UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES TO-92 * Collector current up to 1.5A * Collector-Emitter voltage up to 25 V * complimentary to UTC HE8551 *Pb-free plating product number: HE8051L ORDERING INFORMATION Order Number Normal Lead Free Plating HE8051-x-T92-B HE8051L-x-T92-B HE8051-x-T92-K HE8051L-x-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk HE8051L-x-T92-B (1)Packing Type (1) B: Tape Box, K: Bulk (2)Package Type (2) T92: TO-92 (3)Rank (3) x: refer to Classification of hFE2 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-046.B HE8051 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation (Ta=25℃C) PC 1 W Collector Current IC 1.5 A ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=100µA, IC=0 Collector Cut-Off Current ICBO VCB=35V, IE=0 Emitter Cut-Off Current IEBO VEB=6V, IC=0 hFE1 VCE=1V, IC=5mA hFE2 VCE=1V, IC=100mA DC Current Gain VCE=1V, IC=800mA hFE3 Collector-Emitter Saturation Voltage VCE(SAT) IC=800mA, IB=80mA Base-Emitter Saturation Voltage VBE(SAT) IC=800mA, IB=80mA Base-Emitter Voltage VBE VCE=1V, IC=10mA Current Gain Bandwidth Product fT VCE=10V, IC=50mA Output Capacitance Cob VCB=10V, IE=0, f=1MHz MIN 40 25 6 TYP MAX 100 100 45 85 40 135 160 110 UNIT V V V nA nA 500 0.5 1.2 1.0 100 9.0 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 250-500 2 of 4 QW-R201-046.B HE8051 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Fig. 1 Static Characteristics I B=3.0mA IB=2.5mA 0.4 I B=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA I B=0.5mA 0.1 0 0 102 101 Fig. 3 Base-Emitter On Voltage Saturation Voltage, VBE & VCE (mV) Collector Current, IC (mA) VCE=1V 102 101 100 0.2 VCE=1V 100 -1 10 0.4 0.8 1.2 1.6 2.0 Collector-Emitter Voltage, VCE ( V) 103 0.4 0.6 0.8 1.0 1.2 Base-Emitter Voltage, VBE (V) Fig. 5 Current Gain-Bandwidth Product 103 100 101 102 Collector Current, IC (mA) 103 Fig. 4 Saturation Voltage 104 I C=10·IB VBE(SAT) 103 102 VCE(SAT) 101 -1 10 10 0 101 102 Collector Current, IC (mA) 103 Fig. 6 Collector Output Capacitance 3 10 VCE=10V Capacitance, C ob (pF) Current Gain-Bandwidth Product, fT (MHz) Fig. 2 DC Current Gain 103 DC Current Gain, hFE Collector Current, IC (mA) 0.5 2 10 101 f=1MHz IE=0 1 10 0 0 10 100 2 10 1 2 10 10 Collector Current, I C (mA) 10 3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 100 101 102 103 Collector-Base Voltage, VCB (V) 3 of 4 QW-R201-046.B HE8051 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-046.B