UTC-IC MMBT4401L-AE3-R

UNISONIC TECHNOLOGIES CO., LTD
MMBT4401
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
3
The UTC MMBT4401 is designed for use as a medium power
amplifier and switch requiring collector currents up to 500mA.
2
1
SOT-23
*Pb-free plating product number: MMBT4401L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT4401-AE3-R
MMBT4401L-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBT4401L-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
2X
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Copyright © 2005 Unisonic Technologies Co., Ltd
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MMBT4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING* (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current-Continuous
IC
600
mA
350
mW
Total Device Dissipation
PD
mW/℃
Derate above 25℃
2.8
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25℃, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
SYMBOL
θJA
RATING
357
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (note)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS (note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
SYMBOL
BVCBO
BVCEO
BVEBO
ICEX
IBL
MIN
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
60
40
6
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE(SAT1) IC=150mA, IB=15mA
VCE(SAT2) IC=500mA, IB=50mA
VBE(SAT1) IC=150mA, IB=15mA
VBE(SAT2) IC=500mA, IB=50mA
20
40
80
100
40
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Ccb
Ceb
hie
hre
hfe
hoe
Delay Time
tD
Rise Time
tR
Storage Time
tS
Fall Time
TEST CONDITIONS
tF
VCE=10V, IC=20mA, f=100MHz
VCB=5V, IE=0, f=140kHz
VBE=0.5V, IC=0, f=140kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, IC=150mA
IB1= IB2=15mA
0.75
TYP
MAX
V
V
V
µA
µA
300
0.4
0.75
0.95
1.2
250
1
0.1
40
1
UNIT
V
V
V
V
MHz
pF
pF
kΩ
-4
×10
6.5
30
15
8
500
30
µmhos
15
ns
20
ns
225
ns
30
ns
Note: Pulse test: PulseWidth≤300µs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT4401
NPN SILICON TRANSISTOR
TEST CIRCUIT
30V
200Ω
16V
0
1KΩ
≤220ns
500Ω
Figure1. Saturated Turn-On Switching Timer
-1.5V 6V
1k
Note:BVEBO =5V
30V
0
≤220ns
37Ω
1KΩ
50Ω
Figure2. Saturated Turn-Off Switching Timer
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MMBT4401
NPN SILICON TRANSISTOR
Typical Pulsed Current Gain
vs Collector Current
Typical Pulsed Current Gain, hFE
500
VCE =5V
400
125℃
300
200
25℃
100
-40℃
0
0.1 0.3 1 3 10 30 100 300
Collector Current, IC (mA)
Collector-Emitter Voltage, VCESAT (V)
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage
vs Collector Current
0.4
β=10
0.3
125℃
0.2
25℃
0.1
-40℃
1
β=10
1
-40℃
0.8
25℃
125℃
0.6
0.4
1
10
100
Collector Current, I C (mA)
100
VCB=40V
10
1
0.1
500
Base-Emitter On Voltage
vs Collector Current
1
VCE =5V
-40℃
0.8
25℃
0.6
125℃
0.4
0.2
0.1
1
10
Collector Current, I C (mA)
25
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
Capacitance (pF)
Collector Current, ICBO (nA)
500
Collector-Cutoff Current
vs Ambient Temperature
500
Base-Emitter OnVoltage, VBEON (V)
Base-Emitter Voltage, VBESAT (V)
Base-Emitter Saturation Voltage
vs Collector Current
10
100
Collector Current, IC (mA)
f=1MHz
16
Cte
12
8
Cob
4
25
50
75
100 125 150
Ambient Temperature, T A(℃)
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0.1
1
10
Reverse Bias Voltage (V)
100
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
400
Turn On and Turn Off Times
vs Collector Current
400
IC
I B1=I B2= 10
320
I B1=I B2=
320
Time (ns)
240
160
80
240
80
t off
Power Dissipation vs
Ambient Temperature
Char.Relative To Voltage At
I C=10mA
8
SOT-23
0.25
25
Char.Relative To Voltage at TA=25℃
VCE =10V
I C=10mA
f=1kHz
1.6
1.2
hre
hie
hfe
hoe
0.8
0.4
0
0
40
60
80 100
20
Ambient Temperature, TA (°C)
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6
4
VCE =10V
T A=25℃
f=1kHz
hoe
hre
2
0
75 100 125 150
50
Temperature (℃)
Common Emitter Characteristics
2
100
1000
Collector Current, I C (mA)
Common Emitter Characteristics
0.5
2.4
0
10
100
1000
Collector Current, IC (mA)
0.75
0
tR
tF
tD
Char.Relative To Voltage at VCE=10V
Power Dissipation, PD (W)
1
tS
160
ton
0
10
IC
10
VCC =25V
VCC =25V
Time (ns)
Switching Times
vs Collector Current
0
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0
hfe
hie
30 40 50
10
20
Collector Current, IC (mA)
60
Common Emitter Characteristics
T A=25℃
I C=10mA
f=1kHz
hfe
hie
hre
hoe
5
10 15 20 25 30
Collector Voltage, VCE (V)
35
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MMBT4401
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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