Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S21140HR3 MRF6S21140HSR3 2110--2170 MHz, 30 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF6S21140HR3 CASE 465C--02, STYLE 1 NI--880S MRF6S21140HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 75°C, 30 W CW RθJC 0.35 0.38 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6S21140HR3 MRF6S21140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 2 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 15.5 17.5 dB Drain Efficiency ηD 26 27.5 — % Intermodulation Distortion IM3 — --37 --35 dBc ACPR — --41 --38 dBc IRL — --15 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21140HR3 MRF6S21140HSR3 2 RF Device Data Freescale Semiconductor Z6 R1 VBIAS VSUPPLY R2 C5 C4 C3 C10 Z5 C12 + C16 C13 R3 RF INPUT C17 Z1 Z2 Z3 Z4 C1 Z8 Z9 Z10 Z11 DUT C19 C2 C6 C18 C9 Z12 Z13 RF OUTPUT C8 C7 Z7 C11 Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.250″ x 0.083″ Microstrip 1.177″ x 0.083″ Microstrip 0.443″ x 0.083″ Microstrip 0.276″ x 0.787″ Microstrip 0.786″ x 0.083″ Microstrip (quarter wave length for bias purpose) 0.833″ x 0.083″ Microstrip (quarter wave length for supply purpose) Z8 Z9 Z10 Z11, Z12 Z13 PCB C14 C15 0.531″ x 1.000″ Microstrip 0.308″ x 0.083″ Microstrip 0.987″ x 0.083″ Microstrip 0.070″ x 0.220″ Microstrip 0.160″ x 0.083″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3, C8, C9, C10, C11 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C2 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C4 220 nF Chip Capacitor VJ1812Y22YKXCAT Vishay C5, C12, C13, C14, C15 10 μF Chip Capacitors C5750X5R1H106MT TDK C6, C19 0.2 pF Chip Capacitors ATC100B0R2BT500XT ATC C7 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C16 220 μF, 63 V Electrolytic Capacitor, Radial EMVY630ATR221MKE0S Nippon Chemi--Con C17, C18 0.1 pF Chip Capacitors ATC100B0R1BT500XT ATC R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKTA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKTA Vishay MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 3 R2 VGS R1 VDD C10 C5 C4 C3 C16 C12 C13 C17 C1 C19 C2 CUT OUT AREA R3 C6 C7 C9 C8 C18 C14 C15 C11 MRF6S21140H Rev 0 Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout MRF6S21140HR3 MRF6S21140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 28 Vdc, Pout = 30 W (Avg.), 15.4 IDQ = 1200 mA, 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, 15.3 PAR = 8.5 dB @ 0.01% Probability (CCDF) 26 Gps --32 IRL 15.2 --36 IM3 ACPR --40 15.1 15 2060 28 ηD 2080 2100 2120 2140 2160 2180 2200 --44 2220 --12 --15 --18 --21 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 15.5 ηD, DRAIN EFFICIENCY (%) 30 IM3 (dBc), ACPR (dBc) 15.6 f, FREQUENCY (MHz) Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 30 Watts Avg. 15 14.7 14.6 14.5 Gps 38 IRL --24 IM3 --27 ACPR 2080 2100 2120 2140 2160 2180 2200 --30 --33 2220 --12 --15 --18 --21 IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 60 W (Avg.), IDQ = 1200 mA, 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.8 14.4 2060 40 ηD IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 14.9 ηD, DRAIN EFFICIENCY (%) 42 f, FREQUENCY (MHz) Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 60 Watts Avg. 17 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 1500 mA 16 Gps, POWER GAIN (dB) --20 IDQ = 1800 mA 1200 mA 15 900 mA 14 600 mA 13 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing 12 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing --25 --30 IDQ = 600 mA --35 1800 mA --40 --45 1500 mA --50 1200 mA 900 mA --55 --60 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 5 58 VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz Pout, OUTPUT POWER (dBm) --20 57 3rd Order --30 5th Order --40 --50 7th Order Ideal 56 P3dB = 52.6 dBm (180 W) 55 54 P1dB = 52 dBm (158.5 W) 53 Actual 52 51 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 50 49 --60 0.1 25 20 38 40 44 42 TWO--TONE SPACING (MHz) Figure 8. Pulsed CW Output Power versus Input Power 15 25_C --30_C --40 --45 85_C 85_C 25_C --50 ACPR --30_C 0 10 18 --25 85_C --30 25_C IM3 --30_C --35 Gps 5 1 36 Figure 7. Intermodulation Distortion Products versus Tone Spacing TC = -- 30_C 10 34 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1200 mA 25_C f1 = 2135 MHz, f2 = 2145 MHz 2--Carrier W--CDMA, 10 MHz Carrier 85_C Spacing. 3.84 MHz Channel Bandwidth. PAR = 8.5 dB ηD @ 0.01% Probability (CCDF) 30 48 32 100 10 VDD = 28 Vdc IDQ = 1200 mA 17 f = 2140 MHz IM3 (dBc), ACPR (dBc) 35 1 60 25_C 85_C TC = --30_C 25_C Gps 15 --60 12 30 85_C 14 13 50 40 16 --55 100 --30_C 20 ηD ηD, DRAIN EFFICIENCY (%) --10 Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 10 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) CW Figure 9. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power 0 1000 16 Gps, POWER GAIN (dB) 15 14 32 V 28 V 13 12 VDD = 24 V 11 IDQ = 1200 mA f = 2140 MHz 10 9 0 50 100 150 200 250 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6S21140HR3 MRF6S21140HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 30 W Avg., and ηD = 27.5%. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Figure 12. MTTF versus Junction Temperature W--CDMA TEST SIGNAL 100 +20 10 0 --10 1 (dB) PROBABILITY (%) 3.84 MHz Channel BW +30 0.1 --20 --30 --40 0.01 --50 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 --70 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --80 --25 --20 --60 8 10 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single--Carrier Test Signal --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 7 f = 2200 MHz Zload* Zo = 25 Ω f = 2080 MHz f = 2200 MHz Zsource f = 2080 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 30 W Avg. f MHz Zsource Ω Zload Ω 2080 7.53 -- j10.99 1.40 -- j3.03 2110 7.57 -- j10.67 1.37 -- j2.78 2140 7.58 -- j10.23 1.34 -- j2.52 2170 7.51 -- j9.73 1.32 -- j2.28 2200 7.44 -- j9.32 1.31 -- j2.06 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21140HR3 MRF6S21140HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 9 MRF6S21140HR3 MRF6S21140HSR3 10 RF Device Data Freescale Semiconductor MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 11 MRF6S21140HR3 MRF6S21140HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 May 2007 Description • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet as functionality is standard, p. 1 • Added “Optimized for Doherty Applications” bullet to Features section, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 5 Feb. 2010 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Added On Characteristic VDS(on) Min value, p. 2 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 13 MRF6S21140HR3 MRF6S21140HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004--2007, 2010. All rights reserved. MRF6S21140HR3 MRF6S21140HSR3 Document Number: MRF6S21140H Rev. 5, 2/2010 14 RF Device Data Freescale Semiconductor