FREESCALE MRF8P18265HSR6

Document Number: MRF8P18265H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Volts,
IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
15.9
44.8
6.9
--31.7
1840 MHz
16.1
43.4
7.0
--31.7
1880 MHz
16.0
43.7
6.7
--32.2
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 280 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
1805--1880 MHz, 72 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 375I--04
NI--1230--8
MRF8P18265HR6
CASE 375J--03
NI--1230S--8
MRF8P18265HSR6
N.C. 1
Table 1. Maximum Ratings
Rating
MRF8P18265HR6
MRF8P18265HSR6
8 VBWA
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
(Top View)
Operating Junction Temperature (1,2)
TJ
225
°C
Figure 1. Pin Connections
CW
446
4.5
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
RFinA/VGSA 2
7 RFoutA/VDSA
RFinB/VGSB 3
6 RFoutB/VDSB
5 VBWB
N.C. 4
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 72.5 W CW, 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V, 1880 MHz
Case Temperature 90°C, 260 W CW(4), 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V, 1880 MHz
Symbol
RθJC
Value (2,3)
0.27
0.25
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1.1
1.9
2.6
Vdc
Gate Quiescent Voltage
(VDD = 30 Vdc, IDA = 800 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics
(1)
On Characteristics (1)
Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 W Avg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
13.8
16.0
17.0
dB
Drain Efficiency
ηD
41.0
43.7
—
%
PAR
6.0
6.7
—
dB
ACPR
—
--32.2
--28.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
(3) (In
Typical Broadband Performance
Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V,
Pout = 72 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
15.9
44.8
6.9
--31.7
1840 MHz
16.1
43.4
7.0
--31.7
1880 MHz
16.0
43.7
6.7
--32.2
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a symmetrical Doherty configuration.
(continued)
MRF8P18265HR6 MRF8P18265HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V, 1805--1880 MHz
Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
224
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
280
—
W
—
72
—
IMD Symmetry @ 17 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
88
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 72 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.01
—
dB/°C
∆P1dB
—
0.005
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (2)
MHz
1. Measurement made with device in a symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
C5
C3
C7
C15
C9
R2
VGSA
C13
C17
CUT OUT AREA
C1
Z1
R1
C2
C24
P
C20
C22
VDSB
C14
C16
C6
C23
C25
C
R3
C8
VDSA
C21
C19
C18
VGSB
C11
C4
C12
C10
MRF8P18265H
Rev. 3
Figure 2. MRF8P18265HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P18265HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C13, C14,
C23, C24
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C5, C6, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7, C8
100 μF, 50 V Chip Capacitors
MCGPR50V107M8X11
Multicomp
C9, C10
470 μF, 63 V Chip Capacitors
MCGPR63V477M13X26--RH
Multicomp
C15, C16
6.8 μF Chip Capacitors
C4532X7RIH685KT
TDK
C17, C18
2.2 pF Chip Capacitors
ATC600F2R2BT250XT
ATC
C19, C20
0.8 pF Chip Capacitors
ATC600F0R8BT250XT
ATC
C21, C22
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C25
0.1 pF Chip Capacitor
ATC600F0R1BT250XT
ATC
R1
50 Ω, 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
GCS351--HYB1900
Soshin
PCB
0.020″, εr = 3.5
RF--35
Taconic
MRF8P18265HR6 MRF8P18265HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
46
45
ηD
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
15.8
43
Gps
15.6
IRL
PARC
15.4
44
--28
--10
--29
--13
--30
--31
15.2
15
14.8
1760
--32
ACPR
1780
1800
1820
1840
1860
1880
--33
1920
1900
--16
--19
--22
--25
--2
--2.4
--2.8
--3.2
--3.6
PARC (dB)
16
IRL, INPUT RETURN LOSS (dB)
16.2
ηD, DRAIN
EFFICIENCY (%)
16.4
Gps, POWER GAIN (dB)
47
VDD = 30 Vdc, Pout = 72 W (Avg.), IDQA = 800 mA, VGSB = 1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
16.6
ACPR (dBc)
16.8
--4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 72 Watts Avg.
--20
VDD = 30 Vdc, Pout = 17 W (PEP)
IDQA = 800 mA, VGSB = 1.3 Vdc
--30
IM3--L
IM3--U
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
--40
IM5--L
IM5--U
--50
IM7--U
--60
--70
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
17
0
16.5
16
15.5
15
14.5
VDD = 30 Vdc, IDQA = 800 mA, VGSB = 1.3 Vdc
f = 1840 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth
ηD
ACPR
--1
--2
Gps
--1 dB = 36 W
--3
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
--2 dB = 52 W
--3 dB = 72 W
--4
25
45
65
--25
50
--27
40
30
20
10
PARC
--5
60
85
105
0
125
--29
--31
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
17.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--33
--35
--37
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
Gps
1880 MHz
1840 MHz
1805 MHz
15
VDD = 30 Vd
IDQA = 800 mA
VGSB = 1.3 Vdc
14
60
0
50
--10
40
30
13
1805 MHz
ACPR
12
1880 MHz
1840 MHz
20
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
11
1
100
10
10
0
300
--20
--30
--40
ACPR (dBc)
1805 MHz
16
ηD
1880 MHz
1840 MHz
ηD, DRAIN EFFICIENCY (%)
17
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
18
Gain
GAIN (dB)
12
0
--10
IRL
--20
9
6
--30
VDD = 30 Vdc
Pin = 0 dBm
IDQA = 800 mA
VGSB = 1.3 Vdc
3
0
1700
1750
1800
IRL (dB)
15
--40
1850
1900
1950
--50
2000
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8P18265HR6 MRF8P18265HSR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 30 Vdc, IDQA = 800 mA
Max Pout (1)
f
MHz
Watts
dBm
Zsource
Ω
Zload
Ω
1805
195
52.9
2.38 -- j6.43
1.31 -- j2.51
1840
195
52.9
3.70 -- j7.13
1.21 -- j2.50
1880
190
52.8
4.23 -- j7.74
1.24 -- j2.51
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
Z
source
load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 30 Vdc, IDQA = 800 mA
f
MHz
Max Eff. (1)
%
Zsource
Ω
Zload
Ω
1805
69.3
2.38 -- j6.43
3.10 -- j1.22
1840
68.9
3.70 -- j7.13
2.59 -- j1.37
1880
68.3
4.23 -- j7.74
2.47 -- j1.17
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 30 Vdc, IDQA = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
58
Ideal
Pout, OUTPUT POWER (dBm)
57
56
55
Actual
54
53
52
1845 MHz
51
1845 MHz
50
49
1805 MHz
1805 MHz
1880 MHz
1880 MHz
48
47
28
29
30
31
32
34
33
35
36
37
38
39
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
1805
197
52.9
226
53.5
1845
194
52.9
223
53.5
1880
190
52.8
226
53.5
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
1805
P1dB
2.38 -- j6.43
1.30 -- j2.46
1845
P1dB
3.70 -- j7.13
1.40 -- j2.51
1880
P1dB
4.23 -- j7.74
1.27 -- j2.55
Figure 12. Pulsed CW Output Power
versus Input Power @ 30 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P18265HR6 MRF8P18265HSR6
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8P18265HR6 MRF8P18265HSR6
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8P18265HR6 MRF8P18265HSR6
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2010
• Initial Release of Data Sheet
1
Feb. 2012
• Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
• Removed Fig. 5, Possible Circuit Topologies, and renumbered all subsequent figures, p. 5--8
• Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed
dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14,
changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73.
• Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed
dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to
0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14.
MRF8P18265HR6 MRF8P18265HSR6
RF Device Data
Freescale Semiconductor, Inc.
13
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© Freescale Semiconductor, Inc. 2010, 2012. All rights reserved.
MRF8P18265HR6 MRF8P18265HSR6
Document Number: MRF8P18265H
Rev. 1, 2/2012
14
RF Device Data
Freescale Semiconductor, Inc.