TEMIC U3666M-MDP

U3666M
Baseband Delay Line 64 ms (Improved Version of U3665M)
Application
In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs
Description
The integrated delay line circuit U3666M is suitable for
all chroma decoders with baseband color-difference
outputs. It is suitable for PAL-, SECAM- and
NTSC-signals as well. The U3666M contains two
separate delay lines for processing (R–Y)-output and
(B–Y)-output separately. The delay is performed by internally switched capacitors. On-chip postfiltering avoids
the need for external filter components. In the case of the
U3666M, the postfilter is tuned to Bessel-characteristic.
A summing circuitry combines the information of
adjacent TV-lines, thus giving an interpolated sum for the
PAL-system, storing preceeding lines for the SECAMsystem and providing a comb-filtered output for
NTSC-signals. Due to internally generated timing,
synchronization is easily done by feeding a line-frequent
impulse (usually the SC-impulse) to the sync-input of
the IC.
Features
D One line delay time, addition of delayed and
D Improved power supply rejection ratio (PSRR)
D No crosstalk between SECAM color
non-delayed output signals
D Adjustment-free application, VCO without
carriers (diaphoty)
external components
D Comb-filtering functions for NTSC color-
D Handles negative or positive color-difference
difference signals
input signals
D Correction of phase errors in the PAL system
D Improved latch-up stability
"(B–Y) 14
12
"(B–Y)
11
"(R–Y)
9
VDD1
10
GND1
VRef
Clamping
S+H
Line memory
+
LPF
"(R–Y) 16
Shift register
S+H
Clamping
Line memory
+
LPF
VRef
3 MHz
Bias
fSC
VDD2
1
SC detector
GND2
Control
PLL
Clock generator
3
5
94 8846
SC pulse
Figure 1. Block diagram
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
1 (9)
Preliminary Information
U3666M
Ordering Information
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Pin Description
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Extended Type Number
U3666M-MDP
U3666M-MFP
Package
DIP16
SO16
VDD2
1
16 Vi(R–Y)
NC
2
15 NC
GND2
3
14 Vi(B–Y)
NC
4
13 NC
SC
5
12 Vo(B–Y)
NC
6
11 V0(R–Y)
NC
7
10 GND1
NC
8
9
VDD1
Remarks
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
VDD2
NC
GND2
NC
SC
NC
NC
NC
VDD1
GND1
Vo (R–Y)
Vo (B–Y)
NC
Vi (B–Y)
NC
Vi (R–Y)
Function
Supply voltage for digital part
Not connected
Ground for digital part
Not connected
Sandcastle-pulse input
Not connected
Not connected
Not connected
Supply voltage for analog part
Ground for analog part
±(R–Y) output signal
±(B–Y) output signal
Not connected
±(B–Y) input signal
Not connected
±(R–Y) input signal
95 10649
Figure 2. Connection diagram
Absolute Maximum Ratings
Reference point Pin 3, 10, unless otherwise specified
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Parameters
Supply voltage (Pin 9)
Supply voltage (Pin 1)
Voltage on Pins 5, 11, 12, 14 and 16
Output current, (Pin 11, Pin 12)
Power dissipation
Storage temperature range
Electrostatic protection* for input/ output pins
Symbol
VDD1
VDD2
Vn
Iout
P
Tstg
Min.
–0.5
–0.5
–0.5
Typ.
–25
Max.
+7
+7
VS
20
1.1
+150
500
Unit
V
V
V
mA
W
°C
V
* MIL standard 883D, method 3015.7 machine model (all power pins connected together)
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Thermal Resistance
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Operating Range
Parameters
Supply-voltage range (Pin 1, Pin 9)
Ambient-temperature range
Symbol
Vs
Tamb
Value
4.5 to 5.5
–10 to +70
Unit
V
°C
Parameters
Symbol
RthJA
Value
80
Unit
K/W
Junction ambient
2 (9)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
U3666M
Electrical Characteristics
VDD = 5.0 V, Tamb = 25°C, reference point, Pin 3 and Pin 10 connected together, sandcastle frequency of 15.625 kHz;
unless otherwise specified
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
DC-supply
Pin 1, 9
Supply voltage (analog part)
Pin 9
VDD1
4.5
5.0
5.5
V
Supply voltage (digital part)
Pin 1
VDD2
4.5
5.0
5.5
V
Supply current (analog part)
Pin 9
IS1
3.5
8.0
mA
Supply current (digital part)
Pin 1
IS2
1
2
mA
Power dissipation
P
30
60
mW
Color-difference input signals
Pin 14, 16
Input signal
(peak-to-peak value)
Pin 16
Vi
0.525
1.0
V
±(R–Y) PAL and NTSC
±(B–Y) PAL and NTSC
Pin 14
Vi
0.665
1.0
V
±(R–Y) SECAM
Pin 16
Vi
1.05
2.0
V
±(B–Y) SECAM
Pin 14
Vi
1.33
2.0
V
Input resistance
During clamping
R14, R16
40
kW
Input capacitance
C14, C16
10
pF
Input clamping voltage
Non color input level
V14
1.45
V
V16
during clamping
Color-difference output signals
Pin 11, 12
Output signal
Pin 11
Vo
1.05
V
(peak-to-peak value) ±(R–Y) All standards
±(B–Y)
All standards
Pin 12
Vo
1.33
V
Ratio of output amplitudes at
V11/V12
–0.4
0
+0.4
dB
equal input signals
DC output voltage
Pin 11, 12
V11,12
3.0
V
Output resistance
Pin 11, 12
R11,12
400
W
Gain for PAL and NTSC
Ratio Vo / Vi
Gv
5.5
6.0
6.5
dB
Gain for SECAM
Ratio Vo / Vi
Gv
–0.5
0
+0.5
dB
Ratio of output signals for
Vi 14,16 = 1.33Vpp,
V(n)/
±0.1
dB
adjacent time samples at
SECAM signals,
V(n+1)
constant input signals
Pin 11 / Pin 12
Noise voltage
Vnoise
1.2
mV
Vi 14,16 = 0, Rgen < 300 W
(RMS value)
f = 10 kHz to 1 MHz
Pin 11, 12
Delay of delayed signals
td
63.94
64.0
64.06
µs
Delay of non-delayed signals
td
65
ns
Transient time of delayed
300 ns transient of SECAM
ttr
550
ns
signal
input signal, Cload = 22 pF
Pin 11, 12
Transient time of
300 ns transient of SECAM
ttr
350
ns
non-delayed signal
input signal, Cload = 22 pF
Pin 11, 12
Sandcastle-pulse input
Pin 5
Sandcastle frequency
fSC
14.0
15.625
17.0
kHz
Top pulse voltage
The leading edge of the burstV5
3
Vs+0.7
V
key pulse is used for timing
Internal slicing level
Vslice
V5–1.5 V5–1.25 V5–1.0
V
Input current
I5
10
µA
Input capacitance
C5
10
pF
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TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
3 (9)
Preliminary Information
U3666M
BGP
SC-impulse
H-pulse
Internal clamping
0.3 ms
95 10355
1.6 ms
Figure 3. Timing of internal clamping
No higher than
VS + 0.7 V
BGP
1.6 V
At least 1.6 V
H
V
95 10226
Figure 4. Restrictions to SC pulse
4 (9)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
U3666M
+12 V
560 W
10 W
5V1
10 W
47 mF
47 mF
22 nF
22 nF
"(R–Y)
Chroma
decoder
"(B–Y)
1
9
NC
94 8848
11
1 nF
Baseband delay line
14
1 nF
SC pulse
"(R–Y)
2,4,6,7,8,13,15
16
"(B–Y)
12
3
5
10
*)
*)
Figure 5. Typical application circuit
*)Depends on application (5 V - or 12 V SC pulse)
Baseband
delay
line
Baseband
delay
line
12 V
SC-impulse
5
SC-impulse
10 kW
SC in
5
SC in
5V
6.8 kW
95 10354
95 10227
Figure 6. Application with 12 V SC-pulse
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
Figure 7. Application with 5 V SC-pulse
5 (9)
Preliminary Information
U3666M
Internal Pin Circuits
14,16
5
95 10356
95 10357
Figure 8. Color-difference signal inputs
Figure 10. Sandcastle-pulse input
95 10359
1,9
11,12
ÁÁ
95 10358
Figure 11. Supply voltage VDD2, VDD1
Figure 9. Color-difference signal outputs
6 (9)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
U3666M
Package Information
Package DIP16
20.0 max
Dimensions in mm
19.8 max
7.82
7.42
4.8 max
0.5 min
6.4 max
3.3
1.64
1.44
0.58
0.48
0.39 max
9.75
8.15
2.54
17.78
Alternative
16
15
14
13
12
11
10
9
technical drawings
according to DIN
specifications
96 11709
1
2
3
4
5
6
7
8
Package SO16
Dimensions in mm
94 8875
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97
7 (9)
Preliminary Information
U3666M
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
8 (9)
Preliminary Information
TELEFUNKEN Semiconductors
Rev. A1, 10-Feb-97