UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES 1 * High Speed Switching * Wide SOA TO-220 1 TO-220F *Pb-free plating product number: 2SC5027EL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC5027E-x-TA3-T 2SC5027EL-x-TA3-T 2SC5027E-x-TF3-T 2SC5027EL-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SC5027EL-x-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Rank (3) x: refer to Classification of hFE1 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-030,B 2SC5027E NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Tc = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 750 V Collector-Emitter Voltage VCEO 700 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Power Dissipation PD 50 W ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEO(SUS) L=2mH, Clamped ICBO VCB=750V, IE=0 IEBO VEB=5V, IC=0 hFE1 VCE=5V, IC=0.2A hFE 2 VCE=5V, IC=1A VCE (SAT) IC=1.5A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tS RL=200Ω tF MIN 750 700 7 TYP MAX 700 UNIT V V V V 10 8 10 10 40 μA μA 2 1.5 V V pF MHz μs μs μs 60 15 0.5 3 0.3 CLASSIFICATION of hFE1 CLASSIFICATION RANGE N 10 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 15 ~ 30 O 20 ~ 40 2 of 4 QW-R203-030,B 2SC5027E NPN SILICON TRANSISTOR ■ TYPICAL CHARACTERISTICS DC Current Gain Static Characteristic 4.0 1000 VCE=5V Collector Current, I C (A) 3.6 DC Current Gain, hFE 3.2 2.8 IB =250 mA IB =200 mA IB =150 mA IB =100 mA IB =80mA IB =60mA IB =50mA IB =40mA IB =30mA IB =20mA 2.4 2.0 1.6 1.2 0.8 0.4 0.0 IB =10mA IB =0mA 0 1 2 3 4 5 6 7 8 9 100 10 1 0.01 10 100us 1ms 0.1 Collectoer-Emitter Voltage, VCE (V) 1 10 Collector Current, IC (A) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter on Voltage 4.0 10 VCE=5V Collector Current, Ic (A) Saturation Voltage, VBE(SAT) , VCE(SAT) (V) Ic=5IB 1 0.1 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.01 0.01 100us 1ms 0.1 1 0.0 0.0 10 Collector Current, IC (A) 0.2 0.4 1.2 100 Vcc =400 V 5.IB 1= - 2.5.I B2=Ic 1ms 1 1 s 0μ 10 0.1 IcMAX.(Continuous ) s 1m 1 DC Collector Current, Ic (A) IcMAX.(Pulse) 10 s m 10 Time, tO N, tSTG, t F (μs) 1.0 Safe Operating Area 10 0.1 0.01 1E-s 10 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.8 Base-Emitter Voltage, VBE (V) Switching Time 0.01 0.1 0.6 1 10 100 1000 10000 Collector-Emitter Voltage, VCE (V) 3 of 4 QW-R203-030,B 2SC5027E NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Reverse Operating Area 80 100 IB2=-0.3A Power Dissipation, PD (W) Collector Current, Ic (A) Power Derating 10 1 0. 1 70 60 50 40 30 20 10 0.0 1 100us 10 100 1ms 1000 0 10000 Collector-Emitter Voltage, VCE (V) 0 25 50 75 100 125 150 175 Case Temperature, TC (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-030,B