VISHAY SS22S

New Product
SS22S, SS23S, SS24S
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V, 30 V, 40 V
IFSM
40 A
VF at IF = 2.0 A
0.517 V
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS22S
SS23S
SS24S
22S
23S
24S
20
30
40
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
40
A
dV/dt
10 000
V/μs
TJ, TSTG
- 55 to + 150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Document Number: 89407
Revision: 19-Apr-11
V
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS22S, SS23S, SS24S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1 A
Instantaneous forward voltage
TJ = 25 °C
IF = 2 A
Reverse current
TJ = 25 °C
Rated VR
Typical junction capacitance
TJ = 100 °C
SYMBOL
VF (1)
TYP.
MAX.
0.436
-
0.517
0.55
13
200
μA
1.65
8
mA
130
-
pF
V
IR (2)
4.0 V, 1 MHz
UNIT
CJ
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
SS22S
SS23S
RJA
(1)
75
RJL
(1)
25
SS24S
UNIT
°C/W
Note
(1) PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS24S-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SS24S-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
D = 0.8
D = 0.3 D = 0.5
Resistive or Inductive Load
1.0
2.0
Average Power Loss (W)
Average Forward Rectified Current (A)
2.4
1.6
1.2
0.8
P.C.B. Mounted on
0.4" x 0.4" (10 mm x 10 mm)
Copper Pad Areas
0.4
D = 0.2
D = 0.1
0.8
D = 1.0
0.6
T
0.4
0.2
D = tp/T
tp
0
0
0
25
50
75
100
125
150
175
0
0.5
1.0
1.5
2.0
2.5
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
Document Number: 89407
[email protected], [email protected], [email protected]
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS22S, SS23S, SS24S
Vishay General Semiconductor
100 000
8.3 ms Single Half Sine-Wave
at Rated TL
Instantaneous Reverse Current (μA)
Peak Forward Surge Current (A)
50
40
30
20
10
TJ = 150 °C
10 000
TJ = 125 °C
1000
100
TJ = 25 °C
10
0
1
0
10
100
10
20
30
40
50
60
70
80
90
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Reverse Leakage Characteristics
1000
TJ = 150 °C
TJ = 125 °C
10
1
0.1
0.1
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.3
0.5
0.7
0.9
1.1
1.3
0.1
10
1
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89407
Revision: 19-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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