UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Ic PT Tj Tstg 20 12 3 100 200 150 -65 ~ +150 V V V mA mW °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain bandwidth Product Feed-Back Capacitance Noise figure ICBO IEBO hFE fT Cre NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=7mA, f=1.0GHz MIN TYP 50 MAX UNIT 1.0 1.0 300 µA µA 7 1.0 2.0 GHz pF dB CLASSIFICATION OF hFE RANK RANGE UTC A 50-160 B 160-240 C 240-300 UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-024,B UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR TYPICAL CHARACTERISTICS (TA=25°C) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R206-024,B UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R206-024,B