Photomicrosensor (Transmissive) EE-SX1140 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 14-mm-wide slot. • 16.3-mm-tall model with a deep slot. • PCB mounting type. Four, C0.3 Four, 0.8 3.2±0.1 dia. through-hole 3 ■ Absolute Maximum Ratings (Ta = 25°C) 5 Four, 0.8 Item 14 Emitter 23 0.2 A B Optical axis Detector 16.3 12.5±0.15 (13.5) 5.2 2.8 C A B Four, 0.5 4.5±0.5 K Four, 0.25 (2.5) Cross section AA A (2.5) Cross section BB (19.9) Ambient temperature Internal Circuit C K 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Soldering temperature Unless otherwise specified, the tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. E A Dimensions Terminal No. Name A Anode K C E Cathode Collector Emitter Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 6 < mm ≤ 10 ±0.375 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value IF 1.5 1.5 E Symbol Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.4 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 84 EE-SX1140 Photomicrosensor (Transmissive) ■ Engineering Data 150 100 30 50 20 10 −20 0 20 40 60 0 100 80 Ta = −30°C Ta = 25°C 40 Ta = 70°C 30 20 0 10 Relative light current IL (%) Light current IL (mA) IF = 40 mA IF = 30 mA 5 IF = 20 mA 3 IF = 10 mA 2 1 0 1 2 3 4 5 6 7 8 9 10,000 Relative light current IL (%) VCC = 5 V Ta = 25°C Response time tr, tf (μs) 0.8 1 1.2 1.4 1.6 2 1.8 0 100 90 80 70 1,000 tf 100 tr 10 Load resistance RL (kΩ) 20 40 60 30 40 50 80 100 VCE = 10 V 0 lx 1,000 100 10 1 0.1 0.01 0.001 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Sensing Position Characteristics (Typical) 120 120 IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) d 80 60 40 20 0 10 1 0 20 Dark Current vs. Ambient Temperature Characteristics (Typical) 10,000 −20 10 Forward current IF (mA) 110 60 −40 10 Response Time vs. Load Resistance Characteristics (Typical) 0.1 0.6 IF = 20 mA VCE = 5 V Collector−Emitter voltage VCE (V) 1 0.01 0.4 120 7 4 0.2 Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 50 mA 9 6 4 Forward voltage VF (V) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) 8 6 0 0 Ambient temperature Ta (°C) Ta = 25°C 8 10 Dark current ID (nA) 0 −40 Ta = 25°C VCE = 10 V 50 −1.5 −0.75 0 0.75 1.5 2.25 Distance d (mm) 3 Relative light current IL (%) 40 10 Light current IL (mA) PC Forward current IF (mA) IF 50 Light Current vs. Forward Current Characteristics (Typical) 60 Collector dissipation PC (mW) 60 Forward current IF (mA) Forward Current vs. Forward Voltage Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C 100 (Center of optical axis) Forward Current vs. Collector Dissipation Temperature Rating 80 d 60 40 20 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Distance d (mm) Response Time Measurement Circuit Input 0 t Output 90% 10% 0 t tf tr Input IL VCC Output RL EE-SX1140 Photomicrosensor (Transmissive) 85