Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc • Integrated ESD Protection • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power 945 MHz, 45 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 177 1.18 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.85 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF9045NR1 1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) 3 3.7 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.22 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 4 — S Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 70 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 38 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.7 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 19 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 38 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 14 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 19 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — - 13 — dB On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Off Characteristics MRF9045NR1 2 RF Device Data Freescale Semiconductor B2 + C6 C7 + C15 C14 L1 L2 C9 C1 Z2 Z3 Z4 Z5 Z6 Z8 DUT Z7 Z9 Z10 C8 C2 B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6, C15, C16 C10 C11 C12 C17 L1, L2 Z1 Z2 Z12 C13 Z11 C10 C11 + C3 Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors 2.7 pF Chip Capacitors 3.9 pF Chip Capacitor 10 pF Chip Capacitors 10 μF, 35 V Tantalum Surface Mount Capacitors 2.2 pF Chip Capacitor 4.7 pF Chip Capacitor 1.2 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitor 12.5 nH Inductors 0.20″ x 0.08″ Microstrip 0.57″ x 0.12″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 0.14″ 0.47″ 0.16″ 0.18″ 0.56″ 0.33″ 0.14″ 0.36″ 1.01″ 0.15″ 0.29″ x 0.32″ x 0.32″ x 0.32″ x 0.62″ x 0.62″ x 0.32″ x 0.32″ x 0.08″ x 0.08″ x 0.08″ x 0.08″ C12 Microstrip Microstrip x 0.62″ Taper Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Figure 1. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Schematic C6 C17 Vbias Vsupply B1 B2 C7 C1 C2 C3 Ground C4 WB2 A1 C15 C16 C14 L2 C5 WB1 L1 C9 C8 A2 C10 C11 C12 C13 MRF9045MR1 Ground Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Component Layout VDD C17 RF OUTPUT Z13 C4 CUT OUT AREA NOT RECOMMENDED FOR NEW DESIGN C5 RF INPUT Z1 + C16 NOT RECOMMENDED FOR NEW DESIGN B1 VGG MRF9045NR1 RF Device Data Freescale Semiconductor 3 B1 + B2 C7 C8 C5 C1 Z2 Z3 Z4 Z5 Z6 C2 B1 B2 C1, C8, C13, C14 C2 C3 C4 C5, C6, C9, C10 C7, C15, C16 C11 C12 C17 L1, L2 WB1, WB2 + C16 + VDD C17 L2 Z7 C3 C4 C9 Z8 DUT Z9 Z10 Z11 Z12 C11 C10 C6 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 3.6 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitors 7.5 pF Chip Capacitor 0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim 220 μF Electrolytic Chip Capacitor 12.5 nH Surface Mount Inductors 10 mil Brass Wear Blocks Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board C13 RF OUTPUT Z13 C12 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.215″ x 0.270″ Microstrip 0.315″ x 0.270″ Microstrip 0.160″ x 0.270″ x 0.520″ Taper 0.285″ x 0.520″ Microstrip 0.140″ x 0.270″ Microstrip 0.450″ x 0.270″ Microstrip 0.250″ x 0.060″ Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic RF - 35 - 0300, εr = 3.5 Figure 3. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Schematic C17 C7 VGG B2 B1 VDD C15 C16 C8 C2 C3 C4 C6 WB2 C1 CUT OUT AREA INPUT C14 L2 C5 L1 WB1 NOT RECOMMENDED FOR NEW DESIGN L1 RF INPUT Z1 + C15 C14 C9 C10 C13 C11 OUTPUT C12 MRF9045MB 900 MHz Rev−02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. NOT RECOMMENDED FOR NEW DESIGN VGG Figure 4. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Component Layout MRF9045NR1 4 RF Device Data Freescale Semiconductor 45 18 η 40 16 Two−Tone Measurement 100 kHz Tone Spacing 35 −30 IMD 15 14 IRL −32 −34 −36 12 930 935 940 945 950 −38 960 955 −10 −12 −14 −16 IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA 17 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) Gps 13 −18 f, Frequency (MHz) Figure 5. Class AB Broadband Circuit Performance IDQ = 525 mA 20 420 mA 350 mA 19.5 19 280 mA 18.5 18 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 17.5 17 0.1 1 10 100 −15 −20 −25 −30 IDQ = 280 mA −35 350 mA −40 525 mA −45 VDD = 28 Vdc −50 f1 = 945 MHz, f2 = 945.1 MHz −55 0.1 10 100 Figure 7. Intermodulation Distortion versus Output Power Figure 6. Power Gain versus Output Power −10 22 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz 3rd Order −40 5th Order −50 60 20 G ps , POWER GAIN (dB) −30 1 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP −20 420 mA −60 7th Order 18 40 16 30 14 20 12 −70 −80 50 Gps VDD = 28 Vdc IDQ = 350 mA f = 945 MHz η 10 1 10 100 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Intermodulation Distortion Products versus Output Power Figure 9. Power Gain and Efficiency versus Output Power 10 0 100 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 20.5 IMD, INTERMODULATION DISTORTION (dBc) 21 IMD, INTERMODULATION DISTORTION (dBc) NOT RECOMMENDED FOR NEW DESIGN 19 h , DRAIN EFFICIENCY (%) 50 20 NOT RECOMMENDED FOR NEW DESIGN TYPICAL CHARACTERISTICS MRF9045NR1 RF Device Data Freescale Semiconductor 5 1011 Pin = 1 W Pin = 0.6 W Pin = 0.3 W 24 26 IDQ = 350 mA f = 945 MHz Two−Tone Measurement 100 kHz Tone Spacing 28 30 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 10. Output Voltage versus Supply Voltage 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. MTTF Factor versus Junction Temperature NOT RECOMMENDED FOR NEW DESIGN 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 22 MTTF FACTOR (HOURS X AMPS2) P out , OUTPUT POWER (WATTS) PEP NOT RECOMMENDED FOR NEW DESIGN TYPICAL CHARACTERISTICS MRF9045NR1 6 RF Device Data Freescale Semiconductor Zload Zsource f = 945 MHz f = 945 MHz f = 930 MHz f = 930 MHz VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz Zsource Ω Zload Ω 930 0.81 - j0.25 2.03 + j0.09 945 0.85 - j0.05 2.03 + j0.28 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Zo = 5 Ω MRF9045NR1 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS MRF9045NR1 8 RF Device Data Freescale Semiconductor MRF9045NR1 RF Device Data Freescale Semiconductor 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MRF9045NR1 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 12 Sept. 2008 Description • Data sheet revised to reflect part status change, including use of applicable overlay. • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Added Product Documentation and Revision History, p. 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRF9045NR1 RF Device Data Freescale Semiconductor 11 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9045NR1 Document Number: MRF9045N Rev. 12, 9/2008 12 RF Device Data Freescale Semiconductor