SEMIKRON SK70MD075

SK 70 MD 075 MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
MOSFET
)##
)3##
6
6*
- 1/ 0+ - 1/ .5 07 8
: 8 7 - .5 .5 07 8
<
Values
Units
2/
4 15
855 25
8;5
)
)
9
9
! ;5 === > 8/5
0
855 25
8;5
9
9
! ;5 === > 8/5
0
Inverse diode
®
SEMITOP 2
MOSFET Module
6? - ! 6
6?* - ! 6*
- 1/ .5 07
: 8 7 - .5 .5 07
<
Freewheeling CAL diode
6? - ! 6
- 0
9
0
<
SK70MD075
Target Data
)
Features
! "
# Typical Applications
$ 1)
% %
&'#
(
)
%
* ' +
+ - ./0
+ 85 9+ 8 8
Characteristics
Symbol Conditions
MOSFET
)C##
)3#
6##
63##
C#
)3# - 5 )+ 6 - /+@ 9
)3# - )#7 6 - /+@ 9
)3# - 5 )7 )# - )##7 < - 1/ 0
)3# - 415) 7)# - 5 )
6 - .5 97 )3# - 85 )7 < - 1/ 0
C#
6 - .5 97 )3# - 85 )7
*#?(
F
)3# - 5 )7 )# - 1/ )7 - 8 *G
<
- 81/ 0
! ;5 === > 81/
1@5
0
0
1/55 A B555
)
- 1/ 0+ min.
typ.
2/
1+/
B+B
@+1
max.
855
855
.+8
85+/
?
2
8+/
?
?
?
$#
F
) - /5 )7 )3# - 85 )7
6 - /5 9
C3 - /@ E
C<!
)
)
D9
9
E
E
Units
*#?( 8+8
HAI
Inverse diode
)#
6? - /5 97 )3# - 5 )7
6CC*
K
F
6? - /5 97 %< - 1/ 07 C3 - /@ E
9
D
)C - @/ 97 A - 855 9AD
<
- /5 0
5+J
)
Free-wheeling diode
)?
6? - 97 )3# - )
)
6CC*
K
F
6? - 97 %< - 0
9
D
) - 97 A - 9AD
Mechanical data
*8
L
1
15
#(*6 'N 1
M
;2
MD
1
19-02-2007 DIL
© by SEMIKRON
SK 70 MD 075 MOSFET,TRANSISTOR
Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C
Fig. 5 Breakdown voltage vs. temperature
Fig. 6 Typ. capacitancies vs. drain-source voltage
Fig. 7 Gate charge characteristic, IDp = 80 A
Fig. 8 Diode forward characteristic, tp = 80 µs
2
19-02-2007 DIL
© by SEMIKRON
SK 70 MD 075 MOSFET,TRANSISTOR
Dimensions in mm
#&33(# ( $(69*( (C ?C ( #$(C '6M# 9M ( *&M 6M3 '6M# 6M ( 'F 1 ;2
*
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
3
19-02-2007 DIL
© by SEMIKRON