New Product SS22S, SS23S, SS24S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 40 A VF at IF = 2.0 A 0.517 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS22S SS23S SS24S 22S 23S 24S 20 30 40 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 40 A dV/dt 10 000 V/μs TJ, TSTG - 55 to + 150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89407 Revision: 19-Apr-11 V For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS22S, SS23S, SS24S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1 A Instantaneous forward voltage TJ = 25 °C IF = 2 A Reverse current TJ = 25 °C Rated VR Typical junction capacitance TJ = 100 °C SYMBOL VF (1) TYP. MAX. 0.436 - 0.517 0.55 13 200 μA 1.65 8 mA 130 - pF V IR (2) 4.0 V, 1 MHz UNIT CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SS22S SS23S RJA (1) 75 RJL (1) 25 SS24S UNIT °C/W Note (1) PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS24S-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel SS24S-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 D = 0.8 D = 0.3 D = 0.5 Resistive or Inductive Load 1.0 2.0 Average Power Loss (W) Average Forward Rectified Current (A) 2.4 1.6 1.2 0.8 P.C.B. Mounted on 0.4" x 0.4" (10 mm x 10 mm) Copper Pad Areas 0.4 D = 0.2 D = 0.1 0.8 D = 1.0 0.6 T 0.4 0.2 D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89407 [email protected], [email protected], [email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS22S, SS23S, SS24S Vishay General Semiconductor 100 000 8.3 ms Single Half Sine-Wave at Rated TL Instantaneous Reverse Current (μA) Peak Forward Surge Current (A) 50 40 30 20 10 TJ = 150 °C 10 000 TJ = 125 °C 1000 100 TJ = 25 °C 10 0 1 0 10 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Reverse Leakage Characteristics 1000 TJ = 150 °C TJ = 125 °C 10 1 0.1 0.1 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.3 0.5 0.7 0.9 1.1 1.3 0.1 10 1 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89407 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. 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