TSC HERAF1606G

HERAF1601G - HERAF1608G
Isolated 16.0 AMPS. Glass Passivated
High Efficient Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.406(10.3)
.390(9.90)
.124(3.16)
.118(3.00)
.134(3.4)DIA
.113(3.0)DIA
Features
.272(6.9)
.248(6.3)
.606(15.5)
.583(14.8)
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
.063(1.6)
MAX
.161(4.1)
.146(3.7)
Mechanical Data
.112(2.85)
.100(2.55)
Cases: ITO-220AC molded plastic
Epoxy: UL 94V0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C/10 seconds 0.25”,(6.35mm) from case.
Mounting torque : 5 in – 1bs. max.
Weight: 2.24 grams
.110(2.8)
.098(2.5)
.055(1.4)
.043(1.1)
.030(0.76)
.020(0.50)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol HERAF HERAF HERAF
Type Number
HERAF HERAF HERAF HERAF HERAF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TC =100 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed
on Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@16.0A
Maximum DC Reverse Current
@TA=25 oC at Rated DC Blocking Voltage
@ TA=125 oC
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes:
VRRM
VRMS
VDC
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
600
420
600
800 1000
560 700
800 1000
Units
V
V
V
I(AV)
16
A
IFSM
250
A
VF
1.0
IR
Trr
Cj
RθJC
1.3
1.7
10
400
50
150
80
110
2.0
TJ
-65 to +150
TSTG
-65 to +150
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Version: A06
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
16
12
8
4
0
0
50
100
150
o
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
Tj=25 0C
200
100
10
Tj=25 0C
1
0.1
8.3ms Single Half Sine Wave
JEDEC Method
150
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
100
FIG.5- TYPICAL FORWARD CHARACTERISTICS
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
250
Tj=25 0C
HE
RA
F1
60
1G
~H
HE
ER
RA
AF
F1
16
60
05
6G
G
~H
ER
AF
16
08
G
200
150
100
50
2
5
10
20
10
3.0
1.0
0.3
0.1
0.03
0
1
30
F1
1
RA
0
60
1G
~H
ER
AF
HE
16
04
RA
G
F1
H
60
ER
6G
AF
~H
16
ER
05
AF
G
16
08
G
100
50
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE.(pF)
Tj=125 0C
HE
PEAK FORWARD SURGE CURRENT. (A)
CASE TEMPERATURE. ( C)
INSTANTANEOUS REVERSE CURRENT. ( A)
20
INSTANTANEOUS FORWARD CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
RATINGS AND CHARACTERISTIC CURVES (HERAF1601G THRU HERAF1608G)
50
100
200
500
1000
0.01
0.4
REVERSE VOLTAGE. (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
(-)
DUT
PULSE
GENERATOR
(NOTE 2)
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06