UNISONIC TECHNOLOGIES CO.,LTD. MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 1 2 MARKING (MMBTA44) SOT-23 * Pb-free plating product number: MMBTA44L/MMBTA45L 3D PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA45-AE3-R MMBTA45L-AE3-R Package Packing SOT-23 SOT-23 Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD. 1 QW-R206-007.B MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL MMBTA44 MMBTA45 MMBTA44 MMBTA45 VCBO VCEO Emitter-Base Voltage Collector Current Power Dissipation RATINGS 500 400 400 350 6 300 350 1.5 +150 -40 ~ +150 VEBO Ic Ta=25°C Tc=25°C PD Junction Temperature Storage Temperature TJ TSTG UNIT V V V mA mW W °C °C ELECTRICAL CHARACTERISTICS (Tj =25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown MMBTA44 Voltage MMBTA45 Collector-Emitter Breakdown MMBTA44 Voltage MMBTA45 Emitter-Base Breakdown Voltage SYMBOL BVCBO Ic=100µA, IB=0 BVCEO Ic=1mA, IB=0 BVEBO IE=100µA, Ic=0 Ic=1mA, IB=0.1mA Ic=10mA, IB=1mA Ic=50mA, IB=5mA Ic=10mA, IB=1mA VCB=400V, IE =0 VCB=320V, IE =0 VCE =400V, IB=0 VCE =320V, IB=0 VEB=4V, Ic=0 VCE =10V, Ic=1mA VCE =10V, Ic=10mA VCE =10V, Ic=50mA VCE =10V, Ic=100mA VCE =20V, Ic=10mA f=100MHz VCB=20V, IE =0, f=1MHz Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage MMBTA44 Collector Cut-off Current MMBTA45 MMBTA44 Collector Cut-off Current MMBTA45 Emitter Cut-off Current VBE(sat) DC Current Gain(Note) Current Gain Bandwidth Product Output Capacitance Note: Pulse test: PW <300µs, Duty Cycle<2% ICBO ICES IEBO hFE fT Cob UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN 500 400 400 350 6 TYP MAX V V V 0.4 0.5 0.75 0.75 0.1 0.1 0.5 0.5 0.1 40 50 45 40 UNIT V V µA µA µA 240 50 MHz 7 pF 2 QW-R206-007.B MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Turn -on switching times 101 VCE=10V 140 120 100 Ti me (μs) DC Current Gain, H FE DC current gain 80 60 40 20 0 -20 -40 VCE =150V Ic /IB =10 Ta=25℃ VBE( OFF)=4V 100 Tf Td -1 10 100 101 102 103 104 101 100 Collector Current, I C (mA) Collector Current, IC (mA) Turn - off switching times Capacitance 2 10 3 VCE =150V Ic/IB =10 Ta = 25℃ Ca pa citan ce(p F) Ti me (μs) 10 1 10 ts 0 10 102 tF -1 102 C ib 101 Cob 0 10 10 0 10 10 1 2 10 Collector Current, I C( mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 -1 100 101 3 102 10 Collector Voltage ( V) 3 QW-R206-007.B MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR Collector saturation region ON voltage 1.0 Coll ect or-Emitter Volt ag e (V) 0.8 Volta ge(V) 0.5 Ta =25℃ VBE (sat ) , Ic/IB =10 0.6 VBE (ON) , VCE =10V 0.4 VCE (sat ), Ic/IB=10 0.2 0 -1 10 0.4 Ic =1mA Ic=10mA Ic=50mA 0.3 0.2 0.1 Ta=25℃ 0 1 0 10 2 10 10 3 101 10 102 Collector Current, IC ( mA) 103 104 105 Base Current, IB (μA) TYPICAL CHARACTERISTICS(cont.) 10 2 104 VCE =10V f=10MHz Ta=25℃ 1 -1 10 0 10 1 10 2 10 3 10 Collector current, IC ( mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1s 102 0.1ms ℃ -1 10 1ms 103 5 =2 Ta 10 0 Valid Duty Cycle<10% 5℃ =2 Colle ctor curre nt, Ic (mA) 10 Safe operating area Ta Small sig nal curre nt g ain, H FE High frequency current gain 101 100 MPSA44 0 10 1 10 2 10 103 10 4 Collector voltage (V) 4 QW-R206-007.B MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 QW-R206-007.B