MRF8P8300HR6, MRF8P8300HSR6 750-820 MHz, 96 W Avg., 28 V Single W-CDMA Later ...

Freescale Semiconductor
Technical Data
Document Number: MRF8P8300H
Rev. 1, 4/2013
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P8300HR6
MRF8P8300HSR6
Designed for W--CDMA and LTE base station applications with frequencies
from 750 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
790 MHz
20.9
35.2
6.2
--38.1
805 MHz
21.0
35.5
6.2
--38.1
820 MHz
20.9
35.7
6.1
--38.2
750--820 MHz, 96 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
 Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
 Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW
Features
NI--1230--4H
MRF8P8300HR6
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230--4S
MRF8P8300HSR6
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
TC
150
C
TJ
225
C
Case Operating Temperature
Operating Junction Temperature
(1,2)
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 96 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz
Case Temperature 85C, 300 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz
Symbol
RJC
Value (2,3)
0.26
0.21
Unit
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P8300HR6 MRF8P8300HSR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 400 Adc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ = 2000 mA, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
(1)
On Characteristics
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg., f = 820 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
20.0
20.9
23.5
dB
Drain Efficiency
D
34.5
35.7
—
%
PAR
5.9
6.1
—
dB
ACPR
—
--38.2
--36.5
dBc
IRL
—
--12
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Performance over Frequency (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
790 MHz
20.9
35.2
6.2
--38.1
--11
805 MHz
21.0
35.5
6.2
--38.1
--12
820 MHz
20.9
35.7
6.1
--38.2
--12
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(continued)
MRF8P8300HR6 MRF8P8300HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, 790--820 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
340
—
—
35
—
35
—
W
IMD Symmetry @ 290 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
Gain Flatness in 30 MHz Bandwidth @ Pout = 96 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.0185
—
dB/C
P1dB
—
0.0076
—
dB/C
Output Power Variation over Temperature
(--30C to +85C)
MHz
MHz
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C27
C23
C29
C25
C11
C53
C57
C13
R1
C4
C37
C9
C5*
C15
C19
C31
C3
C22
C18
C6*
C20
C16
C10
C43
C44
CUT OUT AREA
C2
C36
C34
C49
C41
C21
C7
C8
C1
C39
C47*
C33
C35
C17
C55
C45
C46
C42
C51
C48*
C32
C38
C40
C56
C52
C50
MRF8P8300H
Rev. 2
R2
C12
C14
C26
C28
C24
C58
C30
C54
B2
*C5, C6, C47, and C48 are mounted vertically.
Figure 2. MRF8P8300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P8300HR6(HSR6) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C39, C40, C41, C42
C3, C49, C50
C4
C5, C6, C11, C12, C47, C48
C7, C8, C45, C46
C9, C10
C13, C14, C19, C20, C25, C26
C15, C16, C35, C36
C17, C18
C21, C22
C23, C24
C27, C28
C29, C30
C31, C32
C33, C34
C37, C38
C43, C44
C51, C52
C53, C54, C55, C56
C57, C58
R1, R2
PCB
Description
Short Ferrite Beads
2.1 pF Chip Capacitors
1.0 pF Chip Capacitors
120 pF Chip Capacitor
39 pF Chip Capacitors
1.1 pF Chip Capacitors
4.7 F, 50 V Chip Capacitors
10 pF Chip Capacitors
4.7 pF Chip Capacitors
4.3 pF Chip Capacitors
8.2 pF Chip Capacitors
22 F Electrolytic Capacitors
20 pF Chip Capacitors
30 pF Chip Capacitors
13 pF Chip Capacitors
7.5 pF Chip Capacitors
1.5 pF Chip Capacitors
0.8 pF Chip Capacitors
2.0 pF Chip Capacitors
22 F, 50 V Chip Capacitors
470 F, 63 V Electrolytic Capacitors
3  Chip Resistors
0.030, r = 3.5
Part Number
MPZ2012S300AT000
ATC100B2R1BT500XT
ATC100B1R0BT500XT
ATC100B121JT500XT
ATC100B390JT500XT
ATC100B1R1BT500XT
C4532X5R1H475KT
ATC100B100JT500XT
ATC100B4R7CT500XT
ATC100B4R3CT500XT
ATC100B8R2CT500XT
UUD1V220MCL1GS
ATC100B200JT500XT
ATC100B300JT500XT
ATC100B130JT500XT
ATC100B7R5CT500XT
ATC100B1R5BT500XT
ATC100B0R8BT500XT
ATC100B2R0BT500XT
C5750JF1H226ZT
MCGPR63V477M13X26--RH
CRCW12063R00FNEA
RF35A2
Manufacturer
TDK
ATC
ATC
ATC
ATC
ATC
TDK
ATC
ATC
ATC
ATC
Nichicon
ATC
ATC
ATC
ATC
ATC
ATC
ATC
TDK
Multicomp
Vishay
Taconic
MRF8P8300HR6 MRF8P8300HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, Pout = 96 W (Avg.), IDQ = 2000 mA
32
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30
Gps, POWER GAIN (dB)
23
22
28
21
20
Gps
19
PARC
18
16
15
730
--32
--4
--36
--38
ACPR
750
0
--34
IRL
17
--30
--40
770
790
810
830
850
870
--8
--12
--16
--20
890
--1
--1.3
--1.6
--1.9
--2.2
PARC (dB)
34
D
IRL, INPUT RETURN LOSS (dB)
36
24
ACPR (dBc)
25
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 96 Watts Avg.
--10
VDD = 28 Vdc, Pout = 290 W (PEP), IDQ = 2000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 805 MHz
--20
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--U
IM7--L
--60
1
100
10
TWO--TONE SPACING (MHz)
21.5
0
21
20.5
20
19.5
19
VDD = 28 Vdc, IDQ = 2000 mA, f = 805 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
56
--25
ACPR
50
--30
D
44
--1
--1 dB = 75.1 W
--2
--3 dB = 153.4 W
--2 dB = 110.5 W
--3
Gps
PARC
--4
--5
38
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
40
70
100
130
160
32
--35
--40
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
22
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--45
26
--50
20
190
--55
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
22 790 MHz
805 MHz
805 MHz
820 MHz
820 MHz
21
ACPR
18
820 MHz
790 MHz
10
1
--10
33
22
805 MHz
17
55
44
VDD = 28 Vdc, IDQ = 2000 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
19
0
D
Gps
20
66
11
0
400
100
--20
--30
--40
ACPR (dBc)
790 MHz
D, DRAIN EFFICIENCY (%)
23
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
Gain
20
5
16
0
--5
12
IRL
IRL (dB)
GAIN (dB)
24
--10
8
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 2000 mA
4
0
580
640
700
--15
760
820
880
940
1000
--20
1060
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8P8300HR6 MRF8P8300HSR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 2000 mA, Pout = 96 W Avg.
f
MHz
Zsource

Zload

730
1.07 -- j1.15
0.86 -- j0.18
750
1.06 -- j0.97
0.90 + j0.04
770
1.11 -- j0.78
1.07 + j0.46
790
1.05 -- j0.62
1.28 -- j0.67
810
1.11 -- j0.45
0.88 -- j0.12
830
1.19 -- j0.26
0.87 + j0.04
850
1.95 + j0.48
0.82 + j0.05
870
1.35 -- j1.66
0.71 + j0.12
890
0.95 -- j1.07
0.59 + j0.22
Zsource = Test circuit impedance as measured from
gate to ground, gate leads are tied together.
Zload
= Test circuit impedance as measured from
drain to ground, drain leads are tied together.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQA = 1000 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
61.5
Pout, OUTPUT POWER (dBm)
60
Ideal
58.5
57
Actual
55.5
54
822 MHz
52.5
806 MHz
790 MHz
51
49.5
806 MHz
790 MHz
822 MHz
48
46.5
45
25
26.5 28
29.5 31
32.5
34
35.5
37 38.5
40
41.5
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
790
288
54.6
363
55.6
806
299
54.8
366
55.6
822
287
54.6
349
55.4
Test Impedances per Compression Level
f
(MHz)
Zsource

Zload

790
P1dB
1.04 -- j0.98
0.78 -- j0.73
806
P1dB
1.16 -- j1.39
0.76 -- j0.71
822
P1dB
1.24 -- j1.73
0.76 -- j0.74
Figure 11. Pulsed CW Output Power
versus Input Power @ 28 V
Note: Measurement made on a per side basis.
MRF8P8300HR6 MRF8P8300HSR6
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8P8300HR6 MRF8P8300HSR6
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8P8300HR6 MRF8P8300HSR6
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, tools and software to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2011
 Initial Release of Data Sheet
1
Apr. 2013
 Changed operating frequency from 790--820 MHz to 750--820 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
 Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 9, 10. Changed dimension C from
0.150--0.200 to CC 0.170--0.190.
 Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 11, 12. Changed dimension C from
0.150--0.200 to CC 0.170--0.190. Added minimum Z dimension R0.00.
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2011, 2013 Freescale Semiconductor, Inc.
MRF8P8300HR6 MRF8P8300HSR6
Document Number: MRF8P8300H
Rev.
14 1, 4/2013
RF Device Data
Freescale Semiconductor, Inc.