MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54525AGP is seven-circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES ● High breakdown voltage (BVCEO ≥ 50V) ● High-current driving (IC(max ) = 500mA ) ● With clamping diodes ● Driving available with PMOS IC output of 24V ● Wide operating temperature range (Ta = –40 to +85°C) IN1→ 1 16 → O1 IN2→ 2 15 → O2 IN3→ 3 14 → O3 IN4→ 4 13 → O4 IN5→ 5 12 → O5 IN6→ 6 11 → O6 IN7→ 7 10 → O7 GND 9 8 OUTPUT COM COMMON Package type 16P2S-A CIRCUIT DIAGRAM COM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT INPUT 10.5k Vz=7V 5k 3k GND FUNCTION The M54525AGP has seven circuits consisting of NPN Darlington transistors. This IC has resistance of 10.5kΩ and Zener diode between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum. The M54525AGP is enclosed in molded small flat package, enabling space-saving design. The seven circuits share COM and GND. The diode, indicated with the dotted line, parasitic, and cannot be used. Unit: Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +50 500 –0.5 ~ +30 500 50 0.80 –40 ~ +85 –55 ~ +125 Unit V mA V mA V W °C °C Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) Symbol Limits Parameter VIH Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage VIL “L” input voltage VO IC typ — max Duty Cycle no more than 4% 0 — 400 Duty Cycle no more than 15% 0 — 200 17 — — 25 V 6 V Parameter V (BR) CEO Collector-emitter breakdown voltage Symbol ton Limits Test conditions min 50 — — — — — — 1000 ICEO = 100µA II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA II = 250µA, IC = 100mA Input current VI = 17V Clamping diode forward voltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA SWITCHING CHARACTERISTICS typ — 1.2 1.0 0.9 0.8 1.3 — 2000 Unit max — 1.6 1.3 1.1 1.3 2.0 100 — V V mA V µA — (Unless otherwise noted, Ta = 25°C) Parameter Turn-on time Turn-off time toff V (Unless otherwise noted, Ta = 25°C) Symbol II VF IR hFE 50 mA 0 ELECTRICAL CHARACTERISTICS VCE(sat) Unit min 0 Limits Test conditions CL = 15pF (note 1) min — typ 5 max — — 100 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT INPUT Vo 50% Measured device 50% RL OPEN OUTPUT PG 50Ω CL OUTPUT 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 17V (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 1.0 500 0.8 Collector current Ic (mA) Power dissipation Pd (W) II = 500µA 0.6 0.416 0.4 0.2 400 300 200 Ta = 25°C 100 Ta = 85°C 0 0 25 0 75 85 100 50 500 300 2 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 0 20 40 60 3 4 5 6 7 Collector current Ic (mA) Collector current Ic (mA) 2.0 Duty Cycle-Collector Characteristics 400 300 1 200 2 100 3 4 5 6 7 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C 0 100 80 20 0 40 60 80 100 Duty cycle (%) Duty cycle (%) DC amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 104 500 VCE = 2V VCE = 2V 3 Ta = 85°C 2 103 7 5 Ta = 25°C 3 Ta = –40°C Collector current Ic (mA) DC amplification factor hHE 1.5 Duty Cycle-Collector Characteristics 1 7 5 1.0 Output saturation voltage VCE(sat) (V) 400 0 0.5 Ambient temperature Ta (°C) 500 100 0 Ta = –40°C 400 300 200 Ta = 85°C Ta = 25°C 100 Ta = –40°C 2 102 1 10 2 3 5 7 102 2 3 Collector current Ic (mA) 5 7 103 0 0 2 4 6 8 10 12 14 16 Input voltage VI (V) Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54525AGP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Input Characteristics Clamping Diode Characteristics 500 2 Ta = –40°C Ta = 25°C 1 Ta = 85°C 0 0 5 10 15 20 Input voltage VI (V) 25 30 Forward bias current IF (mA) Input current II (mA) 3 400 300 200 Ta = 25°C 100 Ta = 85°C 0 0 0.5 Ta = –40°C 1.0 1.5 2.0 Forward bias voltage VF (V) Feb.2003