UG4A thru UG4D Vishay General Semiconductor Miniature Ultrafast Plastic Rectifiers FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability DO-201AD • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. IF(AV) 4.0 A VRRM 50 V to 200 V IFSM 150 A trr 20 ns MECHANICAL DATA VF 0.95 V TJ max. 150 °C Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG4A UG4B UG4C UG4D UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Maximum average forward rectified current (fig. 1) IF(AV) 4.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 89431 Revision: 04-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG4A thru UG4D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VALUE UNIT VF (1) 0.95 V IF = 4.0 A TA = 25 °C Maximum DC reverse current at rated DC blocking voltage 5.0 IR TA = 100 °C Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Typical reverse recovery time IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM Typical stored charge Typical junction capacitance μA 300 trr TJ = 25 °C 20 ns 30 trr TJ = 100 °C TJ = 25 °C ns 50 15 Qrr TJ = 100 °C 4.0 V, 1 MHz nC 30 CJ 20 pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RJA UG4A UG4B (1) UG4C UG4D UNIT 25 °C/W Note Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE UG4D-M3/54 1.138 54 1400 13" diameter paper tape and reel UG4D-M3/73 1.138 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature 5.0 4.0 3.0 2.0 TA, Ambient Temperature P.C.B. Mounted 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 1.0 0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 6.0 TL = 75 °C 8.3 ms Single Half Sine-Wave 100 10 1 0 25 50 75 100 125 150 175 1 10 100 Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89431 [email protected], [email protected], [email protected] Revision: 04-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UG4A thru UG4D Vishay General Semiconductor 60 Recovered Stored Change/Reverse Recovery Time, nC/ns Instantaneous Forward Current (A) 100 TJ = 100 °C Pulse Width = 300 μs 1 % Duty Cycle 10 TJ = 25 °C 1 0.1 0.01 0.4 dI/dt = 150 A/μs 50 dI/dt = 100 A/μs 40 dI/dt = 20 A/μs dI/dt = 50 A/μs dI/dt = 100 A/μs dI/dt = 150 A/μs 30 dI/dt = 50 A/μs 20 dI/dt = 20 A/μs 10 trr Qrr 0 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 25 50 75 100 125 150 Instantaneous Forward Voltage (V) Junction Temperature (°C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Reverse Switching Charateristics 1000 175 100 100 Junction Capacitance (pF) Instantaneous Reverse Leakage Current (μA) IF = 4.0 A VR = 30 V TJ = 100 °C 10 TJ = 25 °C 1 0.1 20 40 60 80 10 1 0.1 0.01 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1 10 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 89431 Revision: 04-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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