New Product SS22S, SS23S & SS24S Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. (Note: These devices are not Q101 qualified.) PRIMARY CHARACTERISTICS IF(AV) 2A VRRM 20 V, 30 V, 40 V IFSM 40 A VF at IF = 2.0 A 0.517 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for commercial grade, meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS22S SS23S SS24S UNIT 22S 23S 24S V 30 40 Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (Fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 40 A Voltage rate of change (rated VR) dV/dt 10000 V/µs TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 89008 Revision: 14-Jan-08 20 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 New Product SS22S, SS23S & SS24S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage (1) IF = 1 A, IF = 2 A, Reverse current (1) rated VR Typical junction capacitance 4.0 V, 1 MHz SYMBOL TYP MAX. UNIT TJ = 25 °C VF 0.436 0.517 0.55 V TJ = 25 °C TJ = 100 °C IR 13 1.65 200 8 µA mA CJ 130 - pF Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS22S SS23S RθJA RθJL Typical thermal resistance (1) SS24S UNIT 75 25 °C/W Note: (1) P.C.B. mounted with 0.4 x 0.4" (10 x 10 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS24S-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel SS24S-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 D = 0.3 Resistive or Inductive Load 1.6 1.2 0.8 P.C.B. Mounted on 0.4 x 0.4" (10 x 10 mm) Copper Pad Areas 0.4 D = 0.5 D = 0.8 D = 0.2 1.0 2.0 Average Power Loss (W) Average Forward Rectified Current (A) 2.4 D = 0.1 0.8 D = 1.0 0.6 T 0.4 0.2 D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 0.5 1.0 1.5 2.0 2.5 Lead Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89008 Revision: 14-Jan-08 New Product SS22S, SS23S & SS24S Vishay General Semiconductor 100000 At rated TL 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 50 40 30 20 10 TJ = 150 °C 10000 TJ = 125 °C 1000 100 TJ = 25 °C 10 1 0 0 10 10 100 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Reverse Leakage Characteristics 1000 TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.1 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.3 0.5 0.7 0.9 1.1 1.3 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Instantaneous Forward Characteristics Figure 6. Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89008 Revision: 14-Jan-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1