SK22A thru SK220A SK22A thru SK220A

SK22A thru SK220A
®
Pb
SK22A thru SK220A
Pb Free Plating Product
2.0 Ampere Surface Mount Schottky Barrier Rectifier Diodes
SMA/DO-214AC
Unit: inch (mm)
Features
.114(2.90)
.098(2.50)
.062(1.60)
.047(1.20)
Mechanical Data
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.096(2.44)
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
.078(2.00)
.060(1.52)
.030(0.76)
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SK SK SK SK
Type Number
SK SK SK SK
22A 23A 24A 25A 26A 29A 210A 220A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1) @ 2.0A
o
Maximum DC Reverse Current
@ TA =25 C
o
at Rated DC Blocking Voltage @ TA =125 C
Non-repetitive Peak Reverse Avalanche
o
Energy L=40mH Tj=25 C max prior to Surge,
Inductive load Switched off
Typical Junction Capacitance
Typical Thermal Resistance ( Note 2 )
VRRM
VRMS
VDC
30
21
30
40
28
40
50
35
50
60
42
60
90
63
90
100 200
70 140
100 200
V
V
V
I(AV)
2.0
A
IFSM
50
A
VF
0.5
IR
10
0.7
0.5
5.0
Cj
Operating Temperature Range
Storage Temperature Range
TSTG
0.85
0.1
2.0
0.95
V
mA
mA
20
ERSM
R θJA
TJ
Notes:
20
14
20
Units
10
mJ
50
pF
C/W
o
C
o
C
o
88
-65 to +125
-65 to +150
-65 to +150
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2”(5.0mm x 5.0mm) Copper Pad Areas.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
SK22A thru SK220A
®
FIG. 1- MAXIMUM FORWARD CURRENT DERATING
CURVE
RESISTIVE OR
INDUCTIVELOAD
SK26A-SK220A
1.5
SK22A-SK25A
1.0
0.5
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm)COPPER PAD AREAS
50
PEAK FORWARD SURGE CURRENT.(A)
AVERAGE FORWARD CURRENT.(A)
2.0
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
AT RATED TL
40
30
20
10
0
0
50
60
70
80
90 100 110
120 130
LEAD TEMP ERATURE.( C)
140
150
1
160
10
NUMBER OF CYCLES AT 60Hz
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT.(mA)
A
24
SK
A
26
2A
K
2
S
SK
A0A
25
21
K
K
S
S
AA
29
K
S
K
S
0
10
22
INSTANTANEOUS FORWARD CURRENT.(A)
50
1
0.1
10
O
TJ=125 C
SK22A-24A
O
C
J=125
-26A T
S K2 5 A
1
0.1
O
O
C
5C
75
TJ=2
TJ=
24A
A
A
5
O
2
1
C
2
SK2
25
9A
TJ=
SK2
A
O
6
2
5C
25A
J=2
SK
A T
05A
2
1
2
29A
SK
0.01
PULSE WIDTH=300 s
1% DUTY CYCLE
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
FORWARD VOLTAGE.(V)
1.3
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
1.5
FIG. 5- TYPICAL JUNCTION CAPACITANCE
SK2
2AS
K26
A
TRANSCIENT THERMAL IMPEDANCE, ( oC/ W)
400
JUNCTION CAPACITANCE.(pF)
O
O
C
75
5C
J=7
TJ=
4A
A T
2
6
2
22A
25A
SK
SK
O
25 C
J=1
A T
5
1
9A-2
SK2
Tj=25oC
f=1.0MHz
Vsig=50mVp-p
100
S K2
9ASK 2
20
10
0.1
A
1
10
REVERSE VOLTAGE.(V)
100
100
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
10
1
0.1
0.01
0.1
1
10
100
PULSE DURATION, (sec)
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/