UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation (Ta=25°C) Junction Temperature Storage Temperature BVCBO BVCEO BVEBO Ic Ptot Tj Tstg MIN MAX UNIT -50 160 160 5 100 1.25 150 150 V V V mA W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL TEST CONDITIONS MIN BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob IC=10µA IC=1mA IE=10µA VCB=140V VCE=5V, Ic=10mA VCE=5V, Ic=1mA Ic=30mA, IB=3mA VCE=5V, Ic=10mA VCE=5V,Ic=10mA VCB=10V, f=1MHz 160 160 5 TYP MAX 10 320 60 30 2 1.5 145 3.8 UNIT V V V µA V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE UTC B 60-120 C 100-200 D 160-320 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-008,A UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-008,A UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR Current Gain & Collector Current Saturation Voltage &Collector Current 1000 Saturation Voltage(mV) hFE 1000 VCE =5V 100 10 0.1 1 10 100 100 10 1 1000 10 100 1000 Collector Current(mA) Collector Current (mA) On Voltage & Collector Current Cutoff Frequency &Collector Current 1000 Cutoff Frequency (MHz) 10000 On Voltage (mV) VCE(sat) @Ic=10IB 1000 VBE(on) @VcE=5V 100 0.1 1 10 100 100 VCE =5V 10 1 1000 10 100 1000 Collector Current(mA) Collector Current (mA) Capacitance& Reverse-Biased Voltage Safe Operating Area 10 Collector Current (mA) Capacitance (pF) 10000 Cob 1000 100 PT =1ms PT =100ms PT =1s 10 1 0.1 1 10 100 Reverse Biased Voltage(V) UTC 1000 1 1 10 100 1000 Forward Voltage (V) UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-008,A UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R204-008,A