SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208 .404(10.3) .386(9.80) .335(8.51) .320(8.13) 45 0 .013(0.33) .0088(0.22) .130(3.30) .120(3.05) Mechanical Data DBS .205(5.2) .195(5.0) .047(1.20) .040(1.02) .255(6.5) .245(6.2) .060(1.53) .040(1.02) .013(0.33) .003(0.076) Dimensions in inches and (millimeters) Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Maximum Ratings and Electrical Characteristics o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SDB SDB SDB SDB Type Number 12 13 14 15 20 14 20 30 21 30 40 28 40 50 35 50 SDB SDB SDB SDB 16 19 110 115 Units SDBS SDBS SDBS SDBS SDBS SDBS SDBS SDBS 12 13 14 15 16 19 110 115 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL (See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A VRRM VRMS VDC at Rated DC Blocking Voltage @ TA=100 oC Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) 100 70 100 150 105 150 V V V 1.0 A IFSM 30 A VF 0.5 IR 0.75 0.4 10 Cj R θJL TJ 5.0 50 0.80 -65 to +125 -65 to +150 -65 to +150 Storage Temperature Range TSTG Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.5” x 0.5” (12 mm x 12mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 0.95 V 0.1 0.5 28 88 RθJA Operating Temperature Range 90 63 90 I(AV) o Maximum DC Reverse Current @ TA =25 C 60 42 60 mA mA pF o C /W o C C o Version: A06 RATINGS AND CHARACTERISTIC CURVES (SDB(S)12 THRU SDB(S)115) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 50 RESISTIVE OR INDUCTIVE LOAD SDBS15-SDBS115 SDBS12- SDBS14 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 1.0 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method 40 30 20 10 0 50 60 70 80 90 100 110 120 130 140 150 160 1 170 10 NUMBER OF CYCLES AT 60Hz o LEAD TEMPERATURE. ( C) 100 FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 FIG.3- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT. (mA) 50 INSTANTANEOUS FORWARD CURRENT. (A) Tj=25 0C 10.0 SDBS15-SDBS16 SDBS12-SDBS14 1 SDBS19-SDBS115 0.1 SDBS12-SDBS14 100 Tj=100 0C 10 SDBS15-SDBS16 1 SDBS19-SDBS115 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE Tj=25 0C SDBS12-SDBS14 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 40 SDBS15-SDBS115 60 80 100 120 140 1.6 FORWARD VOLTAGE. (V) FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS FIG.5- TYPICAL JUNCTION CAPACITANCE Tj=25 0C f=1.0MHz Vsig=50mVp-p 100 TRANSIENT THERMAL IMPEDANCE. (OC/W) 100 400 JUNCTION CAPACITANCE.(pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 0.01 10 0 10 1 0.1 .1 1.0 10 REVERSE VOLTAGE. (V) 100 0.01 0.1 1 10 T, PULSE DURATION. (sec) Version: A06 100