FREESCALE MRF8S19260H

Document Number: MRF8S19260H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S19260HR6
MRF8S19260HSR6
Designed for CDMA and multicarrier base station applications with
frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
17.6
33.2
5.9
--36.0
1960 MHz
18.0
33.6
5.8
--35.7
1990 MHz
18.2
34.5
5.7
--34.6
1930--1990 MHz, 74 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 245 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375I--04
NI--1230--8
MRF8S19260HR6
CASE 375J--03
NI--1230S--8
MRF8S19260HSR6
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
N.C. 1
8 VBWA
RFinA/VGSA 2
7 RFoutA/VDSA
RFinB/VGSB 3
6 RFoutB/VDSB
5 VBWB
N.C. 4
TJ
225
°C
(Top View)
CW
291
1.48
W
W/°C
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 74 W CW, 30 Vdc, IDQ = 1600 mA, 1990 MHz
Case Temperature 91°C, 260 W CW(1), 30 Vdc, IDQ = 1600 mA, 1990 MHz
Symbol
RθJC
Value (3,4)
0.30
0.28
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S19260HR6 MRF8S19260HSR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.1
1.8
2.6
Vdc
Gate Quiescent Voltage
(VDS = 30 Vdc, ID = 1600 mAdc)
VGS(Q)
—
3.1
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 30 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.2
6.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., f = 1990 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
18.2
19.5
dB
Drain Efficiency
ηD
32.0
34.5
—
%
PAR
5.2
5.7
—
dB
ACPR
—
--34.6
--31.5
dBc
IRL
—
--13
—
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz
17.6
33.2
5.9
--36.0
--9
1960 MHz
18.0
33.6
5.8
--35.7
--11
1990 MHz
18.2
34.5
5.7
--34.6
--13
1. VGG = 1.6 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S19260HR6 MRF8S19260HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, 1930--1990 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
245
—
—
15
—
W
IMD Symmetry @ 220 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
75
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 74 W Avg.
GF
—
0.6
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.014
—
dB/°C
∆P1dB
—
0.011
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (1)
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S19260HR6 MRF8S19260HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
C10 C11
C5
R1
C8
C9
C4
R2
C22
C12
R3
C24*
C2*
C3*
C1
R7
CUT OUT AREA
C13*
R4
C6
R5
C15*
C16*
C14*
MRF8S19260
Rev. 0
C17
C18
R6
C7
C21
C19 C20
C23
*C2, C3, C13, C14, C15, C16, and C24 are mounted vertically.
Figure 2. MRF8S19260HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8S19260HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C2, C3, C5, C7, C8, C18
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C4, C6
6.8 μF, 50 V Chip Capacitors
C4532X7R1H685KT
TDK
C9, C17
2.2 μF, 50 V Chip Capacitors
C3225X7R1H225KT
TDK
C10, C11, C12, C19, C20, C21
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C13, C14
0.3 pF Chip Capacitors
ATC100B0R3BT500XT
ATC
C15, C16
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C22, C23
330 μF, 63 V Electrolytic Capacitors
MCRH63V337M13X21--RH
Multicomp
C24
1.2 pF Chip Capacitor
ATC800B1R2BT500XT
ATC
R1, R2, R5, R6
10 KΩ, 1/4 W Chip Resistors
CRCW120610K0JNEA
Vishay
R3, R7
4.75 Ω, 1/4 W Chip Resistors
CRCW12064R75FNEA
Vishay
R4
2.37 Ω, 1/4 W Chip Resistor
CRCW12062R37FNEA
Vishay
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S19260HR6 MRF8S19260HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
34
33
18
32
Gps
17.5
17
IRL
16.5
PARC
15.5
ACPR
1900
--5
--32
--7
--33.5
16
15
1880
--30.5
1920
1940
1960
1980
2000
2020
--35
--36.5
--38
2040
--9
--11
--13
--15
--1
--1.3
--1.6
--1.9
--2.2
PARC (dB)
35
ηD
IRL, INPUT RETURN LOSS (dB)
18.5
ηD, DRAIN
EFFICIENCY (%)
19
Gps, POWER GAIN (dB)
36
VDD = 30 Vdc, Pout = 74 W (Avg.), IDQ = 1600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
19.5
ACPR (dBc)
20
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 74 Watts Avg.
--10
VDD = 30 Vdc, Pout = 220 W (PEP), IDQ = 1600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50
IM7--L
--60
1
IM7--U
10
100
TWO--TONE SPACING (MHz)
18.5
0
18.3
18.1
17.9
17.7
17.5
Gps
ηD
PARC
42
--25
37
--30
ACPR
--1
32
--1 dB = 57 W
--2
27
--2 dB = 80 W
--3
--3 dB = 108 W
VDD = 30 Vdc, IDQ = 1600 mA, f = 1960 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
--4
--5
20
40
60
80
100
22
--35
--40
--45
17
--50
12
--55
120
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
18.7
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S19260HR6 MRF8S19260HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
19
17
40
Gps
1990 MHz
15
1930 MHz
30
1960 MHz
ACPR
13
20
1990 MHz
11
1960 MHz
1930 MHz
9
1
10
100
10
0
--10
0
300
--20
--30
--40
ACPR (dBc)
60
VDD = 30 Vdc, IDQ = 1600 mA, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
50
Probability on CCDF
ηD
ηD, DRAIN EFFICIENCY (%)
21
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
18
Gain
--3
12
--6
9
--9
IRL
6
--12
VDD = 30 Vdc
Pin = 0 dBm
IDQ = 1600 mA
3
0
1460
1585
1710
1835
IRL (dB)
GAIN (dB)
15
--15
1960
2085
2210
2335
--18
2460
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8S19260HR6 MRF8S19260HSR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1880
2.97 -- j0.46
0.95 -- j1.96
1900
3.16 -- j0.43
0.93 -- j1.86
1920
3.36 -- j0.42
0.92 -- j1.75
1940
3.58 -- j0.45
0.91 -- j1.65
1960
3.80 -- j0.53
0.91 -- j1.56
1980
4.02 -- j0.65
0.90 -- j1.46
2000
4.24 -- j0.83
0.90 -- j1.37
2020
4.43 -- j1.06
0.89 -- j1.29
2040
4.58 -- j1.35
0.89 -- j1.20
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF8S19260HR6 MRF8S19260HSR6
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60
VDD = 30 Vdc, IDQ = 1600 mA, Pulsed CW, 10 μsec(on) 10% Duty Cycle
Ideal
Pout, OUTPUT POWER (dBm)
59
58
57
1930 MHz
56
Actual
1990 MHz
55
1990 MHz
54
53
1930 MHz
1960 MHz
52
1960 MHz
51
50
49
29
30
31
32
33
35
34
37
36
38
39
40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
1930
316
55.0
380
55.8
1960
316
55.0
380
55.8
1990
324
55.1
389
55.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
1930
P1dB
6.70 -- j3.02
0.56 -- j1.05
1960
P1dB
8.54 + j0.58
0.53 -- j1.03
1990
P1dB
5.46 + j3.80
0.58 -- j1.01
Figure 11. Pulsed CW Output Power
versus Input Power @ 30 V
MRF8S19260HR6 MRF8S19260HSR6
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S19260HR6 MRF8S19260HSR6
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S19260HR6 MRF8S19260HSR6
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S19260HR6 MRF8S19260HSR6
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8S19260HR6 MRF8S19260HSR6
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2010
• Initial Release of Data Sheet
1
Feb. 2012
• Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
• Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed
dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14,
changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73.
• Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed
dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to
0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14.
MRF8S19260HR6 MRF8S19260HSR6
RF Device Data
Freescale Semiconductor, Inc.
13
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© Freescale Semiconductor, Inc. 2010, 2012. All rights reserved.
MRF8S19260HR6 MRF8S19260HSR6
Document Number: MRF8S19260H
Rev. 1, 2/2012
14
RF Device Data
Freescale Semiconductor, Inc.