M28R400CT-KGD M28R400CB-KGD Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional) ACCESS TIME: 100ns PROGRAMMING TIME – 10µs typical – Double Word Programming Option COMMON FLASH INTERFACE – 64 bit Security Code MEMORY BLOCKS – Parameter Blocks (Top or Bottom location) – Main Blocks BLOCK LOCKING – All blocks locked at Power Up – Any combination of blocks can be locked – WP for Block Lock-Down SECURITY – 64 bit user Programmable OTP cells – 64 bit unique device identifier – One Parameter Block Permanently Lockable AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M28R400CT: 882Ah – Bottom Device Code, M28R400CB: 882Bh June 2004 Figure 1. Delivery Form Wafer 1/11 M28R400CT-KGD, M28R400CB-KGD TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Delivery Form . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 FUNCTIONAL SPECIFICATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Product Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Physical Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 DIE SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. Die Photograph and Pad Location. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 4. Wafer/Die Orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 8. Pad Extraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PRODUCT TEST FLOW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. Product Test Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 HANDLING INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 9. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 10. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 M28R400CT-KGD, M28R400CB-KGD SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. ST's Known Good Die products are as reliable and of the same quality as products delivered in packages. This datasheet should be read in conjunction with the full M28R400C datasheet. The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming. The device features an asymmetrical blocked architecture. The M28R400C has an array of 15 blocks: 8 Parameter Blocks of 4 KWord and 7 Main Blocks of 32 KWord. M28R400CT has the Parameter Blocks at the top of the memory address space while the M28R400CB locates the Parameter Blocks starting from the bottom. The M28R400C features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and block erase. When VPP ≤VPPLK all blocks are protected against program or block erase. All blocks are locked at power-up. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 128 bit Protection Register and a Security Block to increase the protection of a system design. The Protection Register is divided into two 64 bit segments, the first one contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the tim- ings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The M28R400C are supplied with all the bits erased (set to ‘1’) Figure 2. Logic Diagram VDD VDDQ VPP 18 16 A0-A17 DQ0-DQ15 W E G M28R400CT M28R400CB RP WP VSS AI04392 Table 1. Signal Names A0-A17 Address Inputs DQ0-DQ15 Data Input/Output E Chip Enable G Output Enable W Write Enable RP Reset WP Write Protect VDD Core Power Supply VDDQ Power Supply for Input/Output VPP Optional Supply Voltage for Fast Program & Erase VSS Ground 3/11 M28R400CT-KGD, M28R400CB-KGD FUNCTIONAL SPECIFICATION Refer to the M28R400C (document number 7653 on the ST Internet web site http://www.st.com) for full functional and electrical specifications of the product. Table 2. and Table 3. give the main product specification and operating conditions while Table 4. and Table 5. summarize the Read and Write AC parameters which differ from those given in the M28R400C datasheet. See Table 6. and Table 7. for details of the die’s physical specification and manufacturing. Table 5. Write AC Characteristics Symbol Description Value Unit tAVAV Address Valid to Next Address Valid (min) 100 ns tELQV Chip Enable Low to Output Valid (max) 100 ns Table 6. Physical Specification Die Dimensions, X by Y (with scribe line) 141.024 mils x 98.504 mils Die Dimensions, X by Y (without scribe line) 137.008mils x 94.488mils Table 2. Product Specification Product Root Part Number M28R400CT M28R400CB Speed Option 100ns Delivery Form 3.582mm x 2.502mm 3.480mm x 2.400mm 9.84 mils Inked or mapped dice on whole unsawn wafer Die Thickness 725µm 3.56 mils x 3.56 mils Bond Pad Size 90.4µm x 90.4µm Table 3. Operating Conditions Supply Voltage VDD = VDDQ = 1.65V to 2.2V Junction Temperature Under Bias TJ (max) = 125°C Operating Temperature −40°C to +85°C Pad Area Free of Passivation Pad per Die Bond Pad Metallization 8172µm² 46 AlCU, TiN No Metal Table 4. Read AC Characteristics Die Backside Symbol Description Value Unit tAVAV Address Valid to Next Address Valid (min) 100 ns tAVQV Address Valid to Output Valid (max) 100 ns tEHQZ Chip Enable High to Output Hi-Z (max) 25 tELQV Chip Enable Low to Output Valid (max) 100 tGHQZ Output Enable High to Output Hi-Z (max) 25 ns tGLQV Output Enable Low to Output Valid (max) 30 ns May be grounded Passivation USG, Si3N4 Table 7. Manufacturing Information ns ns Manufacturing Location Die Revision Catania (M5 fab), Italy – V2 Manufacturing Location Die Revision Agrate (R2 fab), Italy – V1 Wafer Sort and Test Location Agrate and Catania, Italy Manufacturing ID Preparation for Shipment Fabrication Process 4/11 12.67 mils² SA2B9AZ Agrate and Catania, Italy 0.18µm technology M28R400CT-KGD, M28R400CB-KGD DIE SPECIFICATIONS Figure 3. Die Photograph and Pad Location 1 10 46 11 35 21 22 34 LOGO Figure 4. Wafer/Die Orientation WAFER FRONT SIDE LOGO LOGO LOGO LOGO LOGO LOGO LOGO LOGO AI08416 5/11 M28R400CT-KGD, M28R400CB-KGD Table 8. Pad Extraction Pad Placement Pad Number Pad Function X 1 A15 2 Pad Placement Y Pad Number Pad Function X Y –1612.24 1068.60 24 VSS 1385.72 –1023.68 A14 –1477.72 1068.60 25 G 1266.60 –1023.68 3 A13 –1315.88 1068.60 26 DQ0 1141.00 –1023.68 4 A12 –1190.28 1068.60 27 DQ8 1008.92 –1023.68 5 A11 –1071.16 1068.60 28 DQ1 889.80 –1023.68 6 A10 –945.56 1068.60 29 DQ9 757.72 –1023.68 7 A9 –783.72 1068.60 30 DQ2 638.80 –1023.68 8 A8 –658.12 1068.60 31 DQ10 506.52 –1023.68 9 W –539.00 1068.60 32 DQ3 387.40 –1023.68 10 RP –377.16 1068.60 33 DQ11 255.32 –1023.68 11 VPP 249.16 1068.60 34 VDD 136.20 –1023.68 12 WP 374.76 1068.60 35 DQ4 –255.08 –1023.68 13 NC 536.60 1068.60 36 DQ12 –387.16 –1023.68 14 A17 655.72 1068.60 37 DQ5 –506.28 –1023.68 15 A7 781.32 1068.60 38 DQ13 –638.36 –1023.68 16 A6 943.16 1068.60 39 DQ6 –757.48 –1023.68 17 A5 1068.76 1068.60 40 DQ14 –889.56 –1023.68 18 A4 1187.88 1068.60 41 DQ7 –1008.68 –1023.68 19 A3 1313.48 1068.60 42 DQ15 –1140.76 –1023.68 20 A2 1475.32 1068.60 43 NC –1266.36 –1023.68 21 A1 1609.84 1068.60 44 VSS –1385.48 –1023.68 22 A0 1636.92 –1023.68 45 VDDQ –1504.60 –1023.68 23 E 1504.84 –1023.68 46 A16 –1636.68 –1023.68 Note: 1. All pad placements are referred to the center of the chip and center of the pad. The coordinates can be used to operate wire bonding equipment. 2. NC = Pad not connected. 3. Dimensions are given in microns. 6/11 M28R400CT-KGD, M28R400CB-KGD PRODUCT TEST FLOW Figure 5. gives an overview of ST’s Known Good Die test flow. STMicroelectronics implements quality assurance procedures throughout the product test flow. In addition, an off-line quality monitoring program is im- plemented to ensures that ST’s quality standards are met on Known Good Die products. With ST’s quality procedures, Known Good Die products can be produced without requiring burnin. Figure 5. Product Test Flow Wafer Sort 1 DC Parameters Functionality Programmability Erasability BAKE 24 hours at 250˚C Data Retention Wafer Sort 2 DC Parameters Functionality Programmability Erasability BAKE 12 hours at 250˚C Wafer Sort 3 High Temperature Packaging and Shipment DC Parameters Functionality Programmability Erasability Speed Visual Inspection Sampling Wafer Pack ai08366 7/11 M28R400CT-KGD, M28R400CB-KGD HANDLING INSTRUCTIONS Processing Known Good Die products should not be exposed to ultraviolet light or be processed at temperatures greater than 250°C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, ST recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. 8/11 Storage Known Good Die products should be stored at a maximum temperature of 30°C in a nitrogenpurged cabinet or a vacuum-sealed bag. All standard ESD (ElectroStatic Discharge) handling procedures should be observed. M28R400CT-KGD, M28R400CB-KGD PART NUMBERING Table 9. Ordering Information Scheme Example: M28R400C T 100 D1 6 Device Type M28 Operating Voltage R = VDD = 1.65V to 2.2V; VDDQ = 1.65V or 2.2V Device Function 400C = 4 Mbit (256Kb x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 100 = 100ns Packaging D1 = Inked or mapped dice on whole unsawn wafer Temperature Range 6 = –40 to 85 °C Note:Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed and Delivery Form) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. 9/11 M28R400CT-KGD, M28R400CB-KGD REVISION HISTORY Table 10. Document Revision History Date Version 12-Jun-2003 1.0 First Issue. 15-Jun-2004 2.0 Title modified, -KGD suffix added to part number. 10/11 Revision Details M28R400CT-KGD, M28R400CB-KGD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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