STMICROELECTRONICS STS01DTP06

STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
VCE(sat)
hFE
IC
0.35V
>100
1A
■
High gain
■
Low VCE(sat)
■
Simplified circuit design
■
Reduced component count
SO-8
Applications
■
Push-Pull or Totem-Pole configuration
■
MOSFET and IGBT gate driving
■
Motor, relay and solenoid driving
Internal schematic diagram
Description
The STS01DTP06 is a Hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar techlogy. The STS01DTP06 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Order codes
Part Number
Marking
Package
Packing
STS01DTP06
S01DTP06
SO-8
Tape & reel
March 2006
Rev 2
1/11
www.st.com
11
Contents
STS01DTP06
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STS01DTP06
Electrical ratings
1
Table 1.
Absolute maximum ratings
Symbol
Parameter
Unit
NPN
PNP
VCBO
Collector-base voltage (IE = 0)
60
-60
V
VCEO
Collector-emitter voltage (IB = 0)
30
-30
V
VEBO
Emitter-base voltage (IC = 0)
5
-5
V
Collector current
3
-3
A
Collector peak current (tP < 5ms)
6
-6
A
Base current
1
-1
A
IBM
Base peak current (tP < 1ms)
2
-2
A
Ptot
Total dissipation at T c = 25°C single
2
W
Ptot
Total dissipation at T c = 25°C couple
1.6
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
62.5
°C/W
78
°C/W
IC
ICM
IB
TJ
Table 2.
Symbol
Max. operating junction temperature
Thermal data
Parameter
Rthj-amb 1 Thermal resistance junction-ambient____M__mMax
(Single operation)
Rthj-amb 1
1
Value
Thermal resistance junction-ambient____M__mMax
(Dual operation)
When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec.
3/11
Electrical characteristics
2
STS01DTP06
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Q1-NPN transistor electrical characteristics
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 60V
0.1
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 30V
1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
1
µA
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VBE(sat) (1)
Base-emitter saturation
voltage
hFE (1)
DC current gain
IC = 10mA
30
IC = 1A
IB = 10mA
IC = 2A
IB = 100mA
IC = 1A
IB = 10mA
IC = 1A
VCE = 2V
IC = 3A
VCE = 2V
V
0.35
1
0.7
V
V
0.85
1.1
V
Typ.
Max.
Unit
100
30
1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 %
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Q2-PNP transistor electrical characteristics
Parameter
Min.
ICBO
Collector cut-off current
(IE = 0)
VCB = -60V
-0.1
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = -30V
-1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -5V
-1
µA
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
VCE(sat) (1)
4/11
Test Conditions
Collector-emitter
saturation voltage
IC = -10mA
-30
IC = -1A
IB = -10mA
IC = -2A
IB = -100mA
V
-0.35
-1
-0.7
V
V
STS01DTP06
Table 4.
Symbol
VBE(sat) (1)
hFE (1)
Q2-PNP transistor electrical characteristics
Parameter
Base-emitter saturation
voltage
DC current gain
Test Conditions
Min.
IC = -1A
IB = -10mA
IC = -1A
VCE = -2V
IC = -3A
VCE = -2V
Typ.
Max.
Unit
-0.85
-1.1
V
100
30
1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 %
2.1
Electrical characteristics (curve)
Figure 1.
Reverse biased area Q1 NPN Figure 2.
transistor
DC current gain Q1 NPN
transistor
Figure 3.
DC current gain Q1 NPN
transistor
Collector-emitter saturation
voltage Q1 NPN transistor
Figure 4.
5/11
Electrical characteristics
6/11
STS01DTP06
Figure 5.
Base-emitter saturation
voltage Q1 NPN transistor
Figure 6.
Reverse biased area Q2 PNP
transistor
Figure 7.
DC current gain Q2 PNP
transistor
Figure 8.
DC current gain Q2 PNP
transistor
Figure 9.
Collector-emitter saturation
voltage Q2 PNP transistor
Figure 10. Base-emitter saturation
voltage Q2 PNP transistor
STS01DTP06
2.2
Test circuits
Figure 11. Typical application
7/11
Package mechanical data
3
STS01DTP06
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STS01DTP06
SO-8 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
c1
45 (typ.)
1.27
e
e3
3.81
0.150
F
3.8
4.0
0.14
L
0.4
1.27
0.015
M
S
0.244
0.050
0.6
0.157
0.050
0.023
8 (max.)
9/11
Revision history
4
STS01DTP06
Revision history
Table 5.
10/11
Revision history
Date
Revision
Changes
22-Apr-2005
1
Initial release.
22-Mar-2006
2
New template
30-Mar-2006
3
The limit of current in figure number six has been modified from 6.5A
to 6A.
STS01DTP06
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