HERF1001G - HERF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AB Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Case: ITO-220AB molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/ 0.25” (6.35mm) from case for 10 seconds. Mounting torque: 5 in – 1bs. max. Weight: 2.24 grams Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @T C = 100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 5.0A Maximum DC Reverse Current @T A=25 oC at Rated DC Blocking Voltage @ T A=125 oC Symbol HERF HERF HERF HERF HERF HERF HERF HERF Units 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G V RRM V RMS V DC 200 140 200 300 210 300 400 280 400 600 420 600 800 1000 560 700 800 1000 V V V 10 A IFSM 125 A VF 1.0 1.3 Trr Cj R θJC TJ 1.7 10 400 IR Typical Junction Capacitance ( Note 2 ) Operating Temperature Range 100 70 100 I(AV) Maximum Reverse Recovery Time ( Note 1 ) Typical Thermal Resistance (Note 3) 50 35 50 50 60 80 40 3.0 -65 to +150 -65 to +150 Storage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. V uA uA nS pF o C/W o C o C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERF1001G THRU HERF1008G) FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 8 INSTANTANEOUS REVERSE CURRENT. ( A) 6 4 2 0 0 100 50 150 o FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 125 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 100 50 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 240 200 CAPACITANCE.(pF) Tj=25 0C 1 FIG.5- TYPICAL FORWARD CHARACTERISTICS 75 25 Tj=75 0C 0.1 100 Tj=125 0C 10 8.3ms Single Half Sine Wave JEDEC Method INSTANTANEOUS FORWARD CURRENT. (A) PEAK FORWARD SURGE CURRENT. (A) LEAD TEMPERATURE. ( C) 100 160 120 HE RF 100 1G 80 40 HER ~H ER 06G ~HE RF1 2 5 30 10 F ER 10 20 50 100 200 500 05 G H 1 0.3 0.1 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0.01 0.4 G 10 G 08 10 RF E H G~ 06 10 F R HE 3 0.03 008 0 1 F10 05G F10 HE RF 10 01 G ~H ER F1 00 4G AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 10 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) 1000 REVERSE VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (+) 50Vdc (approx) (-) (-) DUT PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06