STS01DTP06 Dual NPN-PNP complementary Bipolar transistor General features VCE(sat) hFE IC 0.35V >100 1A ■ High gain ■ Low VCE(sat) ■ Simplified circuit design ■ Reduced component count SO-8 Applications ■ Push-Pull or Totem-Pole configuration ■ MOSFET and IGBT gate driving ■ Motor, relay and solenoid driving Internal schematic diagram Description The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Order codes Part Number Marking Package Packing STS01DTP06 S01DTP06 SO-8 Tape & reel March 2006 Rev 2 1/11 www.st.com 11 Contents STS01DTP06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STS01DTP06 Electrical ratings 1 Table 1. Absolute maximum ratings Symbol Parameter Unit NPN PNP VCBO Collector-base voltage (IE = 0) 60 -60 V VCEO Collector-emitter voltage (IB = 0) 30 -30 V VEBO Emitter-base voltage (IC = 0) 5 -5 V Collector current 3 -3 A Collector peak current (tP < 5ms) 6 -6 A Base current 1 -1 A IBM Base peak current (tP < 1ms) 2 -2 A Ptot Total dissipation at T c = 25°C single 2 W Ptot Total dissipation at T c = 25°C couple 1.6 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 62.5 °C/W 78 °C/W IC ICM IB TJ Table 2. Symbol Max. operating junction temperature Thermal data Parameter Rthj-amb 1 Thermal resistance junction-ambient____M__mMax (Single operation) Rthj-amb 1 1 Value Thermal resistance junction-ambient____M__mMax (Dual operation) When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec. 3/11 Electrical characteristics 2 STS01DTP06 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol Q1-NPN transistor electrical characteristics Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 60V 0.1 µA ICEO Collector cut-off current (IB = 0) VCE = 30V 1 µA IEBO Emitter cut-off current (IC = 0) VEB = 5V 1 µA Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage VBE(sat) (1) Base-emitter saturation voltage hFE (1) DC current gain IC = 10mA 30 IC = 1A IB = 10mA IC = 2A IB = 100mA IC = 1A IB = 10mA IC = 1A VCE = 2V IC = 3A VCE = 2V V 0.35 1 0.7 V V 0.85 1.1 V Typ. Max. Unit 100 30 1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 % (Tcase = 25°C unless otherwise specified) Table 4. Symbol Q2-PNP transistor electrical characteristics Parameter Min. ICBO Collector cut-off current (IE = 0) VCB = -60V -0.1 µA ICEO Collector cut-off current (IB = 0) VCE = -30V -1 µA IEBO Emitter cut-off current (IC = 0) VEB = -5V -1 µA Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) 4/11 Test Conditions Collector-emitter saturation voltage IC = -10mA -30 IC = -1A IB = -10mA IC = -2A IB = -100mA V -0.35 -1 -0.7 V V STS01DTP06 Table 4. Symbol VBE(sat) (1) hFE (1) Q2-PNP transistor electrical characteristics Parameter Base-emitter saturation voltage DC current gain Test Conditions Min. IC = -1A IB = -10mA IC = -1A VCE = -2V IC = -3A VCE = -2V Typ. Max. Unit -0.85 -1.1 V 100 30 1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 % 2.1 Electrical characteristics (curve) Figure 1. Reverse biased area Q1 NPN Figure 2. transistor DC current gain Q1 NPN transistor Figure 3. DC current gain Q1 NPN transistor Collector-emitter saturation voltage Q1 NPN transistor Figure 4. 5/11 Electrical characteristics 6/11 STS01DTP06 Figure 5. Base-emitter saturation voltage Q1 NPN transistor Figure 6. Reverse biased area Q2 PNP transistor Figure 7. DC current gain Q2 PNP transistor Figure 8. DC current gain Q2 PNP transistor Figure 9. Collector-emitter saturation voltage Q2 PNP transistor Figure 10. Base-emitter saturation voltage Q2 PNP transistor STS01DTP06 2.2 Test circuits Figure 11. Typical application 7/11 Package mechanical data 3 STS01DTP06 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STS01DTP06 SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.244 0.050 0.6 0.157 0.050 0.023 8 (max.) 9/11 Revision history 4 STS01DTP06 Revision history Table 5. 10/11 Revision history Date Revision Changes 22-Apr-2005 1 Initial release. 22-Mar-2006 2 New template 30-Mar-2006 3 The limit of current in figure number six has been modified from 6.5A to 6A. STS01DTP06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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