SC1214 High Speed, Combi-SenseTM Two-Phase, Synchronous MOSFET Driver POWER MANAGEMENT Description Features u u u u The SC1214 is a high speed, Combi-SenseTM, two-phase driver designed to drive high-side and low-side MOSFETs in two synchronous Buck converters. The driver combined with Combi-Sense PWM controllers, such as Semtech SC2643VX or SC2643, provides a cost effective two-phase voltage regulator for advanced microprocessors u u The Combi-SenseTM is a technique to sense the inductor current for peak current mode control of voltage regulator without using sensing resistor. It provides the following advantages: - No costly precision sensing resistor - Lossless current sensing - High level noise free signal - Fast response - Suitable for wide range of duty cycle The detailed explanation of the technique can be found in the Applications Information section. u u u u u u High efficiency +12V gate drive voltage High peak drive current Adaptive non-overlapping gate drives provide shoot-through protection Support Combi-SenseTM and VID-on-fly operations Fast rise and fall times (15ns typical with 3000pf load) Ultra-low (<30ns) propagation delay (BG going low) Floating top gate drive Crowbar function for over voltage protection High frequency (to 1.5 MHz) operation allows use of small inductors and low cost ceramic capacitors Under-voltage-lockout Low quiescent current Applications A 30ns max propagation delay from input transition to the gate of the power FET’s guarantees operation at high switching frequencies. Internal overlap protection circuit prevents shoot-through from Vin to PGND in the main and synchronous MOSFETs. The adaptive overlap protection circuit ensures the bottom FET does not turn on until the top FET source has reached 1V, to prevent crossconduction. u Intel Pentium® processor power supplies u AMD AthlonTM and AMD-K8TM processor power supplies u High current low voltage DC-DC converters High current drive capability allows fast switching, thus reducing switching losses at high (up to 1.5MHz) frequencies without causing thermal stress on the driver. Under-voltage-lockout and over-temperature shutdown features are included for proper and safe operation. Timed latches and improved robustness are built into the housekeeping functions such as the Under Voltage Lockout and adaptive Shoot-through protection circuitry to prevent false triggering and to assure safe operation. The SC1214 is offered in a TSSOP-20 package. May 9, 2005 1 www.semtech.com SC1214 POWER MANAGEMENT Typical Application Circuit 1 ATX12V 1 C5 1800uF/16V + L2 L1 640nH C15 M1 VIN M5 C18 1uF R11 R8 VPN1 2 4.7uF/1206 C7 PN2 IR0 R3 C9 2.2nF R14 1.5K 10 R18 R15 C19 V_COREV_CORE+ M2 M6 C16 C20 0.1uF VCC C3 1nF 100 R2 VPN2 R5 C14 1R0 R9 OS2 C17 20 1 2 3 4 5 6 7 8 9 VID3 VID4 VCC DACSTEP FB GNDSEN ERROUT BGOUT OS1 R12 VPN2 C21 4.7uF VOUT C1 4.7uF VIN C11 D2 10 11 12 14 13 15 16 17 18 19 1uF D1N4148 R10 U2 VID2 VID1 VID0 PGOOD VID5 OSCREF AGND OUT1 OUT2 OUTSEN R13 SC2642 6 ATX12V C4 2 Note (1) + 1800uF/16V VOUT VRM_EN R17 OFFSET- (Open Collector/Drain Input, No Pull-up) VCC R16 OFFSET+ ATX12V DIFFERENTIAL PAIR FOR REMOTE SENSE Note (2) SC1214 Notes: (1) Output filter design: Please follow guidelines issued by Intel and AMD . (2) Please follow the guidelines issued by Intel and AMD . D1 D1N4148 VIN ROSC1 C2 1R0 R1 C12 4.7uF R6 1nF C13 VPN1 100 U1 1uF 2 TG1 M3 M7 VIN M4 M8 R7 0R0 C8 4.7uF/1206 PN1 R4 IR0 C10 2.2nF Pull-up Voltage VR10: 2V VRM9.x: 5V K-8: 12V + L3 1800uF/16V C6 1 2 VOUT + COUT1 PGND Note (1) VID5 VID0 VID1 VID2 VID3 VID4 Note (2) PWRGOOD (Open Collector Output) www.semtech.com 2 2005 Semtech Corp. BST1 VR EG1 1 DRN1 PGN D 20 BG1 19 C O1 4 VIN 1 17 NC 3 18 VIN 2 7 C O2 5 VPN 1 16 VPN 2 NC 15 8 VR EG2 BST2 13 14 10 PGN D 9 BG2 TG2 12 DRN2 11 SC1214 POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Parameter Symbol Maximum U nits VI N 16 V VBST-DRN, VTG-DRN 11 V BST to PGND VBST-PGND 40 V BST to PGND Pulse VBST-PULSE 45 V D RN to PGND VDRN-PGND -2 to 30 V D RN to PGND Pulse VDRN-PULSE -5 to 35 V VI N Supply Voltage BST, TG to D RN C onditions tPULSE < 100ns tPULSE < 200ns BG to PGND VBG-PGND 11 V VREG to PGND VREG-PGND 11 V V PN 16 V 20 V -0.3 to 8.5 V 1.76 W 17 °C /W TJ 0 to +150 °C Storage Temperature Range TSTG -65 to +150 °C Lead Temperature (Solderi ng) 10 Sec. TLEAD 300 °C VPN to PGND VPN to PGND Pulse tPULSE < 100ns VPN-PULSE PWM Input CO C onti nuous Power D i ssi pati on PD TA = 25°C , TJ =125°C Thermal Resi stance Juncti on to C ase Operati ng Juncti on Temperature Range NOTE: (1) This device is ESD sensitive. Use of standard ESD handling precautions is required. Electrical Characteristics Unless specified: TA = 25°C; VIN = 12V; VREG = 8.5V Parameter Symbol C onditions Min Typ Max U nits 9 12 15 V Pow er Supply Supply Voltage Qui escent C urrent, Operati ng VI N Iq_op 3.0 mA Start Threshold of VREG Voltage VREG_START 4 Hysteresi s VhysUVLO 160 mV U nder Voltage Lockout 4.3 V Internal LD O LD O Output VREG VI N = 9V to 15V 8.5 V D rop Out Voltage VDROP VI N = 5V to 8.8V 0.3 V 2005 Semtech Corp. 3 www.semtech.com SC1214 POWER MANAGEMENT Electrical Characteristics (Cont.) Unless specified: TA = 25°C; VIN = 12V; VREG = 8.5V Parameter Symbol C onditions Min Typ Max U nits C O1, C O2 Logi c Hi gh Input Voltage VCO_H Logi c Low Input Voltage VCO_L 2.0 V 0.8 V Thermal Shutdow n Over Temperature Tri p Poi nt TOTP 155 °C Hysteresi s THYST 10 °C H igh Side D river (TG1, TG2) Output Impedance RSRC_TG RSINK_TG VBST - VDRN = 8.5V 1.5 3.0 1.0 2.0 Ohm Ri se Ti me tR_TG C L = 3.3nF, VBST - VDRN = 8.5V 15 ns Fall Ti me tF_TG C L = 3.3nF, VBST - VDRN = 8.5V 10 ns Propagati on D elay, TG Goi ng Hi gh tPDH_TG VBST - VDRN = 8.5V 37 ns Propagati on D elay, TG Goi ng Low tPDL_TG VBST - VDRN = 8.5V 30 ns Low -Side D river (B G1, B G2) Output Impedance RSRC_BG RSINK_BG VREG = 8.5V 1.5 3.0 1.5 3.0 Ohm Ri se Ti me tR_BG C L = 3.3nF, VREG = 8.5V 10 ns Fall Ti me tF_BG C L = 3.3nF, VREG = 8.5V 10 ns Propagati on D elay, BG Goi ng Hi gh tPDH_BG VREG = 8.5V 20 ns Propagati on D elay, BG Goi ng Low tPDL_BG VREG = 8.5V 27 ns BG1, BG2 Mi ni mum Off-ti me(1) tOFF_BG 75 ns VREG rampi ng up tPDH_UVLO 2 µs VREG rampi ng down tPDL_UVLO 2 µs U nder-Voltage-Lockout Time D elay NOTE: (1) Guaranteed by design. 2005 Semtech Corp. 4 www.semtech.com SC1214 POWER MANAGEMENT Timing Diagrams CO DRN 1.0V TG t PDH_TG BG t PDL_TG t F_TG tR_TG 1.4V t PDL_BG tF_BG tPDH_BG Rising Edge Transition 2005 Semtech Corp. tR_BG Falling Edge Transition 5 www.semtech.com SC1214 POWER MANAGEMENT Ordering Information Pin Configurations Device Top View SC1214TSTR SC1214TSTRT(1)(2) (1) DRN1 TG1 BST1 CO1 NC VPN2 VIN2 VREG2 BG2 PGND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 PGND BG1 VREG1 VIN1 VPN1 NC CO2 BST2 TG2 DRN2 P ackag e Temp. Range( Tj) TSSOP-20 TSSOP-20 0 - 125°C 0 - 125°C Note: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Lead free product. This product is fully WEEE and RoHS compliant. (20-Pin TSSOP) Pin Descriptions Pin# Pin Name 2,12 TG1, TG2 1,11 DRN1, DRN2 The power phase node (or switching node) of the synchronous buck converter. This pin can be subjected to a negative spike up to -VREG relative to PGND without affecting operation. 3, 13 BST1, BST2 Bootstrap pin. A capacitor is connected between BST and DRN pins to develop the floating bootstrap voltage for the high-side MOSFET. The capacitor value is typically 1µF (ceramic). 18,8 VREG1,VREG2 4,14 CO1, CO2 16,6 VPN1, VPN2 10, 20 PGND 19,9 BG1, BG2 Output gate drive for the synchronous (bottom) MOSFET. 17,7 VIN1,VIN2 Supply power for low gate drive, LDO and the internal Combi-Sense input power rail of the converter. 2005 Semtech Corp. Pin Function Output gate drive for the switching (top) MOSFET. LDO output. Decouple with 1µF to 4.7µF (ceramic) with lead length no more than 0.2" (5mm). Logic level PWM input signal to the SC1214 supplied by external controller. An internal 50kohm resistor is connected from this pin to PGND. Virtual Phase Node. Connect an RC between this pin and the output sense point to Enable Combi-Sense TM operation. See the Typical Application Circuit. Ground. Keep these pins close to the synchronous MOSFETs source. 6 TM circuitry. Connect to www.semtech.com SC1214 POWER MANAGEMENT Block Diagram VIN1,2 LDO UVLO LOGIC VREG1,2 VPN1,2 BST1,2 CO1,2 CONTROL & OVERLAP PROT ECTION CIRCUIT TG1,2 DRN1,2 PGND 2005 Semtech Corp. BG1,2 7 www.semtech.com SC1214 POWER MANAGEMENT Outline Drawing - TSSOP-20 A DIM D e A A1 A2 b c D E1 E e L L1 N 01 aaa bbb ccc N 2X E/2 E1 E PIN 1 INDICATOR ccc C 2X N/2 TIPS 1 2 3 e/2 B aaa C SEATING PLANE DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .002 .031 .007 .003 .251 .169 .047 .006 .042 .012 .007 .255 .259 .173 .177 .252 BSC .026 BSC .018 .024 .030 (.039) 20 0° 8° .004 .004 .008 0.05 0.80 0.19 0.09 6.40 4.30 1.20 0.15 1.05 0.30 0.20 6.50 6.60 4.40 4.50 6.40 BSC 0.65 BSC 0.45 0.60 0.75 (1.0) 20 0° 8° 0.10 0.10 0.20 D A2 A C H A1 bxN bbb C A-B D c GAGE PLANE 0.25 L (L1) SEE DETAIL SIDE VIEW DETAIL A 01 A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H- 3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MO-153, VARIATION AC. Land Pattern - TSSOP-20 X DIM (C) G C G P X Y Z Z Y DIMENSIONS INCHES MILLIMETERS (.222) .161 .026 .016 .061 .283 (5.65) 4.10 0.65 0.40 1.55 7.20 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2005 Semtech Corp. 8 www.semtech.com