SK22A thru SK220A ® Pb SK22A thru SK220A Pb Free Plating Product 2.0 Ampere Surface Mount Schottky Barrier Rectifier Diodes SMA/DO-214AC Unit: inch (mm) Features .114(2.90) .098(2.50) .062(1.60) .047(1.20) Mechanical Data .181(4.60) .157(4.00) .012(.305) .006(.152) .096(2.44) For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C / 10 seconds at terminals .078(2.00) .060(1.52) .030(0.76) Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram .008(.203) .002(.051) .208(5.28) .188(4.80) Maximum Ratings and Electrical Characteristics o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SK SK SK SK Type Number SK SK SK SK 22A 23A 24A 25A 26A 29A 210A 220A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 2.0A o Maximum DC Reverse Current @ TA =25 C o at Rated DC Blocking Voltage @ TA =125 C Non-repetitive Peak Reverse Avalanche o Energy L=40mH Tj=25 C max prior to Surge, Inductive load Switched off Typical Junction Capacitance Typical Thermal Resistance ( Note 2 ) VRRM VRMS VDC 30 21 30 40 28 40 50 35 50 60 42 60 90 63 90 100 200 70 140 100 200 V V V I(AV) 2.0 A IFSM 50 A VF 0.5 IR 10 0.7 0.5 5.0 Cj Operating Temperature Range Storage Temperature Range TSTG 0.85 0.1 2.0 0.95 V mA mA 20 ERSM R θJA TJ Notes: 20 14 20 Units 10 mJ 50 pF C/W o C o C o 88 -65 to +125 -65 to +150 -65 to +150 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.2” x 0.2”(5.0mm x 5.0mm) Copper Pad Areas. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ SK22A thru SK220A ® FIG. 1- MAXIMUM FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVELOAD SK26A-SK220A 1.5 SK22A-SK25A 1.0 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm)COPPER PAD AREAS 50 PEAK FORWARD SURGE CURRENT.(A) AVERAGE FORWARD CURRENT.(A) 2.0 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 40 30 20 10 0 0 50 60 70 80 90 100 110 120 130 LEAD TEMP ERATURE.( C) 140 150 1 160 10 NUMBER OF CYCLES AT 60Hz 100 FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT.(mA) A 24 SK A 26 2A K 2 S SK A0A 25 21 K K S S AA 29 K S K S 0 10 22 INSTANTANEOUS FORWARD CURRENT.(A) 50 1 0.1 10 O TJ=125 C SK22A-24A O C J=125 -26A T S K2 5 A 1 0.1 O O C 5C 75 TJ=2 TJ= 24A A A 5 O 2 1 C 2 SK2 25 9A TJ= SK2 A O 6 2 5C 25A J=2 SK A T 05A 2 1 2 29A SK 0.01 PULSE WIDTH=300 s 1% DUTY CYCLE 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 FORWARD VOLTAGE.(V) 1.3 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) 1.5 FIG. 5- TYPICAL JUNCTION CAPACITANCE SK2 2AS K26 A TRANSCIENT THERMAL IMPEDANCE, ( oC/ W) 400 JUNCTION CAPACITANCE.(pF) O O C 75 5C J=7 TJ= 4A A T 2 6 2 22A 25A SK SK O 25 C J=1 A T 5 1 9A-2 SK2 Tj=25oC f=1.0MHz Vsig=50mVp-p 100 S K2 9ASK 2 20 10 0.1 A 1 10 REVERSE VOLTAGE.(V) 100 100 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION, (sec) Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/