TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR (VDD = 3 V) = 5.1 V/μs (typ.) • Lower supply current than general-purpose bipolar type op amps : IDD (VDD = 3 V) = 660 μA (typ.) • The internally phase compensated operational amplifier. • Small package TC75W60FK Weight SSOP8-P-0.65 : 0.021 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Power dissipation TC75W60FU TC75W60FK Symbol Rating Unit VDD, VSS 7 V DVIN ±7 V VIN VDD to VSS V PD 250 200 mW Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC75W60FU/FK Marking (top view) TC75W60FU 8 7 6 5 Pin Connection (top view) Type name 2 3 8 Lot No. 5W60 1 TC75W60FK 7 VDD 6 5 8 OUT IN (−) IN (+) 7 6 5 5W 60 4 1 2 3 4 1 2 3 4 OUT IN (−) IN (+) VSS Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO ⎯ Input offset current IIO ⎯ II Characteristics Min Typ. Max Unit ⎯ 2 7 mV ⎯ ⎯ 1 ⎯ pA ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN ⎯ ⎯ 0.0 ⎯ 2.1 V GV ⎯ ⎯ 60 70 ⎯ dB VOH ⎯ RL = 100 kΩ 2.9 ⎯ ⎯ VOL ⎯ RL = 100 kΩ ⎯ ⎯ 0.1 Common mode rejection ratio CMRR ⎯ VIN = 0.0 to 2.1 V 54 70 ⎯ dB Suuply voltage rejection ratio SVRR ⎯ VDD = 1.8 to 7.0 V 60 70 ⎯ dB IDD ⎯ ⎯ ⎯ 660 1000 μA Isource ⎯ ⎯ 330 700 ⎯ μA Isink ⎯ ⎯ 600 1250 ⎯ μA Test Condition Min Typ. Max Unit ⎯ 2 7 mV ⎯ 1 ⎯ pA Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Supply current Source current Sink current Test Condition RS = 1 kΩ V DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit VIO ⎯ IIO ⎯ ⎯ II ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN ⎯ ⎯ 0.3 ⎯ 0.9 V GV ⎯ ⎯ ⎯ 70 ⎯ dB VOH ⎯ RL = 100 kΩ 1.7 ⎯ ⎯ VOL ⎯ RL = 100 kΩ ⎯ ⎯ 0.1 CMRR ⎯ VIN = 0.3 to 0.9 V 50 60 ⎯ dB Supply current IDD ⎯ ⎯ ⎯ 600 900 μA Source current Isource ⎯ ⎯ 300 700 ⎯ μA Isink ⎯ ⎯ 550 1150 ⎯ μA Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) maximum output voltage Common mode rejection ratio Sink current RS = 1 kΩ 2 V 2007-11-01 TC75W60FU/FK AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 5.1 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 3.7 ⎯ MHz Characteristics AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 4.0 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 3.0 ⎯ MHz Characteristics TEST CIRCUIT (1) SVRR, VIO • VDD SVRR VDD = 1.5 V : VDD = VDD1, VOUT = VOUT1 VDD = 7.0 V : VDD = VDD2, VOUT = VOUT2 RF ⎛ V 1 − V OUT 2 RS SVRR = 20 log ⎜ OUT × ⎜ V 1− V 2 R F + RS DD DD ⎝ RS VOUT RS RF • VIO ⎛ RS VDD ⎞ ⎟× VIO = ⎜⎜ V OUT − 2 ⎟⎠ RF + RS ⎝ VDD/2 (2) CMRR, CMVIN VDD • CMRR VIN = 0.0 V : VIN = VDD1, VOUT = VOUT1 VIN = 2.5 V : VIN = VDD2, VOUT = VOUT2 RF RS ⎛ V 1 − V OUT 2 RS CMRR = 20 log ⎜ OUT × ⎜ R 1 − 2 V V F + RS IN IN ⎝ VOUT ⎞ ⎟ ⎟ ⎠ RS RF VIN ⎞ ⎟ ⎟ ⎠ • CMVIN VDD/2 3 2007-11-01 TC75W60FU/FK (3) VOH VDD • VOH VDD − 0.05 V 2 VIN2 = VDD + 0.05 V 2 RL VOH VIN1 = VIN1 VIN2 (4) VOL VDD • VOL VDD + 0.05 V 2 VIN2 = VDD − 0.05 V 2 RL VIN1 = VOL VIN1 (5) VIN2 IDD VDD M IDD VDD/2 (6) Isource (7) Isink VDD VDD M M VDD 2 4 VDD − 0.1 V 2 2007-11-01 TC75W60FU/FK IDD – VDD Isink – VDD 2.0 1000 (mA) Ta = 25°C Isink Ta = −40°C 600 1.6 1.2 Sink current Supply current IDD (μA) Ta = 85°C 800 400 200 Ta = −40°C Ta = 25°C Ta = 85°C 0.8 0.4 VSS = GND VSS = GND VIN = VDD/2 0 0 1 2 3 4 Supply voltage 5 VDD 6 0 0 7 1 (V) 2 3 Supply voltage VOL – Isink (V) (V) Ta = 85°C 7 (V) Ta = 85°C VOL 1.6 2 Ta = 25°C 1.2 “L” level output voltage VOL “L” level output voltage VDD 6 3 Ta = −40°C 0.8 0.4 VDD = 1.8 V VSS = GND 0 0 0.5 1.0 Sink current Isink Ta = 25°C Ta = −40°C 1 VDD = 3 V VSS = GND 0 0 1.5 0.5 (mA) 1.0 Sink current VOL – Isink Isink 1.5 (mA) Isource – VDD 1.5 5 VSS = GND Isource (mA) VDD = 5 V (V) Ta = 85°C 4 Ta = 25°C 3 Ta = −40°C Source current VOL 5 VOL – Isink 2.0 “L” level output voltage 4 2 1 0 0 0.5 Sink current 1.0 Isink 1.0 Ta = 25°C Ta = −40°C 0.5 VSS = GND 0 0 1.5 (mA) Ta = 85°C 1 2 3 Supply voltage 5 4 5 VDD 6 7 (V) 2007-11-01 TC75W60FU/FK VOH – Isource VOH – Isource 3 VOH 2.5 1.6 1.2 “H” level output voltage “H” level output voltage VOH (V) (V) 2.0 0.8 Ta = −40°C Ta = 85°C Ta = 25°C 0.4 VDD = 1.8 V VSS = GND 0 0 0.5 Source current Ta = −40°C Ta = 85°C Ta = 25°C VDD = 3 V 0 0 1 VSS = GND 0.5 Source current Isource (mA) VOH – Isource Isource (mA) VOH – RL 2 VOH VOH (V) (V) 5 Ta = −40°C “H” level output voltage “H” level output voltage 1 Ta = 85°C 2.5 Ta = 25°C VDD = 5 V VSS = GND 0 0 0.5 Source current 1 Ta = −40°C Ta = 25°C VDD = 1.8 V VSS = GND 0 100 1 Ta = 85°C Isource (mA) 1k 10 k Load resistance VOH – RL 100 k RL 1M (Ω) VOH – RL 5 (V) (V) 3 VOH VOH 2.5 Ta = −40°C “H” level output voltage “H” level output voltage Ta = 85°C Ta = 25°C VDD = 3 V 0 100 VSS = GND 1k 10 k Load resistance 100 k RL Ta = 85°C Ta = −40°C 2.5 Ta = 25°C VDD = 5 V VSS = GND 0 100 1M (Ω) 1k 10 k Load resistance 6 100 k RL 1M (Ω) 2007-11-01 TC75W60FU/FK Pulse response (Rise) Pulse response 1.1 (Fall) 1.1 Input 0.9 0.9 Ta = 85°C (V) Ta = −40°C 0.5 Ta = 25°C Output Ta = −40°C 0.5 Voltage Voltage Output 0.7 (V) 0.7 0.3 0.1 Ta = 25°C 0.3 Input 0.1 0 0 VDD = 1.8 V VSS = GND 0 100 200 time 300 Ta = 85°C 400 VDD = 1.8 V VSS = GND 0 100 (ns) Pulse response 200 time (Rise) 400 (ns) Pulse response 3 300 (Fall) 3 VDD = 3 V VSS = GND Input 2 2 (V) (V) Ta = 85°C Ta = −40°C Voltage Voltage Output Ta = 25°C 1 Ta = −40°C 1 Ta = 25°C Ta = 85°C Output 0 0 200 0 VDD = 3 V VSS = GND 400 time 600 Input 800 0 200 (ns) Pulse response 400 time (Rise) 800 (ns) Pulse response 6 600 (Fall) 6 VDD = 5 V VSS = GND Input 4 (V) Ta = −40°C Ta = 25°C Voltage Voltage (V) 4 Ta = 85°C 2 Output 2 Ta = −40°C Ta = 25°C Ta = 85°C Output 0 0 VDD = 5 V VSS = GND 0 0.4 0.8 time 1.2 Input 1.6 0 (μs) 0.4 0.8 time 7 1.2 1.6 (μs) 2007-11-01 TC75W60FU/FK GV – f PD – Ta 120 Note) 300 VDD = 3 V 80 PD 200 40 Power dissipation (dB) Ta = 25°C 100 GV Voltage gain SM8 (mW) VSS = GND 0 10 100 1k 10 k Frequency f 100 k 1M US8 0 −40 10 M (Hz) 0 40 Ambient temperature 80 Ta 120 (°C) Note): These power dissipation curves are given by measurement of only IC on the air and, in general, it become higher when mounted on PCB. Since the power dissipation depends on mounted condition, please be sure to design. 8 2007-11-01 TC75W60FU/FK Package Dimensions Weight: 0.021 g (typ.) 9 2007-11-01 TC75W60FU/FK Package Dimensions Weight: 0.01 g (typ.) 10 2007-11-01 TC75W60FU/FK RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-11-01