TSC5302D High Voltage NPN Transistor with Diode TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation ● No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. ● Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor with Diode Ordering Information Part No. TSC5302DCP RO TSC5302DCH C5 Package Packing TO-252 TO-251 2.5Kpcs / 13” Reel 70pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 400V 10 V V Collector Current IC 2 A Collector Peak Current (tp <5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tp <5ms) IBM 2 A o Total Dissipation @ Tc ≤ 25 C TO-251 TO-252 Maximum Operating Junction Temperature Ptot TJ Storage Temperature Range TSTG 1/6 25 1.5 W +150 o -65 to +150 o C C Version: A07 TSC5302D High Voltage NPN Transistor with Diode Thermal Performance Parameter Symbol Junction to Case Thermal Resistance Limit RӨJC Junction to Ambient Thermal Resistance RӨJA Unit 6.25 o 100 o C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Turn On Time Storage Time Fall Time a a a Symbol Min Typ Max Unit IC = 1mA, IB = 0 BVCBO 700 -- -- V IC = 10mA, IE = 0 IE = 1mA, IC = 0 BVCEO BVEBO 400 10 --- --- V V VCB = 700V, IE = 0 VEB = 9V, IC = 0 ICBO IEBO --- --- 1 1 uA uA IC =0.5A, IB =0.1A IC =1A, IB =0.25A VCE(SAT)1 VCE(SAT)2 --- --- 0.5 1.1 V IC =0.5A, IB =0.1A IC =1A, IB =0.25A VCE =5V, IC =10mA VBE(SAT)1 VBE(SAT)2 --- --- 1.1 1.2 V hFE 1 10 -- -- VCE =5V, IC =400mA hFE 2 10 -- 30 VCE =5V, IC =1A hFE 3 5 -- -- tON -- 0.15 0.3 uS tSTG -- 0.5 0.9 uS tf -- 0.2 0.4 uS VCC =250V, IC =1A, IB1=IB2 =0.2A, tp =25uS Duty Cycle<1% Diode Fall Time IC =1A tF -- -- 800 uS Forward Voltage Drop IC =1A Vf -- -- 1.4 V Notes: a. Pulsed duration = 300uS, duty cycle ≤2% 2/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating 3/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode SOT-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.40 5.60 0.213 0.220 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.75 0.85 0.030 0.033 0.55 0.65 0.022 0.026 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode SOT-251 Mechanical Drawing DIM A A1 b C D D1 E E1 e F L L1 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.20 2.40 0.087 0.094 1.10 1.30 0.043 0.051 0.55 0.75 0.022 0.030 0.48 0.58 0.019 0.023 6.50 7.00 0.256 0.276 5.50 5.70 0.217 0.224 6.40 6.60 0.252 0.260 5.20 5.40 0.205 0.213 2.25 2.35 0.089 0.093 0.48 0.58 0.019 0.023 7.80 8.20 0.307 0.323 1.00 1.30 0.039 0.051 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode Notice Specifications of the products displayed herein are subject to change without notice. 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