HCF4012B DUAL 4 INPUT NAND GATE ■ ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4012B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4012B DUAL 4-INPUT NAND GATE provides the system designer with direct DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF4012BEY HCF4012BM1 HCF4012M013TR implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. PIN CONNECTION September 2001 1/7 HCF4012B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 6, 8 2, 3, 4, 5 9, 10, 11, 12 1, 13 7 NC A, B, C, D E, F, G, H J, K VSS Negative Supply Voltage 14 VDD Positive Supply Voltage Not Connected Data Inputs Data Inputs Data Outputs TRUTH TABLE INPUTS LOGIC DIAGRAM OUTPUTS A, B, C, D E, F, G, H J, K L L H H L H L H H H H L ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current PD Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 V mA 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol VDD 2/7 Parameter Supply Voltage VI Input Voltage Top Operating Temperature Value Unit 3 to 20 V 0 to VDD V -55 to 125 °C HCF4012B DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) Low Level Input Voltage Output Sink Current Input Leakage Current Input Capacitance |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Input Voltage Output Drive Current VO (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 Value 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 <1 Any Input Any Input 5 10 15 20 5 10 15 5 10 15 5 10 15 5 10 15 5 5 10 15 5 10 15 18 TA = 25°C Min. Typ. Max. 0.01 0.01 0.01 0.02 0.25 0.5 1 5 4.95 9.95 14.95 -40 to 85°C -55 to 125°C Min. Min. 7.5 15 30 150 4.95 9.95 14.95 0.05 0.05 0.05 4.95 9.95 14.95 3.5 7 11 1.5 3 4 -3.2 -1 -2.6 -6.8 1 2.6 6.8 ±0.1 5 7.5 0.05 0.05 0.05 1.5 3 4 V V 1.5 3 4 -1.1 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±1 µA V 3.5 7 11 -1.15 -0.36 -0.9 -2.4 0.36 0.9 2.4 ±10-5 Max. 7.5 15 30 150 0.05 0.05 0.05 3.5 7 11 -1.36 -0.44 -1.1 -3.0 0.44 1.1 3.0 Max. Unit V mA mA ±1 µA pF The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) Test Condition Symbol Value (*) Unit Parameter VDD (V) tPLH tPHL Propagation Delay Time tTLH tTHL Output Transition Time 5 10 15 5 10 15 Min. Typ. Max. 125 60 45 100 50 40 250 120 90 200 100 80 ns ns (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. 3/7 HCF4012B TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 4/7 HCF4012B Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 5/7 HCF4012B SO-14 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.) PO13G 6/7 HCF4012B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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