UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882S TO-92 *Pb-free plating product number: 2SB772SL PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SB772S-T92-B 2SB772SL-T92-B 2SB772S-T92-K 2SB772SL-T92-K www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing TO-92 TO-92 Tape Box Bulk 1 QW-R201-023.B 2SB772S PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current DC Collector Current Base Current Power Dissipation Operating Temperature Storage Temperature SYMBOL VCBO VCEO VEBO ICM IC IB PD TJ TSTG RATINGS -40 -30 -5 -7 -3 -0.6 0.5 +150 -40 ~ +150 UNIT V V V A A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current SYMBOL ICBO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW <300µs, Duty Cycle<2% TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN TYP 30 100 200 150 -0.3 -1.0 80 45 MAX -1000 -1000 400 -0.5 -2.0 UNIT nA nA V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 2 QW-R201-023.B 2SB772S TYPICAL CHARACTERICS Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics 1.6 1.2 -IB=6mA -IB=5mA 0.8 -IB=4mA 100 S/ b 50 l im -IB=3mA 0.4 lim it e d n tio - Ic Derating (%) -IB=9mA -IB=8mA -IB=7mA ipa ss Di -IB=2mA d it e -Collector current, Ic (A) 150 -IB=1mA 0 0 0 4 8 12 16 20 -50 0 50 100 150 200 Case Temperature, Tc (℃ ) -Collector-Emitter voltage (V) Fig.4 Collector Output capacitance Fig.3 Power Derating 3 10 Output Capacitance(pF) Power Dissipation(W) 12 8 4 IE=0 f=1MHz 2 10 1 10 0 0 10 -50 0 50 100 150 200 10 Case Temperature, Tc (℃) 0 -1 10 Ic(max),Pulse 1 10 Ic(max),DC -Collector current, Ic (A) VCE=5V 2 10 IB=8mA 1 10 -2 -1 10 10 0 1 10 10 1m S 0 -1 10 10 -2 Collector current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw mS mS 0. 1 10 10 -3 10 Fig.6 Safe Operating Area 3 10 0 10 -2 10 -Collector-Base Voltage(v) Fig.5 Current gain bandwidth product Current gainbandwidth product, f T (MHz) ■ PNP EPITAXIAL SILICON TRANSISTOR 10 0 10 1 2 10 Collector-Emitter Voltage 3 QW-R201-023.B 2SB772S PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS(cont.) Fig.7 DC current gain Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage (mV) DC current Gain, H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 4 10 VBE (sat) 3 10 2 10 VCE(sat) 1 10 0 10 -Collector current, Ic (mA) 10 0 1 10 2 10 3 10 4 10 -Collector current, Ic (mA) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R201-023.B