Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 23.5% ACPR @ 885 kHz Offset — - 48 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2600- 2700 MHz, 20 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S27085HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S27085HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 85 W CW Case Temperature 76°C, 20 W CW RθJC 0.50 0.56 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6S27085HR3 MRF6S27085HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) — 0.21 0.3 Vdc Crss — 2.8 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. N - CDMA, f = 2660 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 14 15.5 17 dB Drain Efficiency ηD 21 23.5 — % ACPR — - 48 - 45 dBc IRL — - 13 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S27085HR3 MRF6S27085HSR3 2 RF Device Data Freescale Semiconductor L1 B1 VBIAS + + C11 C10 B2 C9 C8 C3 C4 C5 + + C6 C7 VSUPPLY R1 Z9 Z1 RF INPUT Z2 Z3 Z4 Z5 Z6 Z7 Z16 C2 Z8 C1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 RF OUTPUT DUT 0.672″ x 0.081″ Microstrip 0.050″ x 0.250″ Microstrip 0.288″ x 0.081″ Microstrip 0.200″ x 0.480″ Microstrip 0.270″ x 0.172″ Microstrip 0.260″ x 0.810″ Microstrip 0.366″ x 0.490″ Microstrip 0.083″ x 0.490″ Microstrip 0.091″ x 0.753″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.287″ x 0.753″ Microstrip 0.220″ x 0.384″ Microstrip 0.122″ x 0.580″ Microstrip 0.266″ x 0.148″ Microstrip 0.130″ x 0.425″ Microstrip 0.380″ x 0.081″ Microstrip 0.703″ x 0.081″ Microstrip Arlon GX - 0300- 5022, 0.030″, εr = 2.5 Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead, Surface Mount 2508051107Y0 Fair- Rite B2 Ferrite Bead, Surface Mount 2743019447 Fair- Rite C1, C2 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC C3 3.6 pF Chip Capacitor ATC100B3R6CT500XT ATC C4 10 μF, 50 V Chip Capacitor GRM55DR61H106KA88B Murata C5, C8 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C6 47 μF, 50 V Electrolytic Capacitor EMVK500ADA470MF80G United Chemi - Con C7 330 μF, 63 V Electrolytic Capacitor EKMG630ELL331MJ20S United Chemi - Con C9 0.01 μF Chip Capacitor C1825C103J1RAC Kemet C10 22 μF, 25 V Tantalum Capacitor T491D226K025AT Kemet C11 47 μF, 16 V Tantalum Capacitor T491D476K016AT Kemet L1 15 nH, Chip Inductor L0603150GGW AVX R1 3.3 W, 1/3 W Chip Resistor CRCW12103R30FKEA Vishay MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 3 C7 C5 C11 C10 B2 C4 R1 C3 C6 B1* L1* C8* C9* C2 CUT OUT AREA C1 MRF6S27085 Rev. 3 * Components stacked Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout MRF6S27085HR3 MRF6S27085HSR3 4 RF Device Data Freescale Semiconductor 24 23 15.6 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% 15.4 Probability (CCDF) 22 Gps −42 IRL −46 15.2 15 −50 ACPR 14.8 −54 ALT1 14.6 −58 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) ηD 16 VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 900 mA, Single−Carrier N−CDMA 15.8 ACPR (dBc), ALT1 (dBc) 25 16.2 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −10 −12 −14 −16 −18 −20 −22 −24 −26 f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 15 14.8 Gps 1.2288 MHz Channel Bandwidth 34 PAR = 9.8 dB @ 0.01% 32 Probability (CCDF) 14.6 14.4 −32 IRL −36 14.2 14 ACPR −40 13.8 −44 ALT1 −48 13.6 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 −10 −12 −14 −16 −18 −20 −22 −24 −26 IRL, INPUT RETURN LOSS (dB) 38 VDD = 28 Vdc, Pout = 45 W (Avg.) IDQ = 900 mA, Single−Carrier N−CDMA 36 ηD ACPR (dBc), ALT1 (dBc) 15.2 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg. f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg. 18 IDQ = 1340 mA 17 Gps, POWER GAIN (dB) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 1240 mA 16 900 mA 15 675 mA 14 13 440 mA 12 VDD = 28 Vdc f1 = 2643.75 MHz, f2 = 2646.25 MHz Two−Tone Measurements 2.5 MHz Tone Spacing 10 1 100 300 −30 VDD = 28 Vdc f1 = 2643.75 MHz, f2 = 2646.25 MHz Two−Tone Measurements 2.5 MHz Tone Spacing 1340 mA IDQ = 440 mA −40 1240 mA −50 900 mA −60 675 mA 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 56 VDD = 28 Vdc, Pout = 85 W (PEP), IDQ = 900 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2645 MHz 55 Pout, OUTPUT POWER (dBm) −10 −20 −30 3rd Order −40 5th Order −50 7th Order −60 0.1 P3dB = 51.72 dBm (148.54 W) Ideal 54 53 P1dB = 51 dBm (126.74 W) 52 Actual 51 50 49 VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2645 MHz 48 47 46 1 100 10 30 32 31 33 34 35 36 37 38 39 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 45 40 35 40 −30 ACPR VDD = 28 Vdc, IDQ = 900 mA, f = 2645 MHz Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −35 ηD −40 −45 ALT1 30 −50 25 −55 20 Gps 15 −60 10 −65 ACPR (dBc), ALT1 (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 0 −70 100 5 10 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 20 40 15 35 12.5 30 10 25 7.5 20 5 15 2.5 ηD VDD = 28 Vdc, IDQ = 900 mA f = 2645 MHz 0 10 10 5 100 15 Gps, POWER GAIN (dB) Gps ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17.5 16 45 32 V 14 28 V 13 VDD = 24 V 12 IDQ = 900 mA f = 2645 MHz 11 1 10 100 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power MRF6S27085HR3 MRF6S27085HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 20 W Avg., and ηD = 23.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −70 −80 −90 0.0001 0 2 4 6 −60 8 10 1.2288 MHz Channel BW ................................................ .. .. . .. ............. .. ... .. .. +ALT1 in 12.5 kHz −ALT1 in 12.5 kHz ... . . Integrated BW Integrated BW .. .. . .. ... . .. . ...... ....................... ... .......... .... ... . . .. . . . . ................ ........ ... . . ............... ............ ........ .. .............. ......... .. . ......... .... . . . . . . .......... . . ................ .............. . . .. . .. . .... . .. .... . ............. −ACPR in 30 kHz +ACPR in 30 kHz . . . ... .. . . . . . . . . . .................... . ..... ...... Integrated BW Integrated BW ............... .. ..... ...... ............... ................... −100 PEAK−TO−AVERAGE (dB) Figure 13. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 7 Zsource f = 2700 MHz Zload f = 2600 MHz f = 2600 MHz f = 2700 MHz Zo = 10 Ω VDD = 28 Vdc, IDQ = 900 mA, Pout = 20 W Avg. f MHz Zsource Ω Zload Ω 2600 8.55 - j5.42 5.86 - j4.34 2610 8.31 - j5.30 5.69 - j4.26 2620 8.21 - j5.10 5.64 - j4.15 2630 8.21 - j4.85 5.67 - j4.00 2640 8.26 - j4.57 5.72 - j3.83 2645 8.40 - j4.43 5.80 - j3.75 2650 2660 8.44 - j4.32 8.78 - j4.29 5.86 - j3.70 6.10 - j3.72 2670 8.94 - j4.59 6.19 - j4.00 2680 8.88 - j5.01 6.07 - j4.36 2690 8.57 - j5.18 5.80 - j4.48 2700 8.36 - j5.10 5.71 - j4.47 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S27085HR3 MRF6S27085HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N M T A B M M M ccc M T A M aaa M T A M (LID) B S (LID) ccc H R (INSULATOR) M T A B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M (INSULATOR) B M C F E A T A SEATING PLANE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF6S27085HR3 INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF6S27085HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S27085HR3 MRF6S27085HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 3 Dec. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Changed minimum drain efficiency specification from 22% to 21% to match production test limits, Table 4, Functional Tests, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6S27085HR3 MRF6S27085HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005 - 2006, 2008. All rights reserved. MRF6S27085HR3 MRF6S27085HSR3 Document RF DeviceNumber: Data MRF6S27085H Rev. 3, 12/2008 Freescale Semiconductor 11