M54HC132 RAD-HARD QUAD 2-INPUT SCHMITT NAND GATE ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VH(TYP.) = 0.9 V AT VCC = 5 V SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 132 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9201-120 DESCRIPTION The M54HC132 is an high speed CMOS QUAD 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS technology. DILC-14 FPC-14 ORDER CODES PACKAGE FM EM DILC FPC M54HC132D M54HC132K M54HC132D1 M54HC132K1 Pin configuration and function are identical to those of the M54HC00. The hysteresis characteristics (around 20% VCC) of all inputs allow slowly changing input signals to be transformed into sharply defined jitter-free output signals. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION March 2004 1/7 M54HC132 IEC LOGIC SYMBOLS INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N° SYMBOL 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 1A to 4A 1B to 4B 1Y to 4Y GND VCC 14 NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A B Y L L H H L H L H H H H L ABSOLUTE MAXIMUM RATINGS Symbol VCC Parameter Supply Voltage Value Unit -0.5 to +7 V -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 V DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ± 50 mA VI DC Input Voltage VO DC Output Voltage IIK ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg Storage Temperature TL Lead Temperature (10 sec) V 300 mW -65 to +150 °C 265 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 2/7 M54HC132 RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Supply Voltage VI Input Voltage VO Output Voltage Top Operating Temperature Value Unit 2 to 6 V 0 to VCC V 0 to VCC V -55 to 125 °C DC SPECIFICATIONS Test Condition Symbol VP VN VH VOH VOL II ICC Parameter High Level Threshold Voltage Low Level Threshold Voltage Hysteresis Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Value TA = 25°C VCC (V) Min. Typ. 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 1.0 2.3 3.0 0.3 1.13 1.5 0.3 0.6 0.8 1.25 2.7 3.5 0.65 1.6 2.3 0.6 1.1 1.2 -40 to 85°C -55 to 125°C Max. Min. Max. Min. Max. 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.4 1.0 2.3 3.0 0.3 1.13 1.5 0.3 0.6 0.8 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.7 1.0 2.3 3.0 0.3 1.13 1.5 0.3 0.6 0.8 1.5 3.15 4.2 0.9 2.0 2.6 1.0 1.4 1.7 2.0 IO=-20 µA 1.9 2.0 1.9 1.9 4.5 IO=-20 µA 4.4 4.5 4.4 4.4 Unit V V V 6.0 IO=-20 µA 5.9 6.0 5.9 5.9 4.5 IO=-4.0 mA 4.18 4.31 4.13 4.10 6.0 IO=-5.2 mA 5.68 5.8 5.63 5.60 2.0 IO=-20 µA 0.0 0.1 0.1 0.1 4.5 IO=-20 µA 0.0 0.1 0.1 0.1 6.0 IO=-20 µA 0.0 0.1 0.1 0.1 4.5 IO=-4.0 mA 0.17 0.26 0.33 0.40 6.0 IO=-5.2 mA 0.18 0.26 0.33 0.40 6.0 VI = VCC or GND ± 0.1 ±1 ±1 µA 6.0 VI = VCC or GND 1 10 20 µA V V AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 Value TA = 25°C Min. Typ. Max. 30 8 7 52 13 11 75 15 13 105 21 18 -40 to 85°C -55 to 125°C Min. Min. Max. 95 19 16 130 26 22 Unit Max. 110 22 19 160 32 27 ns ns 3/7 M54HC132 CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) Value TA = 25°C Min. Typ. Max. 10 CIN Input Capacitance 5.0 5 CPD Power Dissipation Capacitance (note 1) 5.0 29 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate) TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 4/7 M54HC132 DILC-14 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 2.1 22.54 0.083 0.100 a1 3.00 3.70 0.118 0.146 a2 0.63 0.88 1.14 0.025 0.035 0.045 B 1.82 2.03 2.39 0.072 0.080 0.094 b 0.40 0.45 0.50 0.016 0.018 0.020 b1 0.20 0.254 0.30 0.008 0.010 0.012 D 18.79 19.00 19.20 0.740 0.748 0.756 e 7.36 7.62 7.87 0.290 0.300 0.310 e1 2.54 0.100 e2 15.11 15.24 15.37 0.595 0.600 0.605 e3 7.62 7.87 8.12 0.300 0.310 0.320 F 7.11 7.75 0.280 I 0.305 3.70 K 10.90 L 1.14 1.27 0.146 12.1 0.429 1.5 0.045 0.476 0.050 0.059 0016173H 5/7 M54HC132 FPC-14 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 6.75 6.91 7.06 0.266 0.272 0.278 B 9.76 9.95 10.14 0.384 0.392 0.399 C 1.49 1.95 0.059 D 0.10 0.127 0.15 0.004 0.005 0.006 E 7.50 7.62 7.75 0.295 0.300 0.305 F G 1.27 0.38 0.050 0.43 H L 0.077 0.48 0.015 0.017 6.0 0.019 0.236 18.75 22.0 0.738 0.866 M 0.38 0.015 N 4.31 0.170 G F D H 14 8 L N A 7 1 H E B 6/7 M C 016029E M54HC132 Information furnished is believed to be accurate and reliable. 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