UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 1 SIP-3 1 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD1616-x-AB3-R 2SD1616L-x-AB3-R 2SD1616-x-G03-K 2SD1616L-x-G03-K 2SD1616-x-T92-B 2SD1616L-x-T92-B 2SD1616-x-T92-K 2SD1616L-x-T92-K 2SD1616-x-T9S-K 2SD1616L-x-T9S-K 2SD1616A-x-AB3-R 2SD1616AL-x-AB3-R 2SD1616A-x-G03-K 2SD1616AL-x-G03-K 2SD1616A-x-T92-B 2SD1616AL-x-T92-B 2SD1616A-x-T92-K 2SD1616AL-x-T92-K 2SD1616A-x-T9S-K 2SD1616AL-x-T9S-K Package SOT-89 SIP-3 TO-92 TO-92 TO-92SP SOT-89 SIP-3 TO-92 TO-92 TO-92SP Pin Assignment 1 2 3 B C E E C B E C B E C B E C B B C E E C B E C B E C B E C B Packing Tape Reel Bulk Tape Box Bulk Bulk Tape Reel Bulk Tape Box Bulk Bulk 2SD1616L-x-AB3-T (1)Packing Type (3)Rank (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) AB3: SOT-89, G03: SIP-3, T92: TO-92, T 9S: TO-92S (3) x: refer to Classification of hFE1 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn (2)Package Type www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-008,C 2SD1616/A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT 60 Collector to Base Voltage VCBO V 120 50 Collector to Emitter Voltage VCEO V 60 Emitter to Base Voltage VEBO 6 V DC IC 1 A Collector Current 2 A Pulse(Note2) ICM Total Power Dissipation PC 750 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≤10ms, Duty cycle<50% 2SD1616 2SD1616A 2SD1616 2SD1616A ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base Emitter On Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL VCE (SAT) VBE (SAT) VBE (ON) ICBO IEBO hFE1 DC Current Gain hFE2 fT Cob tON tSTG tF Transition Frequency Output Capacitance Turn On Time Storage Time Fall Time TEST CONDITIONS IC=1A, IB=50mA IC=1A, IB=50mA VCE =2V, IC =50mA VCB=60V VEB= 6V 2SD1616 VCE =2V, IC =100mA 2SD1616A VCE =2V, IC=1A VCE =2V, IC =100mA VCB =10V, f =1MHz VCE =10V, IC =100mA IB1 = -IB2 =10mA VBE(OFF) = -2 ~ -3V MIN 600 TYP 0.15 0.9 640 135 135 81 100 MAX UNIT 0.3 V 1.2 V 700 mV 100 nA 100 nA 600 400 160 MHz pF μs μs μs 19 0.07 0.95 0.07 CLASSIFICATION OF hFE1 RANK hFE1 Y 135 ~ 270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw G 200 ~ 400 L 300 ~ 600 2 of 4 QW-R201-008,C 2SD1616/A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Current Gain-Bandwidth Product Collector Output Capacitance 1000 1000 Capacitance, C ob (pF) Current Gain-Bandwidth Product, fT (MHz) IE=0 f=1.0MHz 500 300 100 50 30 10 5 3 1 3 5 10 30 50 100 VCE=2V 500 300 100 50 30 10 5 3 1 0.01 300 0.03 Collector-Base Voltage, VCB (V) Static Characteristic I B=200μA I B=150μA 40 I B=100μA 20 IB= 4 .5 0.8 Collector Current, IC (A) Collector Current , IC (mA) mA I B=5.0mA 4. 0m A 10 I B=250μA 60 1 10 IB =3.5mA IB=3.0mA IB=2.5mA 0.6 I B=2.0mA IB=1.5mA 0.4 IB=1.0mA 0.2 IB=0.5mA I B=50μA 0 3 5 Static Characteristic I B=300μA 80 0.3 IB = 100 0.1 Collector Current, IC (A) 2 4 6 8 10 Collector-Emitter Voltage , VCE (V) 0 0.2 0.4 0.6 0.8 10 Collector-Emitter Voltage, VCE (V) Switching Time 10 Time, tON, tSTG, tF (μs) 5 3 VCC=10V IC=10×IB1= -10×IB2 1 t STG 0.5 0.3 0.1 tF 0.05 0.03 0.01 0.001 0.003 tON 0.01 0.030.05 0.1 0.30.5 1 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-008,C 2SD1616/A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage DC Current Gain VCE=2V 500 DC Current Gain, hFE 300 100 50 30 10 5 3 10 Saturation Voltage, VCE (SAT), VBE (SAT), (V) 1000 5 IC=20IB 3 VBE (SAT) 1 0.5 0.3 0.1 VCE (SAT) 0.05 0.03 1 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 0.01 10 0.030.05 0.1 0.3 0.5 1 3 5 10 Collector Current, IC (A) Collector Current, IC (A) Safe Operating Area Power Derating 0.8 10 5 1 0.5 0.3 0.6 pw=1ms 10ms Power Dissipation, PD (W) 20 0m s 0.1 0.05 0.03 2SD1616A D C 2SD1616 Collector Current, IC (A) 3 0.4 0.2 0.01 1 3 5 10 30 50 100 300 Collector-Emitter Voltage, VCE (V) 0 25 50 75 100 125 150 175 200 Ambient Temperature, Ta (℃) U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-008,C