SEMTECH SC1302CISTRT

SC1302A/B/C/D/E/F
Dual High Speed Low-Side
MOSFET Driver
POWER MANAGEMENT
Description
Features
‹ +4.5V to +16.5V operation
‹ Fast rise and fall times (20ns typical with 1000pf
load)
‹ Dual MOSFET driver
‹ 2A peak drive current
‹ 40ns propagation delay
‹ 8-pin SOIC / MSOP packages
‹ Enable/disable control
‹ TTL-compatible input
‹ Under voltage lockout with hysteresis
‹ Low shutdown supply current
‹ Over temperature protection
‹ ESD protection
‹ Dual inverting/non-inverting and inverting/non-inverting configurations
The SC1302A/B/C/D/E/F family are low cost dual lowside MOSFET drivers. These drivers accept TTL-compatible inputs and are capable of supplying high current
outputs (> 2A peak) to external MOSFETs. Fast switching allows operation up to 1 MHz. The SC1302A/B/C is
available in six configurations: SC1302A is a dual noninverting, SC1302B is a dual inverting and SC1302C is a
one inverting plus one non-inverting output.
The SC1302D/E/F is the derivative part from SC1302A/
B/C with pin 1 (EN) and pin 8 (SHDN) internally tied to
VCC.
An under-voltage lockout circuit guarantees that the
driver outputs are low when Vcc is less than 4.5V (typ).
An internal temperature sensor shuts down the driver in
the event of over temperature.
Applications
‹ Switch-mode power supplies
‹ Battery powered applications
‹ Solenoid and motor drives
Typical Application Circuit
V lo a d
+12V
10uF
0 .1 u F
Load A
In p u tA
2
S C1302A
6
VCC
IN A
O U TA
1
8
Load B
7
EN
S H D N O U TB
5
In p u tB
4
IN B
GND
3
Revision: April 27, 2005
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Absolute Maximum Ratings
PRELIMINARY
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device
reliability.
Parameter
Symbol
Typ
Units
Supply Voltage
V CC
-0.3 to 20
V
Operating Supply Voltage
VCC
-0.3 to 16.5
V
Input Voltages
VINA, VINB
-0.3 to VCC
V
Peak Output Currents
IOUTA, IOUTB
3
A
V EN
-0.3 to VCC
V
VSHDN
-0.3 to VCC
V
Continuous Power Dissipation
Pd
Internally limited
W
Operating Temperature Range
TA
-40 to +125
°C
Thermal Resistance Junction to Ambient (MSOP)
θJ A
206
°C/W
Thermal Resistance Junction to Ambient (SOIC)
θJ A
165
°C/W
Storage Temperature Range
TSTG
-65 to +150
°C
Lead Temperature (Soldering)10 sec
TLEAD
260
°C
ESD Rating (Human Body Model)
ESD
2
kV
Enable Voltage (SC1302A/B/C)
Shutdown Voltage (SC1302A/B/C)
DC Electrical Characteristics
Unless otherwise specified: -40°C < TA < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C).
Parameter
Symbol
Conditions
Quiescent Current
IQ
Quiescent Current
Quiescent Current
Min
Typ
Max
Units
VCC < VSTART
1
1.8
mA
IQ
VEN = VSHDN = 3V for SC1302A/B/C,
VINA = VINB = 3V
5.7
8.1
mA
IQ
VSHDN = 0V for SC1302A/B/C
3
8
µA
VSTART
VSHDN = VEN = 3V for SC1302A/B/C,
VINA = VINB = 3V
4.2
4.5
4.7
V
VSHDN = VEN = 3V for SC1302A/B/C,
VINA = VINB = 3V
250
320
475
mV
2.0
Supply Current
Under-Voltage Lockout
Threshold Voltage
Hysteresis
Enable for SC1302A/B/C
Enable Voltage
V EN
0 < V EN < V C C
Disable Voltage
V EN
0 < V EN < V C C
 2005 Semtech Corp.
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V
0.8
V
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
DC Electrical Characteristics (Cont.)
Unless otherwise specified: -40°C < TA < 125°C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C).
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Enable for SC1302A/B/C (Cont.)
Delay to Output (1)
tD_EN
EN for low to high
70
ns
Delay to Output (1)
tD_DIS
EN from high to low
55
ns
IEN
0 < VIN < VCC
10
High Level Input Voltage
VIH
0 < VIN < VCC
2.0
Low Level Input Voltage
VIL
0 < VIN < VCC
Input Current
IIN
0 < VIN < VCC
Non-Inverting Input(s) of
SC1302A/C/D/F
Enable Input Current
14
19
µA
Input
0 < VIN < VCC
Inverting Input(s) of SC1302B/C/E/F
V
13
0.8
V
18.5
µA
-8
µA
(2)
Output
Output Peak Current
IPK_SOURCE
VOUT = 0.5V, tPW < 10uS
1600
mA
IPK_SINK
VOUT = VCC - 0.5V, tPW < 10uS
1600
mA
Shutdow n SC1302A/B/C (Cont.)
SHDN Input Voltage High
VSHDN
SHDN Input Voltage Low
VSHDN
SHDN Pin Current
ISHDN
2
VSHDN = 5V
V
32
0.3
V
40
µA
Thermal Shutdow n
Over Temperature Trip
Point(1)
TJ_OT
Hysteresis(1)
150
°C
10
°C
AC Electrical Characteristics
Unless otherwise specified: TA = 25°C, VCC = 12V, VEN = 5V, CL = 1000pF
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Rise time(1)
tR
See Timing Diagram
20
ns
Fall time(1)
tF
See Timing Diagram
20
ns
Propagation delay time(1)
tD1
See Timing Diagram
53
ns
Propagation delay time(1)
tD2
See Timing Diagram
41
ns
Notes:
(1) Guaranteed by design not tested in production.
(2) Negative sign indicates that the input current flows out of the device.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Timing Diagram
PRELIMINARY
5V
Inpu t
0V
90 %
10 %
tR
tF
90 %
N on -in ve rting
Ou tp u t
SC1302A
90 %
10 %
Inve rtin g
Ou tp u t
SC1302B
10 %
tF
tR
90 %
90 %
10 %
10 %
tD 1
tD2
Pin Descriptions
Pin #
SC1302A/D
SC1302B/E
SC1302C/F
Pin Function
Enable/disable control. When the EN is driven low, both outputs are
low. When left open, both outputs are low. Enable both drivers by tying
EN pin to a voltage greater than 2V. No connection on versions D, E
and F.
1
EN/NC
EN/NC
EN/NC
2
INA
INA
INA
TTL-compatible input to the driver A. When left open, Pin 7 is low.
3
GND
GND
GND
Ground.
4
INB
INB
INB
TTL-compatible input to the driver B. When left open, Pin 5 is low.
5
OUTB
OUTB
OUTB
Output gate drive B for external MOSFET.
6
VCC
VCC
VCC
Supply: +4.5V to +16.5V supply. During UVLO, the outputs are held
low.
7
OUTA
OUTA
OUTA
Output gate drive A for external MOSFET.
8
SHDN/NC
SHDN/NC
SHDN/NC
 2005 Semtech Corp.
Shutdown pin. Apply a voltage from 2V to VCC to enable device. Pull
below 0.3V for low-power shut down. No connection on versions D,
E and F.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Pin Configuration
Ordering Information
Part Number (2)
Top View
SC1302A/D (Dual Non-Inverting)
EN/NC
1
8
SHDN/NC
INA
2
7
OUTA
GND
3
6
VCC
INB
4
5
OUTB
P ackag e
(1)
Temp. Range (TA)
SC1302AISTRT
SC1302BISTRT
SC1302CISTRT
SC1302DSTRT
SOIC-8
-40°C to +125°C
MSOP-8
-40°C to +125°C
SC1302ESTRT
SC1302FSTRT
(8-Pin SOIC (A/D)
or MSOP (A only)
SC1302AIMSTRT
SC1302BIMSTRT
SC1302CIMSTRT
Top View
SC1302B/E (Dual Inverting)
EN/NC
1
8
SHDN/NC
INA
2
7
OUTA
GND
3
6
VCC
INB
4
5
OUTB
Notes:
(1) Only available in tape and reel packaging. A reel
contains 2500 devices.
(2) Lead free product.This product is fully WEEE and
RoHS compliant.
(8-Pin SOIC (B/E)
or MSOP (B only)
Top View
SC1302C/F (Inverting + Non-Inverting)
EN/NC
1
8
SHDN/NC
INA
2
7
OUTA
GND
3
6
VCC
INB
4
5
OUTB
(8-Pin SOIC (C/F)
or MSOP (C only)
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Block Diagrams
PRELIMINARY
EN
EN
VCC
PREDRIVER
OUTA
INA
PREDRIVER
OUTA
PREDRIVER
OUTB
BIAS
BIAS
INA
VCC
BANDGAP
BANDGAP
SHDN
BIAS
BIAS
SHDN
PREDRIVER
INB
SC1302A
EN
INB
SC1302B
GND
GND
VCC
PREDRIVER
OUTA
PREDRIVER
OUTB
BIAS
INA
OUTB
BANDGAP
BIAS
SHDN
INB
SC1302C
SC1302D
GND
SC1302E
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SC1302F
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Typical Characteristics
Rise and Fall Time vs. Supply Volta ge
Rise and Fall Time vs. Capa citive Loa d
80
25
V C C = 12V
f= 200K H z
T A = 25°C
C L = 1000pF
T A = 25°C
20
Time (ns)
Time (ns)
60
tf
tr
15
tf
40
tr
20
10
0
4
8
12
100
16
10000
Capacitive Load (pF)
Supply Voltage (V)
Supply Current vs. Capacitive Loa d
Input Pin Current
40
15
V C C = 12V
O ne D riverR unning
T A = 25°C
30
N on-inverting
10
Iin (uA)
Supply Currnt (mA)
1000
20
5
Inverting
0
200K H z
10
-5
100K H z
-10
0
100
1000
0
10000
8
12
Vin (V)
Capacitive Load (pF)
 2005 Semtech Corp.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Applications Information
PRELIMINARY
For simplicity, we assume that the gate capacitance of a
MOSFET is constant. The power delivered from the power
supply can be estimated based on this simplification. The
energy needed to charge the capacitor is given by:
The SC1302A/B/C/D/E/F is a high speed, high peak
current dual MOSFET driver. It is designed to drive power
MOSFETs with ultra-low rise/fall time and propagation
delays. As the switching frequency of PWM controllers is
increased to reduce power converters volume and cost,
fast rise and fall times are necessary to minimize switching
losses. While discrete solution can achieve reasonable
drive capability, implementing delay and other
housekeeping functions necessary for safe operation can
become cumbersome and costly. The SC1032A/B/C/
D/E/F presents a total solution for the high-speed, high
power density applications. Wide input supply range of
4.5V - 16.5V allows use in battery powered applications
as well as distributed power systems.
1
⋅ C ⋅ V2
2
where C is the load capacitance and V is the output
voltage swing of the driver.
E ON =
During turn off, the same amount of energy is dumped to
the ground. Therefore, the energy dissipated in one
switching cycle is:
E TOTAL = C ⋅ V 2
The power dissipation due to the gate driving actions is
given by:
Supply Bypass and Layout
PGATE = f ⋅ C ⋅ V 2
A 4.7µF to 10µF tantalum bypass capacitor with low ESR
(equivalent series resistance) and an additional 0.1µF
ceramic capacitor in parallel are recommended as supply
bypass to control switching and supply transients.
where, f is the switching frequency.
with V CC= 12V, C = 1nF and f = 200kHz, the power
dissipation per output is:
As with any high speed, high current circuit, proper layout
is critical in achieving optimum performance of the
SC1302A/B/C/D/E/F. Attention should be paid to the
proper placement of the driver, the switching MOSFET
and the bypass capacitors.
PGATE = (200 kHz ) ⋅ (1 nF) ⋅ (12) = 29mW
2
The corresponding supply current is:
I=
The driver should be placed as close as possible to the
external MOSFETs to eliminate the possibility of
oscillation caused by trace inductance and the MOSFET
gate capacitance. A resistor in the range of 10W could be
used in series with the gate drive to damp the ringing if
the drive output path is not short enough. The bypass
capacitors should also be placed closely between Vcc and
GND of the driver. A Schottky diode may be used to
connect the ground and the output pin to avoid latchups in some applications.
Thermal Information
The driver’s junction temperature must be kept within the
rated limit at any time. The application system has to
effectively remove the heat generated in the driver in order
for proper functions and performance. If the junction
temperature reaches 150oC, the internal protection
circuit will be triggered to shut down the gate driver.
Drive Capability and Power Dissipation
The power dissipation of the SC1302A/B/C/D/E/F should
be derated according to the following formula:
The SC1302A/B/C/D/E/F is able to deliver 1.6A peak
current for driving capacitive loads, such as MOSFETs.
Power Dissipatio n <
Fast switching of the MOSFETs significantly reduces
switching losses for high frequency applications. Thermal
stress is reduced and system reliability is improved.
 2005 Semtech Corp.
PGATE 29mW
=
= 2.4mA
VCC
12V
125°C − TA
θjA
where T = ambient temperature.
A
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Outline Drawing - MSOP-8
DIMENSIONS
INCHES
MILLIMETERS
DIM
MIN NOM MAX MIN NOM MAX
e/2
A
A
A1
A2
b
c
D
E1
E
e
L
L1
N
01
aaa
bbb
ccc
D
N
2X E/2
E1
PIN 1
INDICATOR
ccc C
2X N/2 TIPS
E
1 2
e
B
aaa C
SEATING
PLANE
D
1.10
0.00
0.15
0.75
0.95
0.22
0.38
0.08
0.23
2.90 3.00 3.10
2.90 3.00 3.10
4.90 BSC
0.65 BSC
0.40 0.60 0.80
(.95)
8
0°
8°
0.10
0.13
0.25
H
A2
C
.043
.000
.006
.030
.037
.015
.009
.003
.009
.114 .118 .122
.114 .118 .122
.193 BSC
.026 BSC
.016 .024 .032
(.037)
8
0°
8°
.004
.005
.010
A
c
GAGE
PLANE
A1
bxN
bbb
C A-B D
0.25
L
(L1)
DETAIL
SEE DETAIL
SIDE VIEW
01
A
A
NOTES:
1.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
4. REFERENCE JEDEC STD MO-187, VARIATION AA.
Land Pattern - MSOP-8
X
DIM
(C)
G
C
G
P
X
Y
Z
Z
Y
DIMENSIONS
INCHES
MILLIMETERS
(.161)
.098
.026
.016
.063
.224
(4.10)
2.50
0.65
0.40
1.60
5.70
P
NOTES:
1.
 2005 Semtech Corp.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT
Outline Drawing - SO-8
PRELIMINARY
A
D
e
N
DIM
A
A1
A2
b
c
D
E1
E
e
h
L
L1
N
01
aaa
bbb
ccc
2X E/2
E1 E
1
2
ccc C
2X N/2 TIPS
e/2
B
D
DIMENSIONS
INCHES
MILLIMETERS
MIN NOM MAX MIN NOM MAX
.069
.053
.004
.010
.049
.065
.012
.020
.007
.010
.189 .193 .197
.150 .154 .157
.236 BSC
.050 BSC
.010
.020
.016 .028 .041
(.041)
8
0°
8°
.004
.010
.008
aaa C
SEATING
PLANE
h
A2 A
C
A1
bxN
bbb
1.35
1.75
0.10
0.25
1.25
1.65
0.31
0.51
0.17
0.25
4.80 4.90 5.00
3.80 3.90 4.00
6.00 BSC
1.27 BSC
0.25
0.50
0.40 0.72 1.04
(1.04)
8
0°
8°
0.10
0.25
0.20
h
H
C A-B D
c
GAGE
PLANE
0.25
SEE DETAIL
A
L
(L1)
DETAIL
SIDE VIEW
01
A
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
4. REFERENCE JEDEC STD MS-012, VARIATION AA.
Land Pattern - SO-8
X
DIM
(C)
G
Z
Y
C
G
P
X
Y
Z
DIMENSIONS
INCHES
MILLIMETERS
(.205)
.118
.050
.024
.087
.291
(5.20)
3.00
1.27
0.60
2.20
7.40
P
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2. REFERENCE IPC-SM-782A, RLP NO. 300A.
Contact Information
Semtech Corporation
Power Management Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
 2005 Semtech Corp.
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