UNISONIC TECHNOLOGIES CO., LTD 2SC4027 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS 1 FEATURES TO-220 * High voltage and large current capacity. * Fast switching time. 1 TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC4027L-x-TA3-T 2SC4027G-x-TA3-T 2SC4027L-x-TN3-R 2SC4027G-x-TN3-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tube Tape Reel 1 of 5 QW-R209-018.C 2SC4027 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) RATINGS UNIT 180 V 160 V 6 V 1.5 A 2.5 A 2 TO-220 W TA=25°C TO-252 1 Collector Dissipation PC TO-220 65 TC=25°C W TO-252 15 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time SYMBOL VCBO VCEO VEBO IC ICP SYMBOL BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) ICBO IEBO hFE1 hFE2 fT COB TON TSTG tF TEST CONDITIONS IC=10A, IE=0 IC =1mA, RBE=∞ IE=10μA, IC =0 IC =500mA, IB=50mA IC =500mA, IB=50mA VCB=120V, IE=0 VEB=4V, I IC =0 VCE=5V, IC =100mA VCE=5V, IC =10mA VCE=10V, IC =50mA VCB=-10V, f=1MHz See specified Test Circuit MIN 180 160 6 100 80 TYP MAX UNIT V V V 0.13 0.45 V 0.85 1.2 V 1.0 μA 1.0 μA 400 120 12 60 1.2 80 MHz pF μs μs μs CLASSIFICATION OF hFE1 RANK RANGE R 100~200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw S 140~280 T 200~400 2 of 5 QW-R209-018.C 2SC4027 NPN SILICON TRANSISTOR SWITCHING TIME TEST CIRCUIT INPUT PW=20µs D.C.≤1% 50Ω IB1 VR RL 14kΩ IB2 + 100µF -5V OUTPUT RB + 470µF 100V 10IB1= -10IB2=Ic=0.7A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-018.C 2SC4027 TYPICAL CHARACTERISTICS Collector Current vs. Collector to Emitter Voltage 1.2 10mA 5mA 0.8 0.6 2mA 0.4 1mA 0.2 0 A 20mA 1.0 IB=0 0 1 2 3 4 0.8 1.0mA TA=75°C TA=25°C TA=-25°C 0.8 0.4 0 0 0.1 1.0 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 40 10 30 50 20 Collector to Emitter Voltage, VCE (V) VCE=5V 100 25°C 0.01 -25°C 0.1 1.0 Collector Current, Ic (A) Gain Bandwidth Product vs. Collector Current VCE=10V 10 0.01 0 TA=75°C 10 0.2 0.4 0.6 0.8 1.2 1.0 Base to Emitter Voltage, VBE (V) 100 0.5mA IB=0 DC Current vs. Collector Current DC Current Gain, hFE 1.2 2.0mA 1.5mA 0.2 1000 100 Output Capacitance, Cob (pF) Collector Current, Ic (A) 1.6 3.0mA 2.5mA 0.4 Collector to Emitter Voltage, VCE (V) Collector Current vs. Base to Emitter Voltage VCE=5V 3.5mA 0.6 0 5 0m 40mA 50mA m 30 A 1.4 Collector Current, Ic (A) Collector Current, Ic (A) 1.6 1.0 Collector Current vs. Collector to Emitter Voltage 4.5mA 4.0mA 5. 1.8 Gain Bandwidth Product, fT (MHz) NPN SILICON TRANSISTOR Output Capacitance vs. Collector to Base Voltage f=1MHz 10 1.0 10 100 Collector to Base Voltage, VCB (V) 4 of 5 QW-R209-018.C 2SC4027 TYPICAL CHARACTERISTICS(Cont.) Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage, VCE(SAT) (V) 1000 TA=75°C TA=25°C TA=-25°C 100 Collector Current vs. Collector to Emitter Voltage ICP=2.5A 1m s I =1.5A C s 0m 10 ms 10 C D 1.0 (T =2 =2 5° C) ) C TA 5° ati on ( A op er n io 0.1 at er op DC One pulse Tc =25°C 1.0 10 100 Collector to Emitter Voltage, VCE(V) Collector to Emitter Saturation Voltage vs. Collector Current Ic/IB=10 1.0 TA=-25°C 25°C 75°C 0.1 1.0 Collector Current, Ic (A) 0.01 0.01 10 0.01 0.1 1.0 Collector Current, Ic (A) Collector Dissipation vs. Ambient Temperature 16 Collector Dissipation, Pc (W) Collector to Emitter Saturation Voltage, VCE(SAT) (V) Ic/IB=10 Collector Current, Ic (A) NPN SILICON TRANSISTOR 14 12 10 8 6 4 No heat sink 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, TA(°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-018.C