MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54585WP 8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585WP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform highcurrent driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO > 50V) ● High-current driving (IC(max) = 500mA) ● With clamping diodes ● Driving available with TTL output or with PMOS IC output PIN CONFIGURATION INPUT IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 GND APPLICATIONS Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces FUNCTION The M54585 is each have eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7kΩbetween the base and input pin. A spikekiller clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. 10 9 OUTPUT →COM COMMON Package type 18P4X CIRCUIT DIAGRAM COM OUTPUT 2.7K INPUT 7.2K 3K GND The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Conditions Output , H Current per circuit output, L Ta = 25℃, when mounted on board Ratings – 0.5 ～ + 50 500 – 0.5 ～ +30 500 50 1.79 – 20 ～ + 75 – 55 ～ + 125 Unit V mA V mA V W ℃ ℃ Aug-2011 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54585WP 8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol Parameter VO min Limits typ max 0 － 50 0 － 400 0 － 200 3.85 3.4 0 － － － Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) IC VIH “H” input voltage VIL “L” input voltage Duty Cycle no more than 6% Duty Cycle no more than 34% Unit V mA IC ≤ 400mA IC ≤ 200mA 30 V 0.6 V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol V(BR)CEO VCE(sat) II VF IR hFE min Limits typ＊ max ICEO = 100μA 50 － － V VI = 3.85V , IC = 400mA VI = 3.4V , IC = 200mA － － 1.3 1.0 2.4 1.6 V Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor Test conditions Unit VI = 3.85V － 0.95 1.8 VI = 25V － 8.7 18 IF = 400mA － 1.5 2.4 V VR = 50V － － 100 μA 1000 2500 － － VCE = 4V, IC = 350mA, Ta = 25℃ mA *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol ton toff Parameter Turn-on time Turn-off time Test conditions CL = 15pF（note 1） min Limits typ max — — 12 240 — — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO Measured device INPUT RL 50% 50% OPEN OUTPUT PG 50Ω OUTPUT CL 50% ｔon 50% ｔoff (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 3.85V (2) Input-output conditions : RL = 25Ω, Vo = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug-2011 2 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54585WP 8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 2.0 VI=3.4V Collector current IC(mA) Power dissipation Pd(W) M54585WP 1.5 1.0 0.5 0 0 25 50 75 ① ③ 200 ④ ⑤ ⑥ ⑦ ⑧ 10 •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25℃ 4 7 DC amplification factor hFE Collector current IC(mA) 300 60 80 0.5 1.0 1.5 2.0 ① 300 ② ③ 200 ④ ⑤ ⑥ ⑦ ⑧ •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75℃ 100 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 500 VCE=4V VCE=4V 5 3 2 10 0 400 0 100 Collector current IC(mA) Collector current IC(mA) ② 40 100 500 400 20 Ta=25℃ Ta=-20℃ Duty-Cycle-Collector current Characteristics Duty-Cycle-Collector current Characteristics 0 Ta=75℃ 200 Output saturation voltage VCE(sat)(V) 500 0 300 0 100 Ambient temperature Ta(℃) 100 400 Ta=75℃ 3 7 Ta=25℃ 5 3 Ta=-20℃ 400 Ta=75℃ Ta=25℃ 300 Ta=-20℃ 200 100 2 10 2 1 10 2 3 5 7 10 2 2 3 5 7 10 0 3 0 1 2 3 4 Input voltage VI(V) Collector current IC(mA) Aug-2011 3 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54585WP 8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics 500 Forward bias current IF(mA) 10 Input current II(mA) 8 Ta=-20℃ 6 Ta=25℃ 4 Ta=75℃ 2 400 300 200 100 Ta=25℃ Ta=75℃ Ta=-20℃ 0 0 5 10 15 20 0 25 Input voltage VI(V) 0 0.5 1.0 1.5 2.0 Forward bias Voltage VF(V) Aug-2011 4 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54585WP 8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE PACKAGE OUTLINE Aug-2011 5