2STR1160 Low voltage fast-switching NPN power transistor Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Description SOT-23 The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Figure 1. Internal schematic diagram The complementary PNP is the 2STR2160. Applications ■ LED ■ Battery charger ■ Motor and relay driver ■ Voltage regulation Table 1. Device summary Order code Marking Package Packing 2STR1160 160 SOT-23 Tape and reel February 2008 Rev 1 1/11 www.st.com 11 Content 2STR1160 Content 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 2STR1160 1 Electrical ratings Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 60 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 1 A ICM Collector peak current (tP < 5ms) 2 A Ptot Total dissipation at Tamb = 25°C 0.5 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 250 °C/W IC TJ Table 3. Symbol Max. operating junction temperature Thermal data Parameter Rthj-amb(1) Thermal resistance junction-amb max 1. Device mounted on PCB area of 1 cm2 3/11 Electrical characteristics 2 2STR1160 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Min. Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = 60 V 0.1 µA IEBO Emitter cut-off current (IC =0) VEB = 5 V 0.1 µA Collector-base breakdown voltage (IE = 0) IC = 100 µA 60 V IC = 10 mA 60 V 5 V V(BR)CBO Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 µA VCE(sat)(1) Collector-emitter saturation voltage IC = 0.5 A IC = 1 A VBE(sat)(1) Base-emitter saturation voltage IC = 1 A hFE(1) ton toff DC current gain Resistive load Turn-on time Turn-off time 1. Pulsed duration = 300 µs, duty cycle ≤1.5% 4/11 Test conditions IB = 50 mA IB = 100 mA 130 210 210 430 mV mV IB = 100 mA 0.9 1.25 V 250 130 30 560 IC = 0.5 A VCE = 2V IC = 1 A VCE = 2V IC = 2 A VCE = 2V IC = 1.5 A 180 85 VCC = 10 V IB1 = -IB2 = 150 mA VBB(off)= -5 V 220 500 ns ns 2STR1160 2.1 Electrical characteristics Typical characteristic (curves) Figure 2. DC current gain (@ VCE=1 V) Figure 3. DC current gain (@ VCE=2 V) Figure 4. Base-emitter on voltage Figure 5. Base-emitter saturation voltage Figure 6. Collector-emitter saturation voltage Figure 7. Capacitance curves 5/11 Electrical characteristics Figure 8. 6/11 Resistive load switching time Figure 9. 2STR1160 Resistive load switching time 2STR1160 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/11 Package mechanical data 2STR1160 SOT-23 mechanical data mm. DIM. min. typ max. A 0.89 1.4 A1 0 0.1 B 0.3 0.51 C 0.085 0.18 D 2.75 3.04 e 0.85 1.05 e1 1.7 2.1 E 1.2 1.6 H 2.1 2.75 L S 0.6 0.35 0.65 0053390_G 8/11 2STR1160 Package mechanical data Figure 10. SOT-23 footprint 9/11 Revision history 4 2STR1160 Revision history Table 5. 10/11 Document revision history Date Revision 12-Feb-2008 1 Changes Initial release 2STR1160 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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