Back Opto–Switch EE–SX1235A–P2 Transmissive Phototransistor output. Snap-in mounting mechanism for easy mounting and dismounting. Compatible with 1.0-, 1.2- and 1.6-mm-thick PCBs. High resolution with a 0.5-mm-wide aperture. 5-mm-wide slot. Connects to Japan AMP’s CT-series connectors. Dimensions Four, R0.5 Post header 175489-3 (Japan AMP) Internal Circuit 3 A (3) (2) (1) 3 (see note) 3.2 (slit width) 0.5 (slit width) 1 C 2 K, E Optical axis Name Anode Collector Cathode, Emitter Unless otherwise specified, the tolerances are as shown below. (see note ) Note: Terminal No. A C K, E The asterisked dimension is specified by datum A only. Recommended Connectors: Japan AMP 173977-3 (insulation displacement-type connector) 175778-3 (crimp-type connector) 179228-3 (crimp-type connector) Dimensions Tolerance 3 mm max. ±0.3 3 < mm 6 ±0.375 6 < mm 10 ±0.45 10 < mm 18 ±0.55 18 < mm 30 ±0.65 For recommended mounting holes see EE–SX4235–P2 on page 402 Specifications Absolute Maximum Ratings (Ta = 25°C) Item Emitter Detector Ambient temperature Note: Symbol Rated value Forward current IF 50 mA (see note) Pulse forward current IFP --- Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO 5V Collector current IC 20 mA Collector dissipation PC 100 mW (see note) Operating Topr –25°C to 95°C Storage Tstg –40°C to 100°C Soldering Tsol --- Refer to the temperature rating chart if the ambient temperature exceeds 25°C. Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 µA typ., 10 µA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 30 mA Light current IL 0.6 mA min., 14 mA max. IF = 20 mA, VCE = 5 V Dark current ID 200 nA max. VCE = 10 V, 0 ȏx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.3 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 5 V Rising time tr 8 µs typ. VCC = 5 V, RL = 100 Ω, IL = 1 mA Falling time tf 8 µs typ. VCC = 5 V, RL = 100 Ω, IL = 1 mA Detector Engineering Data Ambient temperature Ta (°C) Light Current vs. Collector–Emitter Voltage Characteristics (Typical) IF = 30 mA IF = 20 mA IF = 10 mA Collector–Emitter voltage VCE (V) Response Time vs. Load Resistance Characteristics (Typical) Light current I L (mA) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 ȏx IF = 20 mA VCE = 5 V Ambient temperature Ta (°C) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) Relative light current I L (%) Vcc = 5 V Ta = 25°C Response time tr, tf ( µ s) Ta = 70°C Forward voltage VF (V) Relative light current I L (%) Light current I L (mA) IF = 40 mA Ta = 25°C Relative Light Current vs. Ambient Temperature Characteristics (Typical) Ta = 25°C IF = 50 mA Ta = –30°C Dark current I D (nA) PC Light Current vs. Forward Current Characteristics (Typical) Ta = 25°C VCE = 10 V Forward current I F (mA) IF Forward current I F (mA) Forward Current vs. Forward Voltage Characteristics (Typical) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis) Response Time Measurement Circuit Input Output 10% 90% Input VCC Output GND Load resistance RL (kΩ) Distance d (mm)