Known Good Die (KGD) and Wafer Solutions

Known Good Die (KGD)/Wafer Level Memories
Introduction
Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support,
guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for
DRAMs, PSRAMs and SRAMs. Core to our strategy is to provide long term support for applications such as automotive,
communications and industrial markets where design cycles can be 3-4 years from concept to production, followed by 5-6
years product life. Recognizing the unique fit of ISSI products with die-level customers needs, ISSI created a business
unit to focus on die-level products to provide highest quality products with long term support.
For your stacked die product to be successful you require a memory supplier who has extensive experience directly
supporting the die-level market. This means a dedicated engineering team developing products which are specifically
defined, designed, and tested to meet die customer needs.
ISSI SOLUTIONS
KGD CUSTOMER NEEDS

• Low to medium density SDRAMs: 16Mb-512Mb, SDR, DDR, DDR2
• Broadest portfolio of SRAMs and PSRAMs in the industry
Low Power Solutions

• Lowest power mobile devices in the industry
• 16Mb-512Mb LP-SDR & LP-DDR options, PSRAMs, Ultra-Low
Power SRAMs
Long Life Cycle

• Long product life: 7-10 years typical
• Advanced process nodes for future products
High Quality
(Low ppm)

• KGD test flow includes Wafer Level Burn In (WLBI) & Speed-Sort
• MCP Final Test Yield Target >99.9% for KGD
Reliable Supply

• Wafer Bank to support volume production
• Volume wafer purchase for lower total cost
Test Flow options

• Full KGD test flow option
• Proprietary voltage and temperature stress scheme emulates
package level burn-in
Custom Pad Layout

• Pad layouts designed for KGD use
• ReDistribution Layer (RDL) or Bumped Die for custom pad layout
Product Portfolio
Summary
ISSI has a proven track record providing wafer & die solutions to many leading chipset and system companies. We are
committed to working with our customers to provide them with the most cost-effective and highest quality products, so
when you begin planning your next generation MCP or Stacked Die contact ISSI and see how we can “enable your MCP
to be successful”.
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com
Selecting a Die Product
• Stacked die offers
smallest form
factor, lower cost,
improved reliability
• Bonding pads on
two-edges
• RDL & bumped die
options for flip chip
and CSP
• LP-SDR, LP-DDR,
SDR/DDR, DDR2,
• EDO/Fast Page DRAM
• PSRAM, SRAM
• 1.8V, 2.5V and 3.3V
• 5V option for EDO/FP
DRAMs and Async. SRAMs
• Speed and temperature
grades
• Technical support,
assembly information,
SIP/ MCP level testing
Terminology
• Wafer probe = Test die in wafer form
using Probe Card
• CP = Chip Probe (aka wafer probe test
step)
• WLBI = Wafer Level Burn In
• Speed Sort = High speed wafer test
• Sorted Die or Tested Die = Die that has
limited testing, i.e. Sort test only
• KGD = Known Good Die (fully tested die
including WLBI and speed sort)
• SIP = System In Package
• MCP = Multi Chip Package
• MCM = Multi-Chip Module
• POP = Package on Package
• COB = Chip On Board
• SOC = System On Chip
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com
SDRAM and PSRAM Selection Guide
MEMORY TYPE(1)
DENSITY
CONFIG.(2)
16Mb
1Mx16
32Mb
2Mx16, 1Mx32
64Mb
4Mx16, 2Mx32
128Mb
8Mx16, 4Mx32
32Mb
2Mx16, 1Mx32
64Mb
4Mx16, 2Mx32
128Mb
8Mx16, 4Mx32
256Mb
16Mx16, 8Mx32
512Mb
32Mx16, 16Mx32
16Mb
1Mx16
32Mb
2Mx16
64Mb
4Mx16
16Mb
1Mx16
64Mb
4Mx16
128Mb
256Mb
512Mb
8Mx16, 4Mx32
16Mx16, 8Mx32
32Mx16, 16Mx32
MOBILE PRODUCTS
LP-SDR
LP-DDR
SYNCHRONOUS DRAM
PSRAM /
CRAM
SDR
64Mb
DDR(4)
4Mx16, 2Mx32
4Mx16
128Mb
256Mb
512Mb
8Mx16, 4Mx32
16Mx16, 8Mx32
32Mx16, 16Mx32
PART # / DIE REVISION
IS42SM16100G
IS42RM16100G
IS42VM16100G
IS42SM16200C / 32100C
IS42RM16200C / 32100C
IS42VM16200C / 32100C
IS42SM16400G / 32200G
IS42RM16400G / 32200G
IS42VM16400G / 32200G
IS42SM16400K / 32200K(3)
IS42RM16400K / 32200K(3)
IS42VM16400K / 32200K(3)
IS42SM16800G / 32400G
IS42RM16800G / 32400G
IS42VM16800G / 32400G
IS43LSR16200C / 32100C
IS43LRR16200C / 32100C
IS43LR16200C / 32100C
IS43LSR16400B / 32200B
IS43LRR16400B / 32200B
IS43LR16400B / 32200B
IS43LSR16800F / 32400F
IS43LRR16800F / 32400F
IS43LR16800F / 32400F
IS43LSR16160E / 32800E
IS43LRR16160E / 32800E
IS43LR16160E / 32800E
IS43LSR16320C / 32160C
IS43LRR16320C / 32160C
IS43LR16320C / 32160C
IS66WVC1M16ALL
IS66WVD1M16ALL
IS66WVE1M16ALL/BLL
IS66WVC2M16ALL
IS66WVD2M16ALL
IS66WVE2M16ALL/BLL
IS66WVC4M16ALL
IS66WVD4M16ALL
IS66WVE4M16ALL/BLL
IS42S16100F
IS42R16100F
IS42VS16100F
IS42S16400F / 16401F
IS42S16400J(3)
IS42S16800F / 32400F
IS42S16160G / 32800G
IS42S16320D / 32160D
IS43R16400A / 32200A
IS43R16401A / 32201A
IS43R16400B(3)
IS43R16800E / 32400E
IS43R16160D / 32800D
IS43R16320D / 32160D
Notes:
1. SDR = Single Data rate, DDR = Double Data rate, LP = Low Power or Mobile
2. x16 and x32 configuration selected by bonding option
3. Die Shrink - recommended for new designs
4. ISSI continues to introduce new DDR2 devices in a range of densities
VDD
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
3.3V
2.5V
1.8V
1.8V
1.8V
1.8V/3.0V
1.8V
1.8V
1.8V/3.0V
1.8V
1.8V
1.8V/3.0V
3.3V
2.5V
1.8V
3.3V
3.3V
3.3V
3.3V
3.3V
2.5V
2.5V
2.5V
MAX. SPEED
200Mhz
166Mhz
166Mhz
200Mhz
200Mhz
166Mhz
200Mhz
166Mhz
166Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
166Mhz
200Mhz
200Mhz
166Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
166Mhz
200Mhz
200Mhz
166Mhz
133Mhz
133Mhz
70ns
133Mhz
133Mhz
70ns
133Mhz
133Mhz
70ns
200Mhz
200Mhz
133Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
200Mhz
STATUS
Prod
Prod
Prod
Prod
Prod
Prod
Prod
Prod
Prod
S=Q1/11
S=Q1/11
S=Q1/11
Prod Q1/11
Prod Q1/11
Prod Q1/11
Prod
Prod
Prod
S=Q1/11
S=Q1/11
S=Q1/11
Prod Q1/11
Prod Q1/11
Prod Q1/11
Contact Marketing
Contact Marketing
Contact Marketing
Contact Marketing
Contact Marketing
Contact Marketing
Prod Q1/11
Prod Q1/11
Prod Q1/11
Contact Marketing
Contact Marketing
Contact Marketing
Prod
Prod
Prod
Prod
Prod
Prod Q1/11
Prod
S=Q1/11
Contact Marketing
Contact Marketing
S=Q1/11
S=Q1/11
S=Q1/11
S=Q1/11
2.5V
2.5V
2.5V
200Mhz
200Mhz
200Mhz
Contact Marketing
Contact Marketing
S=Q1/11
Status:
S = Samples
Prod = Production
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com
EDO & Fast Page Mode DRAM Selection Guide
MEMORY TYPE(1)
DENSITY
CONFIG.(2)
256Kx16
4Mb
ASYNCHRONOUS DRAM
1Mx4
EDO
4Mx4
16M
1Mx16
256Kx16
4M
1Mx4
Fast Page
(FP)
4Mx4
16M
1Mx16
PART # / DIE REVISION
VDD
MAX. SPEED
IS41LV16256C
3.3V
35ns
STATUS
Prod Q1/11
IS41C16256C
5.0V
35ns
Prod Q1/11
IS41LV4100C
3.3V
35ns
Prod Q1/11
IS41C4100C
5.0V
35ns
Prod Q1/11
IS41LV44002C
3.3V
50ns
Prod Q1/11
IS41C44002C
5.0V
50ns
Prod Q1/11
IS41LV16100C
3.3V
50ns
Prod Q1/11
IS41C16100C
5.0V
50ns
Prod Q1/11
IS41LV16257C
3.3V
35ns
Prod Q1/11
IS41C16257C
5.0V
35ns
Prod Q1/11
IS41LV4105C
3.3V
35ns
Prod Q1/11
IS41C4105C
5.0V
35ns
Prod Q1/11
IS41LV44052C
3.3V
50ns
Prod Q1/11
IS41C44052C
5.0V
50ns
Prod Q1/11
IS41LV16105C
3.3V
50ns
Prod Q1/11
IS41C16105C
5.0V
50ns
Prod Q1/11
IS41LV16100C
3.3V
50ns
Prod Q1/11
IS41C16100C
5.0V
50ns
Prod Q1/11
SRAM Selection Guide
SYNCHRONOUS
MEMORY TYPE(1)
5V
Legacy
5V
High Speed
5V
Low Power
3.3V
High
Speed
2.5V-3.6V
1.65 - 3.6V
Low
Power
Pipeline/
ASYNCHRONOUS
VOLTAGE(2)
3.3V
1.65 - 3.6V
3.3V
Flow Thru
2.5V
3.3V
No-Wait
(aka ZBT)
2.5V
QUAD/
QUADP
DDR-II/
DDR-IIP
1.8V
1.8V
CONFIG(3)
x8
x16
x8
x16
x8
x16
x16
x8
x16
x32
x8
x8
x16
x18
x32
x36
x72
x18
x36
x72
x18
x32
x36
x72
x18
x36
x72
x18
x36
x18
x36
64K
✓
256K
✓
512K
✓
✓
✓
✓
1M
✓
✓
✓
2M
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
4M
✓
✓
✓
✓
✓
✓
✓
✓
8M
16M
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
18M
36M
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
72M
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
Note:
1. Refer to ISSI Product Selector Guide for complete list of SRAM types and part #. All products can be supported as Probed (sorted) Die
2. Check product datasheet for VCC and VCCQ specs
3. ISSI can support different speed/power and configurations. Contact Marketing for details.
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com
Known Good Die (KGD) Production Flow Options
100% Wafer Level Burn In
PD

KGD
KTD



100% Sort at Hot temp.
Bad / Weak Cell Screen
Process Defect Screen
Simple DC Current and Function Test
100% Sort Hot temp.
Bad / Weak Cell repair check
Function Test
100% Sort at Cold temp.
Bad / Weak Cell repair check
Function Test
100% Speed Sort at Hot temp.
Function Test
High speed / AC Test
Notes:
• Specific details are defined in the test flow for each device with temperature and voltage guard-bands
• High Speed Tester and “Speed Probe Card” used for CP4
Test Flow Definitions:
KGD = Known Good Die: includes WLBI and Speed Sort
KTD = Known Test Die: same as KGD, without Speed Sort
PD = Probed (Sorted) Die: No WLBI, speed or temp sort, CP1 (Hot Temp.) + CP2 (Room Temp.) only
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com
XX
XX
Part Number
XXX
SRAM/PSRAM VDD
ALL = 1.8V
BLL = 3.0V
SRAM Sub Family
61/63 = High Speed
62 = Low Power
66 = Pseudo SRAM
PSRAM Sub Family
WV = Wide Voltage
A = ADMUX
C= CRAM 1.5
D = CRAM 2.0
E = Asynch/Page
XX
Confirm exact part # from ISSI Die Datasheet
Die Revision
Memory Size
100 = 1M
200 = 2M
400 = 4M
800 = 8M
160 = 16M
320 = 32M
Bus Width
8 = x8
16 = x16
32 = x32
DRAM Sub Family
S = 3.3V SDR
R = 2.5V SDR / DDR
VS = 1.8V SDR
SM = 3.3V Mobile SDR
RM = 2.5V Mobile SDR
VM = 1.8V Mobile SDR
LR = 1.8V Mobile DDR1
LRR = 2.5V Mobile DDR1
LRS = 3.3V Mobile DDR1
DR = 1.8V DDR2
Product Family
41xx = EDO/FP DRAM
42xx/43xx = SDRAM
61xx/63xx = HS SRAM
62xx = LP SRAM
66xx = SRAM/PSRAM
ISSI Prefix
IS
X
XX
Packing
JP = JAR pack*1
WB = Wafer Boat
WP = Waffle Pack
TR = Tape & Reel
Inking
N = Inked
U = Un-inked / Electronic Mapping File
Back Grinding Thickness
29 = 29 mil
19 = 19 mil
yy = other thickness (specify)
–
Die Type
X = Die (Lead Free)
R = RDL (pads, no bumping)
L = Lead Free Bumping / RDL
P = Leaded Bumping / RDL
C = Cu Lead Free Bumping / RDL
Test Flow*2
K = KGD at Level 1 temp 0 to +70C
G = KGD at Level 2 temp -20 to +85C
D = KGD at Level 3 temp (auto) -40 to +85C
I = KTD
C = Probed Die-PD (Sorted Die)
X XX
Speed Grade
‘x’ ns for KGD
‘blank’ for KTD & PD (default is slowest speed grade on datasheet)
X
1* Jar Pack is default wafer packing option. For other options please contact KGD Product Marketing
2* Not all products are supported with all test flows. Contact KGD Product Marketing for detailed availability.
X – XX
ISSI DIE ORDERING INFORMATION
Memory Products in Wafer Form
Addressing the market need for a smaller form factor, lower cost solution, extreme temperature, or custom
package, ISSI offers a broad range of memory products in die or wafer form. Consumer products require
multi-chip packages (MCPs) to meet the stringent space requirements of cell phones, digital cameras,
PDA’s and many other mobile-products. ISSI has experience providing low power KGD at millions of units
per month run rate. For other applications such as harsh operating conditions ISSI can supply probed die in
volumes starting from a single wafer. Whatever your application or volume requirements ISSI’s wafer level
products provide the memories you are familiar with, in a fully tested wafer form, that can be readily used in
your MCP or custom package.
ISSI Specialist Die Distributor
ISSI, in conjunction with our value added die distributor, can provide a wide range of solutions for your die related needs.
www.micross.com
Micross Components Team
Corporate Headquarters
Micross Components Austin, TX
Tel: 1-888-330-8811
Fax: 512-339-6641
[email protected]
EUROPE
Micross Components Ltd, Norwich, UK
Tel: +44 (0) 1603 788967
Fax: +44 (0) 1603 788920
USA
Micross Components Reading, PA
Tel: 610-374-3796
Fax: 610-374-0630
Micross Components Hatfield, PA
Tel: 215-997-3200
Fax: 215-997-2966
Micross Components Fairfield, NJ
Tel: 973-227-8007
Fax: 973-227-4766
ISSI Sales Offices
*HEADQUARTERS
Taiwan Office
China Office
Korea Office
West Coast Office
Hsin-Chu
Shanghai
Kyunggi-Do
San Jose, CA
886-3-5780333 Tel.
86-21-50802288 Tel.
82-31-715-6406 Tel.
408-969-6600 Tel.
886-3-5783000 Fax
86-21-50802028 Fax
82-31-715-6209 Fax
Europe Office
Taiwan Office
China Office
Japan Office
Devon England
Taipei
Shenzhen
Tokyo
44-1803-840110 Tel.
886-2-26962140 Tel.
86-755-26633977 Tel.
81-3-5339-2950 Tel.
44-1803-865199 Fax
886-2-26962252 Fax
86-755-26633984 Fax
81-3-5339-2951 Fax
Brazil Office
China Office
China Office
55-11-2574-7270 Tel.
Beijing
Hong Kong
55-11-7985-0505 Tel.
86-10-82274081 Tel.
852-23192211 Tel.
55-11-5181-2387 Fax
86-10-82274082 Tel.
852-23192004 Fax
408-969-7800 Fax
86-10-82274079 Fax
For other locations contact [email protected]
1940 Zanker Rd. • San Jose, CA. 95112 • Tel: 408.969.6600 • [email protected] • www.issi.com