STMICROELECTRONICS HCF4007UB

HCF4007UB
DUAL COMPLEMENTARY PAIR PLUS INVERTER
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STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
MEDIUM SPEED OPERATION
tPD = 30ns (Typ.) AT 10V
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
DESCRIPTION
The HCF4007UB is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4007UB type is comprised of three
n-channel and three p-channel enhancement type
MOS transistors. The transistor elements are
accessible through the package terminals to
provide a convenient means for constructing the
various typical circuits as shown in typical
DIP
SOP
ORDER CODES
PACKAGE
TUBE
T&R
DIP
SOP
HCF4007UBEY
HCF4007UBM1
HCF4007UM013TR
applications. More complex functions are possible
using multiple packages. Number shown in
parentheses indicate terminals that are connected
together to form the various configuration listed.
PIN CONNECTION
March 2004
1/9
HCF4007UB
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
SYMBOL
2, 11
SP2, SP3
13, 1
DP1, DP2
8, 5
DN1, DN2
4, 9
SN2, SN3
12
DN/P3
6, 3, 10
G1 to G3
LOGIC DIAGRAM
NAME AND FUNCTION
Source Connections to
2nd and 3rd p-channel
transistors
Drain Connections from
the 1st and 2nd p-channel
transistors
Drain Connections from
the 1st and 2nd n-channel
transistors
Source Connections to
the 2nd and 3rd n-channel
Common connection to
the 3rd p-channel and
n-channel transistor
drains
Gate connections to
n-channel and p-channel
of the three transistor
pairs
7
VSS
Negative Supply Voltage
14
VDD
Positive Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Supply Voltage
Value
Unit
-0.5 to +22
V
VI
DC Input Voltage
-0.5 to VDD + 0.5
V
II
DC Input Current
± 10
mA
200
100
mW
mW
Top
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
PD
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
2/9
Parameter
Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Value
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
HCF4007UB
DC SPECIFICATIONS
Test Condition
Symbol
IL
VOH
VOL
VIH
VIL
IOH
IOL
II
CI
Parameter
Quiescent Current
High Level Output
Voltage
Low Level Output
Voltage
VI
(V)
Low Level Input
Voltage
Output Sink
Current
Input Leakage
Current
Input Capacitance
|IO| VDD
(µA) (V)
0/5
0/10
0/15
0/20
0/5
0/10
0/15
5/0
10/0
15/0
High Level Input
Voltage
Output Drive
Current
VO
(V)
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
Value
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
Any Input
Any Input
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
TA = 25°C
Min.
Typ.
Max.
0.01
0.01
0.01
0.02
0.25
0.5
1
5
4.95
9.95
14.95
-40 to 85°C
-55 to 125°C
Min.
Min.
7.5
15
30
150
4.95
9.95
14.95
0.05
0.05
0.05
4.95
9.95
14.95
4
8
12.5
1
2
2.5
-3.2
-1
-2.6
-6.8
1
2.6
6.8
±0.1
5
7.5
0.05
0.05
0.05
1
2
2.5
V
V
1
2
2.5
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
µA
V
4
8
12.5
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
±10-5
Max.
7.5
15
30
150
0.05
0.05
0.05
4
8
12.5
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
Max.
Unit
V
mA
mA
±1
µA
pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Test Condition
Symbol
Parameter
tPLH tPHL Propagation Delay Time
tTLH tTHL Transition Time
VDD (V)
5
10
15
5
10
15
Value (*)
Min.
Unit
Typ.
Max.
55
30
25
100
50
40
110
60
50
200
100
80
ns
ns
(*) Typical temperature coefficient for all VDD value is 0.3%/°C.
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HCF4007UB
TYPICAL APPLICATIONS
TRIPLE INVERTERS: (14, 2, 11); (8,13); (1, 5); (4,
7, 9)
3-INPUT NOR GATE: (13, 2); (1, 11); (12, 5, 8); (4,
7, 9)
3-INPUT NAND GATE: (1, 12, 13); (2, 14, 11);
(4, 8); (5, 9)
DUAL BIDIRECTIONAL TRASMISSION
GATING: (1, 5, 12); (2, 9); (11, 4); (8,13,10); (6, 3)
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HCF4007UB
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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HCF4007UB
Plastic DIP-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
a1
0.51
B
1.39
TYP
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
1.27
0.130
2.54
0.050
0.100
P001A
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HCF4007UB
SO-14 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45˚ (typ.)
D
8.55
E
5.8
8.75
0.336
6.2
0.228
0.344
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 ˚ (max.)
PO13G
7/9
HCF4007UB
Tape & Reel SO-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
A
MAX.
MIN.
330
13.2
TYP.
MAX.
12.992
C
12.8
D
20.2
0.795
N
60
2.362
T
8/9
TYP
0.504
22.4
0.519
0.882
Ao
6.4
6.6
0.252
0.260
Bo
9
9.2
0.354
0.362
Ko
2.1
2.3
0.082
0.090
Po
3.9
4.1
0.153
0.161
P
7.9
8.1
0.311
0.319
HCF4007UB
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2004 STMicroelectronics - All Rights Reserved
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