program, the complement of the data is written to DQ7 as an indication of the Routine in progress. When the Routine is completed an attempt to access to the device will produce the true data written to DQ7. When a user attempts to read the device during the Erase operation, DQ7 will be low. If the device is placed in the Erase Suspend Mode, the status can be detected via the DQ7 pin. If the system tries to read an address which belongs to a block that is being erased, DQ7 will be high. If a non-erased block address is read, the device will produce the true data to DQ7. If an attempt is made to program a protected block, DQ7 outputs complements the data for approximately 1µs and the device then returns to the Read Mode without changing data in the block. If an attempt is made to erase a protected block, DQ7 outputs complement data in approximately 100us and the device then returns to the Read Mode without erasing the data in the block. DQ6 : Toggle Bit Toggle bit is another option to detect whether an Internal Routine is in progress or completed. Once the device is at a busy state, DQ6 will toggle. Toggling DQ6 will stop after the device completes its Internal Routine. If the device is in the Erase Suspend Mode, an attempt to read an address that belongs to a block that is being erased will produce a high output of DQ6. If an address belongs to a block that is not being erased, toggling is halted and valid data is produced at DQ6. If an attempt is made to program a protected block, DQ6 toggles for approximately 1us and the device then returns to the Read Mode without changing the data in the block. If an attempt is made to erase a protected block, DQ6 toggles for approximately 100µs and the device then returns to the Read Mode without erasing the data in the block. DQ5 : Exceed Timing Limits If the Internal Program/Erase Routine extends beyond the timing limits, DQ5 will go High, indicating program/erase failure. 22 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY DQ3 : Block Erase Timer The status of the multi-block erase operation can be detected via the DQ3 pin. DQ3 will go High if 50µs of the block erase time window expires. In this case, the Internal Erase Routine will initiate the erase operation.Therefore, the device will not accept further write commands until the erase operation is completed. DQ3 is Low if the block erase time window is not expired. Within the block erase time window, an additional block erase command (30H) can be accepted. To confirm that the block erase command has been accepted, the software may check the status of DQ3 following each block erase command. DQ2 : Toggle Bit 2 The device generates a toggling pulse in DQ2 only if an Internal Erase Routine or an Erase Suspend is in progress. When the device executes the Internal Erase Routine, DQ2 toggles only if an erasing block is read. Although the Internal Erase Routine is in the Exceeded Time Limits, DQ2 toggles only if an erasing block in the Exceeded Time Limits is read. When the device is in the Erase Suspend mode, DQ2 toggles only if an address in the erasing block is read. If a non-erasing block address is read during the Erase Suspend mode, then DQ2 will produce valid data. DQ2 will go High if the user tries to program a non-erase suspend block while the device is in the Erase Suspend mode. Combination of the status in DQ6 and DQ2 can be used to distinguish the erase operation from the program operation. RY/BY : Ready/Busy The K8D1716U has a Ready / Busy output that indicates either the completion of an operation or the status of Internal Algorithms. If the output is Low, the device is busy with either a program or an erase operation. If the output is High, the device is ready to accept any read/write or erase operation. When the RY/ BY pin is low, the device will not accept any additional program or erase commands with the exception of the Erase Suspend command. If the K8D1716U is placed in an Erase Suspend mode, the RY/ BY output will be High. For programming, the RY/ BY is valid (RY/ BY = 0) after the rising edge of the fourth WE pulse in the four write pulse sequence. For Chip Erase, RY/ BY is also valid after the rising edge of WE pulse in the six write pulse sequence. For Block Erase, RY/ BY is also valid after the rising edge of the sixth WE pulse. The pin is an open drain output, allowing two or more Ready/ Busy outputs to be OR-tied. An appropriate pull-up resistor is required for proper operation. Rp VccF Rp = VccF (Max.) - VOL (Max.) IOL + Σ IL 3.2V = 2.1mA + Σ IL Ready / Busy open drain output where Σ IL is the sum of the input currents of all devices tied to the Ready / Busy ball. Vss Device 23 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY Start Start DQ7 = Data ? Yes DQ6 = Toggle ? No Yes No No DQ5 = 1 ? DQ5 = 1 ? Yes Yes DQ7 = Data ? No Yes DQ6 = Toggle ? Yes No Fail No Fail Pass Pass Figure 12. Toggle Bit Algorithms Figure 11. Data Polling Algorithms Start RESET=VID (Note 1) Perform Erase or Program Operations RESET=VIH Temporary Block Unprotect Completed (Note 2) Notes : 1. All protected block groups are unprotected. ( If WP/ACC = VIL , the two outermost boot blocks remain protected ) 2. All previously protected block groups are protected once again. Figure 13. Temporary Block Group Unprotect Routine 24 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY ABSOLUTE MAXIMUM RATINGS Parameter Symbol Vcc Voltage on any pin relative to VSS Rating Vcc -0.5 to +4.0 A9, OE , RESET -0.5 to +12.5 VIN WP/ACC V -0.5 to +12.5 All Other Pins Temperature Under Bias Unit -0.5 to +4.0 Commercial -10 to +125 Tbias Industrial °C -40 to +125 Storage Temperature Tstg -65 to +150 °C Short Circuit Output Current IOS 5 mA Operating Temperature TA (Commercial Temp.) 0 to +70 °C TA (Industrial Temp.) -40 to + 85 °C Notes : 1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on input / output pins is Vcc+0.5V which, during transitions, may overshoot to Vcc+2.0V for periods <20ns. 2. Minimum DC voltage is -0.5V on A9, OE, RESET and WP/ACC pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on A9, OE, RESET pins is 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns. 3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS ( Voltage reference to Vss ) Symbol Min Typ. Max Unit Supply Voltage Parameter VCC 2.7 3.0 3.6 V Supply Voltage VSS 0 0 0 V DC CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit − 1.0 - + 1.0 µA Input Leakage Current ILI VIN=VSS to VCC, VCC=VCCmax A9,OE,RESET Input Leakage Current ILIT VCC=VCCmax, A9,OE,RESET=12.5V - - 35 µA WP/ACC Input Leakage Current ILIW VCC=VCCmax, WP/ACC=12.5V - - 35 µA Output Leakage Current ILO VOUT=VSS to VCC,VCC=VCCmax,OE=VIH µA − 1.0 - + 1.0 5MHz - 14 20 1MHz - 3 6 Active Read Current (1) ICC1 CE=VIL, OE=VIH Active Write Current (2) ICC2 CE=VIL, OE=VIH, WE=VIL - 15 30 mA Read While Program Current (3) ICC3 CE=VIL, OE=VIH - 25 50 mA Read While Erase Current (3) ICC4 CE=VIL, OE=VIH - 25 50 mA Program While Erase Suspend Current ICC5 CE=VIL, OE=VIH - 15 35 mA ACC Accelerated Program Current IACC CE=VIL, OE=VIH ACC Pin - 5 10 Vcc Pin - 15 30 Standby Current ISB1 VCC=VCCmax,CE, RESET=VCC±0.3V WP/ACC= VCC± 0.3V or Vss±0.3V - 5 18 µA Standby Current During Reset ISB2 VCC=VCCmax, RESET=Vss± 0.3V, WP/ACC=VCC± 0.3V or Vss±0.3V - 5 18 µA Automatic Sleep Mode ISB3 VIH=VCC±0.3V, VIL=VSS±0.3V, OE=VIL, IOL=IOH=0 - 5 18 µA Input Low Level VIL -0.5 - 0.8 V Input High Level VIH 0.7xVcc - VCC+0.3 V Voltage for WP/ACC Block Temporarily Unprotect and Program Acceleration (4) VHH 8.5 - 12.5 V VCC = 3.0V ± 0.3V 25 mA mA Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB Parameter FLASH MEMORY Symbol Voltage for Autoselect and Block Protect (4) Test Conditions VID VCC = 3.0V ± 0.3V Output Low Level VOL IOL=100µA, VCC=VCCmin Output High Level VOH IOH=-100µA, Vcc = VCCmin Low Vcc Lock-out Voltage (5) VLKO Min Typ Max Unit 8.5 - 12.5 V - - 0.4 V VCC-0.4 - - V 1.8 - 2.5 V Notes : 1. The ICC current listed includes both the DC operating current and the frequency dependent component(at 5 MHz). The read current is typically 14 mA (@ VCC=3.0V , OE at VIH.) 2. ICC active during Internal Routine(program or erase) is in progress. 3. ICC active during Read while Write is in progress. 4. The high voltage ( VHH or VID ) must be used in the range of Vcc = 3.0V ± 0.3V 5. Not 100% tested. 6. Typical value are measured at Vcc = 3.0V,TA=25°C , Not 100% tested. CAPACITANCE(TA = 25 °C, VCC = 3.3V, f = 1.0MHz) Item Symbol Test Condition Min Max Unit CIN VIN=0V - 10 pF Output Capacitance COUT VOUT=0V - 10 pF Control Pin Capacitance CIN2 VIN=0V - 10 pF Input Capacitance Note : Capacitance is periodically sampled and not 100% tested. AC TEST CONDITION Parameter Value Input Pulse Levels 0V to Vcc Input Rise and Fall Times 5ns Input and Output Timing Levels Vcc/2 Output Load CL = 30pF Device Vcc Input & Output Test Point Vcc/2 Vcc/2 * CL= 30pF including Scope and Jig Capacitance CL 0V Input Pulse and Test Point Output Load AC CHARACTERISTICS Read Operations VCC=2.7V~3.6V Parameter Read Cycle Time (1) Symbol -7 -8 Unit -9 Min Max Min Max Min Max tRC 70 - 80 - 90 - ns Address Access Time tAA - 70 - 80 - 90 ns Chip Enable Access Time tCE - 70 - 80 - 90 ns Output Enable Time tOE - 25 - 25 - 35 ns CE & OE Disable Time (1) tDF - 16 - 16 - 16 ns Output Hold Time from Address, CE or OE (1) tOH 0 - 0 - 0 - ns Note : 1. Not 100% tested. 26 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY AC CHARACTERISTICS Write(Erase/Program)Operations Alternate WE Controlled Write VCC=2.7V~3.6V Parameter -7 Symbol Write Cycle Time (1) tWC Address Setup Time -8 -9 Unit Min Max Min Max Min Max 70 - 80 - 90 - ns tAS 0 - 0 - 0 - ns tASO 55 - 55 - 55 - ns tAH 45 - 45 - 45 - ns tAHT 0 - 0 - 0 - ns Data Setup Time tDS 35 - 35 - 45 - ns Data Hold Time tDH 0 - 0 - 0 - ns Address Hold Time tOES 0 - 0 - 0 - ns Read (1) tOEH1 0 - 0 - 0 - ns Toggle and Data Polling (1) tOEH2 10 - 10 - 10 - ns CE Setup Time tCS 0 - 0 - 0 - ns CE Hold Time tCH 0 - 0 - 0 - ns Write Pulse Width tWP 35 - 35 - 45 - ns Write Pulse Width High tWPH 25 - 25 - 30 - ns Output Enable Setup Time (1) Output Enable Hold Time Programming Operation Accelerated Programming Operation Word Byte Word Byte tPGM 14(typ.) 14(typ.) 14(typ.) µs 9(typ.) 9(typ.) 9(typ.) µs tACCPGM 9(typ.) 9(typ.) 9(typ.) µs 7(typ.) 7(typ.) 7(typ.) µs 0.7(typ.) 0.7(typ.) 0.7(typ.) sec Block Erase Operation (2) tBERS VCC Set Up Time tVCS 50 - 50 - 50 - µs Write Recovery Time from RY/BY tRB 0 - 0 - 0 - ns RESET High Time Before Read tRH 50 - 50 - 50 - ns RESET to Power Down Time tRPD 20 - 20 - 20 - µs Program/Erase Valid to RY/BY Delay tBUSY 90 - 90 - 90 - ns tVID 500 - 500 - 500 - ns RESET Pulse Width tRP 500 - 500 - 500 - ns RESET Low to RY/BY High tRRB - 20 - 20 - 20 µs VID Rising and Falling Time RESET Setup Time for Temporary Unprotect tRSP 1 - 1 - 1 - µs RESET Low Setup Time tRSTS 500 - 500 - 500 - ns RESET High to Address Valid tRSTW 200 - 200 - 200 - ns Read Recovery Time Before Write tGHWL 0 - 0 - 0 - ns CE High during toggling bit polling tCEPH 20 - 20 - 20 - ns OE High during toggling bit polling tOEPH 20 - 20 - 20 - ns Notes : 1. Not 100% tested. 2. The duration of the Program or Erase operation varies and is calculated in the internal algorithms. 27 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY AC CHARACTERISTICS Write(Erase/Program)Operations Alternate CE Controlled Writes VCC=2.7V~3.6V Parameter Symbol Write Cycle Time (1) -7 -8 -9 Unit Min Max Min Max Min Max 70 - 80 - 90 - tWC ns Address Setup Time tAS 0 - 0 - 0 - ns Address Hold Time tAH 45 - 45 - 45 - ns Data Setup Time tDS 35 - 35 - 45 - ns Data Hold Time tDH 0 - 0 - 0 - ns tOES 0 - 0 - 0 - ns Read (1) tOEH1 0 - 0 - 0 - ns Toggle and Data Polling (1) tOEH2 10 - 10 - 10 - ns WE Setup Time tWS 0 - 0 - 0 - ns WE Hold Time tWH 0 - 0 - 0 - ns CE Pulse Width tCP 35 - 35 - 45 - ns CE Pulse Width High tCPH 25 - 25 - 30 - ns Output Enable Setup Time (1) Output Enable Hold Time Programming Operation Accelerated Programming Operation Word tPGM Byte Word 14(typ.) 14(typ.) 14(typ.) µs 9(typ.) 9(typ.) 9(typ.) µs 9(typ.) 9(typ.) 9(typ.) µs 7(typ.) 7(typ.) 7(typ.) µs tACCPGM Byte Block Erase Operation (2) tBERS BYTE Switching Low to Output HIGH-Z tFLQZ 0.7(typ.) 25 0.7(typ.) - 25 0.7(typ.) - 30 sec - ns Notes : 1. Not 100% tested. 2.This does not include the preprogramming time. ERASE AND PROGRAM PERFORMANCE Limits Parameter Unit Min Typ Max Block Erase Time - 0.7 15 sec Chip Erase Time - 25 - sec Word Programming Time - 14 330 µs Chip Programming Time Erase/Program Endurance Excludes 00H programming prior to erasure Excludes system-level overhead - 9 210 µs Excludes system-level overhead Word Mode - 9 210 µs Excludes system-level overhead Excludes system-level overhead Byte Programming Time Accelerated Byte/Word Program Time Comments Byte Mode - 7 150 µs Word Mode - 14 42 sec Byte Mode - 18 54 sec 100,000 - - cycles Excludes system-level overhead Minimum 100,000 cycles guaranteed Notes : 1. 25 °C, VCC = 3.0V 100,000 cycles, typical pattern. 2. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte. In the preprogramming step of the Internal Erase Routine, all bytes are programmed to 00H before erasure. 28 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Read Operations tRC Address Stable Address tAA CE tOE tDF OE tOEH1 WE tCE tOH HIGH-Z Outputs HIGH-Z Output Valid HIGH RY/BY Parameter -7 Symbol -8 -9 Unit Min Max Min Max Min Max tRC 70 - 80 - 90 - ns Address Access Time tAA - 70 - 80 - 90 ns Chip Enable Access Time tCE - 70 - 80 - 90 ns Output Enable Time tOE - 25 - 25 - 35 ns CE & OE Disable Time (1) tDF - 16 - 16 - 16 ns tOH 0 - 0 - 0 - ns tOEH1 0 - 0 - 0 - ns Read Cycle Time Output Hold Time from Address, CE or OE OE Hold Time Note : 1. Not 100% tested. 29 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Hardware Reset/Read Operations tRC Address Stable Address tAA CE tRH tRP tRH tCE RESET tOH High-Z Outputs Parameter Output Valid -7 Symbol -8 -9 Unit Min Max Min Max Min Max tRC 70 - 80 - 90 - ns Address Access Time tAA - 70 - 80 - 90 ns Chip Enable Access Time tCE - 70 - 80 - 90 ns Read Cycle Time Output Hold Time from Address, CE or OE tOH 0 - 0 - 0 - ns RESET Pulse Width tRP 500 - 500 - 500 - ns RESET High Time Before Read tRH 50 - 50 - 50 - ns 30 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Alternate WE Controlled Program Operations tAS PA 555H Address Data Polling PA tRC tAH CE tOES OE tWC tCH tPGM tWP WE tWPH tCS tDF tDH A0H DATA tOE PD Status DOUT tBUSY tDS tCE tRB tOH RY/BY Notes : 1. DQ7 is the output of the complement of the data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data 4. The illustration shows the last two cycles of the program command sequence. Parameter Symbol -7 Min -8 Max Min -9 Max Min Max Unit Write Cycle Time tWC 70 - 80 - 90 - ns Address Setup Time tAS 0 - 0 - 0 - ns Address Hold Time tAH 45 - 45 - 45 - ns Data Setup Time tDS 35 - 35 - 45 - ns Data Hold Time tDH 0 - 0 - 0 - ns CE Setup Time tCS 0 - 0 - 0 - ns CE Hold Time tCH 0 - 0 - 0 - ns OE Setup Time tOES 0 - 0 - 0 - ns Write Pulse Width tWP 35 - 35 - 45 - ns Write Pulse Width High tWPH 25 - 25 - 30 - ns Programming Operation Accelerated Programming Operation Word Byte Word Byte tPGM 14(typ.) 14(typ.) 14(typ.) us 9(typ.) 9(typ.) 9(typ.) us 9(typ.) 9(typ.) 9(typ.) µs 7(typ.) 7(typ.) 7(typ.) µs tACCPGM Read Cycle Time tRC 70 - 80 - 90 - ns Chip Enable Access Time tCE - 70 - 80 - 90 ns Output Enable Time tOE - 25 - 25 - 35 ns CE & OE Disable Time tDF - 16 - 16 - 16 ns Output Hold Time from Address, CE or OE Program/Erase Valide to RY/BY Delay Recovery Time from RY/BY tOH 0 - 0 - 0 - ns tBUSY 90 - 90 - 90 - ns tRB 0 - 0 - 0 - ns 31 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Alternate CE Controlled Program Operations tAS 555H Address Data Polling PA PA tAH WE tOES OE tWC tPGM tCP CE tCPH tWS tDH PD A0H DATA DOUT Status tDS tBUSY tRB RY/BY Notes : 1. DQ7 is the output of the complement of the data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data 4. The illustration shows the last two cycles of the program command sequence. Parameter Symbol Write Cycle Time tWC -7 -8 -9 Min Max Min Max Min Max 70 - 80 - 90 - Unit ns Address Setup Time tAS 0 - 0 - 0 - ns Address Hold Time tAH 45 - 45 - 45 - ns Data Setup Time tDS 35 - 35 - 45 - ns Data Hold Time tDH 0 - 0 - 0 - ns OE Setup Time tOES 0 - 0 - 0 - ns WE Setup Time tWS 0 - 0 - 0 - ns WE Hold Time tWH 0 - 0 - 0 - ns CE Pulse Width tCP 35 - 35 - 45 - ns tCPH 25 - 25 - 30 - CE Pulse Width High Programming Operation Accelerated Programming Operation Word Byte Word Byte Program/Erase Valide to RY/BY Delay Recovery Time from RY/BY tPGM µs 9(typ.) 9(typ.) µs 9(typ.) 9(typ.) µs 14(typ.) 9(typ.) 9(typ.) tACCPGM 7(typ.) ns 14(typ.) 14(typ.) 7(typ.) µs 7(typ.) tBUSY 90 - 90 - 90 - ns tRB 0 - 0 - 0 - ns 32 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Word to Byte Timing Diagram for Read Operation tCE CE OE BYTE tELFL Data Output (DQ0-DQ7) DQ0-DQ7 DQ8-DQ14 Data Output (DQ8-DQ14) DQ15/A-1 Data Output (DQ15) Address Input (A-1) tFLQZ Byte to Word Timing Diagram for Read Operation tCE CE OE BYTE tELFH Data Output (DQ0-DQ7) DQ0-DQ7 Data Output (DQ8-DQ14) DQ8-DQ14 Address Input (A-1) DQ15/A-1 Data Output (DQ15) tFHQV BYTE Timing Diagram for Write Operation CE The falling edge of the last WE signal WE BYTE tSET (tAS) Parameter tHOLD(tAH) -7 Symbol -8 -9 Min Max Min Max Min Max Unit tCE - 70 - 80 - 90 ns tELFL/tELFH - 5 - 5 - 5 ns BYTE Switching Low to Output HIGH-Z tFLQZ - 25 - 25 - 30 ns BYTE Switching High to Output Active tFHQV - 25 - 25 - 35 ns Chip Enable Access Time CE to BYTE Switching Low or High 33 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Chip/Block Erase Operations tAS 555H Address 555H for Chip Erase 2AAH 555H 555H 2AAH BA tAH tRC CE tOES OE tWC tWP WE tWPH tCS tDH AAH DATA 10H for Chip Erase 55H 80H AAH 55H 30H tDS RY/BY Vcc tVCS Note : BA : Block Address Parameter Symbol -7 -8 -9 Min Max Min Max Min Max Unit Write Cycle Time tWC 70 - 80 - 90 - ns Address Setup Time tAS 0 - 0 - 0 - ns Address Hold Time tAH 45 - 45 - 45 - ns Data Setup Time tDS 35 - 35 - 45 - ns Data Hold Time tDH 0 - 0 - 0 - ns OE Setup Time tOES 0 - 0 - 0 - ns CE Setup Time tCS 0 - 0 - 0 - ns Write Pulse Width tWP 35 - 35 - 45 - ns Write Pulse Width High tWPH 25 - 25 - 30 - ns Read Cycle Time tRC 70 - 80 - 90 - ns VCC Set Up Time tVCS 50 - 50 - 50 - µs 34 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Read While Write Operations Read Command Read Command Read Read tRC tWC tRC tWC tRC tRC DA1 DA2 (PA) Address DA2 (555H) DA1 tAS DA2 (PA) DA1 tAH tAS tAA tAHT tCE CE tOE tCEPH OE tDF tOES tOEH2 tWP WE tDF tDH tDS Valid Output DQ Valid Input Valid Output Valid Input (A0H) Valid Output Status (PD) Note : This is an example in the program-case of the Read While Write function. DA1 : Address of Bank1, DA2 : Address of Bank 2 PA = Program Address at one bank , RA = Read Address at the other bank, PD = Program Data In , RD = Read Data Out Parameter Symbol -7 -8 -9 Unit Min Max Min Max Min Max tWC 70 - 80 - 90 - ns Write Pulse Width tWP 35 - 35 - 45 - ns Write Pulse Width High tWPH 25 - 25 - 30 - ns Write Cycle Time Address Setup Time tAS 0 - 0 - 0 - ns Address Hold Time tAH 45 - 45 - 45 - ns Data Setup Time tDS 35 - 35 - 45 - ns Data Hold Time tDH 0 - 0 - 0 - ns Read Cycle Time tRC 70 - 80 - 90 - ns Chip Enable Access Time tCE - 70 - 80 - 90 ns Address Access Time tAA - 70 - 80 - 90 ns Output Enable Access Time tOE - 25 - 25 - 35 ns OE Setup Time tOES 0 - 0 - 0 - ns OE Hold Time tOEH2 10 - 10 - 10 - ns CE & OE Disable Time tDF - 16 - 16 - 16 ns Address Hold Time tAHT 0 - 0 - 0 - ns CE High during toggle bit polling tCEPH 20 - 20 - 20 - ns 35 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Data Polling During Internal Routine Operation CE tDF tOE OE tOEH2 WE tCE tOH DQ7 Data In DQ7 HIGH-Z *DQ7 = Valid Data tPGM or tBERS DQ0-DQ6 Data In HIGH-Z Valid Data Status Data Note : *DQ7=Vaild Data (The device has completed the internal operation). RY/BY Timing Diagram During Program/Erase Operation CE The rising edge of the last WE signal WE Entire progrming or erase operation RY/BY tBUSY Parameter Program/Erase Valid to RY/BY Delay -7 Symbol Min -8 Max Min -9 Max Min Max Unit tBUSY 90 - 90 - 90 - ns Chip Enable Access Time tCE - 70 - 80 - 90 ns Output Enable Time tOE - 25 - 25 - 35 ns CE & OE Disable Time tDF - 16 - 16 - 16 ns Output Hold Time from Address, CE or OE OE Hold Time tOH 0 - 0 - 0 - ns tOEH2 10 - 10 - 10 - ns 36 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Toggle Bit During Internal Routine Operation tAS tAHT Address* tAHT tASO CE tOEH2 tCEPH WE tOEPH OE tDH tOE Status Data Status Data Status Data Data In DQ6/DQ2 Array Data Out RY/BY Note : Address for the write operation must include a bank address (A19) where the data is written. Enter Embedded Erasing Erase Suspend Erase WE Enter Erase Suspend Program Erase Suspend Read Erase Resume Erase Suspend Program Erase Suspend Read Erase Erase Complete DQ6 DQ2 Toggle DQ2 and DQ6 with OE or CE Note : DQ2 is read from the erase-suspended block. Parameter Symbol -7 -8 -9 Unit Min Max Min Max Min Max tOE - 25 - 25 - 35 ns OE Hold Time tOEH2 10 - 10 - 10 - ns Address Hold Time tAHT 0 - 0 - 0 - ns Address Setup tASO 55 - 55 - 55 - ns Address Setup Time tAS 0 - 0 - 0 - ns Output Enable Access Time tDH 0 - 0 - 0 - ns CE High during toggle bit polling tCEPH 20 - 20 - 20 - ns OE High during toggle bit polling tOEPH 20 - 20 - 20 - ns Data Hold Time 37 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS RESET Timing Diagram High RY/BY CE or OE tRH RESET tRP tREADY Reset Timings NOT during Internal Routine tREADY RY/BY tRB CE or OE tRP RESET Reset Timings during Internal Routine Power-up and RESET Timing Diagram tRSTS RESET Vcc Address DATA tAA Parameter RESET Pulse Width Symbol -7 -8 -9 Min Max Min Max Min Max Unit tRP 500 - 500 - 500 - ns RESET Low to Valid Data (During Internal Routine) tREADY - 20 - 20 - 20 µs RESET Low to Valid Data (Not during Internal Routine) tREADY - 500 - 500 - 500 ns tRH 50 - 50 - 50 - ns RESET High Time Before Read RY/BY Recovery Time tRB 0 - 0 - 0 - ns RESET High to Address Valid tRSTW 200 - 200 - 200 - ns RESET Low Set-up Time tRSTS 500 - 500 - 500 - ns 38 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY SWITCHING WAVEFORMS Block Group Protect & Unprotect Operations VID RESET Vss,VIL, or VIH Vss,VIL, or VIH BGA,A6 A1,A0 Valid Valid Block Group Protect / Unprotect DATA 60H Valid Verify 40H 60H Status* Block Group Protect:150µs Block Group UnProtect:15ms 1µs CE WE tRB OE tBUSY RY/BY Notes : Block Group Protect (A6=VIL , A1=VIH , A0=VIL) , Status=01H Block Group Unprotect (A6=VIH , A1=VIH, A0=VIL) , Status=00H BGA = Block Group Address (A12 ~ A19) Temporary Block Group Unprotect VID RESET Vss,VIL, or VIH Vss,VIL, or VIH CE WE tVID tRSP Program or Erase Command Sequence tRRB tVID RY/BY 39 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY PACKAGE DIMENSIONS 48-PIN LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I) Unit :mm/Inch 0.10 MAX 0.004 48 - TSOP1 - 1220F #48 #24 #25 0.50 0.0197 12.40 0.488 MAX ( 0.25 ) 0.010 #1 12.00 0.472 +0.003 0.008-0.001 0.20 -0.03 +0.07 20.00±0.20 0.787±0.008 1.00±0.05 0.039±0.002 0.05 0.002 MIN +0.075 0~8’C 0.45~0.75 0.018~0.030 +0.003 0.005-0.001 18.40±0.10 0.724±0.004 0.125 -0.035 0.25 0.010 TYP 1.20 0.047MAX ( 0.50 ) 0.020 40 Revision 0.0 July 2004