U3666M Baseband Delay Line 64 ms (Improved Version of U3665M) Application In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs Description The integrated delay line circuit U3666M is suitable for all chroma decoders with baseband color-difference outputs. It is suitable for PAL-, SECAM- and NTSC-signals as well. The U3666M contains two separate delay lines for processing (R–Y)-output and (B–Y)-output separately. The delay is performed by internally switched capacitors. On-chip postfiltering avoids the need for external filter components. In the case of the U3666M, the postfilter is tuned to Bessel-characteristic. A summing circuitry combines the information of adjacent TV-lines, thus giving an interpolated sum for the PAL-system, storing preceeding lines for the SECAMsystem and providing a comb-filtered output for NTSC-signals. Due to internally generated timing, synchronization is easily done by feeding a line-frequent impulse (usually the SC-impulse) to the sync-input of the IC. Features D One line delay time, addition of delayed and D Improved power supply rejection ratio (PSRR) D No crosstalk between SECAM color non-delayed output signals D Adjustment-free application, VCO without carriers (diaphoty) external components D Comb-filtering functions for NTSC color- D Handles negative or positive color-difference difference signals input signals D Correction of phase errors in the PAL system D Improved latch-up stability "(B–Y) 14 12 "(B–Y) 11 "(R–Y) 9 VDD1 10 GND1 VRef Clamping S+H Line memory + LPF "(R–Y) 16 Shift register S+H Clamping Line memory + LPF VRef 3 MHz Bias fSC VDD2 1 SC detector GND2 Control PLL Clock generator 3 5 94 8846 SC pulse Figure 1. Block diagram TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 1 (9) Preliminary Information U3666M Ordering Information ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Pin Description ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ Extended Type Number U3666M-MDP U3666M-MFP Package DIP16 SO16 VDD2 1 16 Vi(R–Y) NC 2 15 NC GND2 3 14 Vi(B–Y) NC 4 13 NC SC 5 12 Vo(B–Y) NC 6 11 V0(R–Y) NC 7 10 GND1 NC 8 9 VDD1 Remarks Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VDD2 NC GND2 NC SC NC NC NC VDD1 GND1 Vo (R–Y) Vo (B–Y) NC Vi (B–Y) NC Vi (R–Y) Function Supply voltage for digital part Not connected Ground for digital part Not connected Sandcastle-pulse input Not connected Not connected Not connected Supply voltage for analog part Ground for analog part ±(R–Y) output signal ±(B–Y) output signal Not connected ±(B–Y) input signal Not connected ±(R–Y) input signal 95 10649 Figure 2. Connection diagram Absolute Maximum Ratings Reference point Pin 3, 10, unless otherwise specified ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Á ÁÁÁÁ ÁÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ Parameters Supply voltage (Pin 9) Supply voltage (Pin 1) Voltage on Pins 5, 11, 12, 14 and 16 Output current, (Pin 11, Pin 12) Power dissipation Storage temperature range Electrostatic protection* for input/ output pins Symbol VDD1 VDD2 Vn Iout P Tstg Min. –0.5 –0.5 –0.5 Typ. –25 Max. +7 +7 VS 20 1.1 +150 500 Unit V V V mA W °C V * MIL standard 883D, method 3015.7 machine model (all power pins connected together) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ Thermal Resistance ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ Operating Range Parameters Supply-voltage range (Pin 1, Pin 9) Ambient-temperature range Symbol Vs Tamb Value 4.5 to 5.5 –10 to +70 Unit V °C Parameters Symbol RthJA Value 80 Unit K/W Junction ambient 2 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 U3666M Electrical Characteristics VDD = 5.0 V, Tamb = 25°C, reference point, Pin 3 and Pin 10 connected together, sandcastle frequency of 15.625 kHz; unless otherwise specified Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit DC-supply Pin 1, 9 Supply voltage (analog part) Pin 9 VDD1 4.5 5.0 5.5 V Supply voltage (digital part) Pin 1 VDD2 4.5 5.0 5.5 V Supply current (analog part) Pin 9 IS1 3.5 8.0 mA Supply current (digital part) Pin 1 IS2 1 2 mA Power dissipation P 30 60 mW Color-difference input signals Pin 14, 16 Input signal (peak-to-peak value) Pin 16 Vi 0.525 1.0 V ±(R–Y) PAL and NTSC ±(B–Y) PAL and NTSC Pin 14 Vi 0.665 1.0 V ±(R–Y) SECAM Pin 16 Vi 1.05 2.0 V ±(B–Y) SECAM Pin 14 Vi 1.33 2.0 V Input resistance During clamping R14, R16 40 kW Input capacitance C14, C16 10 pF Input clamping voltage Non color input level V14 1.45 V V16 during clamping Color-difference output signals Pin 11, 12 Output signal Pin 11 Vo 1.05 V (peak-to-peak value) ±(R–Y) All standards ±(B–Y) All standards Pin 12 Vo 1.33 V Ratio of output amplitudes at V11/V12 –0.4 0 +0.4 dB equal input signals DC output voltage Pin 11, 12 V11,12 3.0 V Output resistance Pin 11, 12 R11,12 400 W Gain for PAL and NTSC Ratio Vo / Vi Gv 5.5 6.0 6.5 dB Gain for SECAM Ratio Vo / Vi Gv –0.5 0 +0.5 dB Ratio of output signals for Vi 14,16 = 1.33Vpp, V(n)/ ±0.1 dB adjacent time samples at SECAM signals, V(n+1) constant input signals Pin 11 / Pin 12 Noise voltage Vnoise 1.2 mV Vi 14,16 = 0, Rgen < 300 W (RMS value) f = 10 kHz to 1 MHz Pin 11, 12 Delay of delayed signals td 63.94 64.0 64.06 µs Delay of non-delayed signals td 65 ns Transient time of delayed 300 ns transient of SECAM ttr 550 ns signal input signal, Cload = 22 pF Pin 11, 12 Transient time of 300 ns transient of SECAM ttr 350 ns non-delayed signal input signal, Cload = 22 pF Pin 11, 12 Sandcastle-pulse input Pin 5 Sandcastle frequency fSC 14.0 15.625 17.0 kHz Top pulse voltage The leading edge of the burstV5 3 Vs+0.7 V key pulse is used for timing Internal slicing level Vslice V5–1.5 V5–1.25 V5–1.0 V Input current I5 10 µA Input capacitance C5 10 pF ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 3 (9) Preliminary Information U3666M BGP SC-impulse H-pulse Internal clamping 0.3 ms 95 10355 1.6 ms Figure 3. Timing of internal clamping No higher than VS + 0.7 V BGP 1.6 V At least 1.6 V H V 95 10226 Figure 4. Restrictions to SC pulse 4 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 U3666M +12 V 560 W 10 W 5V1 10 W 47 mF 47 mF 22 nF 22 nF "(R–Y) Chroma decoder "(B–Y) 1 9 NC 94 8848 11 1 nF Baseband delay line 14 1 nF SC pulse "(R–Y) 2,4,6,7,8,13,15 16 "(B–Y) 12 3 5 10 *) *) Figure 5. Typical application circuit *)Depends on application (5 V - or 12 V SC pulse) Baseband delay line Baseband delay line 12 V SC-impulse 5 SC-impulse 10 kW SC in 5 SC in 5V 6.8 kW 95 10354 95 10227 Figure 6. Application with 12 V SC-pulse TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 Figure 7. Application with 5 V SC-pulse 5 (9) Preliminary Information U3666M Internal Pin Circuits 14,16 5 95 10356 95 10357 Figure 8. Color-difference signal inputs Figure 10. Sandcastle-pulse input 95 10359 1,9 11,12 ÁÁ 95 10358 Figure 11. Supply voltage VDD2, VDD1 Figure 9. Color-difference signal outputs 6 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 U3666M Package Information Package DIP16 20.0 max Dimensions in mm 19.8 max 7.82 7.42 4.8 max 0.5 min 6.4 max 3.3 1.64 1.44 0.58 0.48 0.39 max 9.75 8.15 2.54 17.78 Alternative 16 15 14 13 12 11 10 9 technical drawings according to DIN specifications 96 11709 1 2 3 4 5 6 7 8 Package SO16 Dimensions in mm 94 8875 TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97 7 (9) Preliminary Information U3666M Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 8 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 10-Feb-97