MC74VHC1G125 Noninverting 3-State Buffer Features • • • • • • • High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 58; Equivalent Gates = 15 These Devices are Pb−Free and are RoHS Compliant OE 1 IN A 2 GND 3 5 VCC 4 OUT Y OE EN MARKING DIAGRAMS 5 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A W0 M G G 1 5 5 1 TSOP−5 / SOT−23 / SC−59 DT SUFFIX CASE 483 W0 M G G 1 W0 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. PIN ASSIGNMENT Figure 1. Pinout (Top View) IN A http://onsemi.com M The MC74VHC1G125 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffered 3−state output which provides high noise immunity and stable output. The MC74VHC1G125 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G125 to be used to interface 5 V circuits to 3 V circuits. 1 OE 2 IN A 3 GND 4 OUT Y 5 VCC FUNCTION TABLE OUT Y Figure 2. Logic Symbol A Input OE Input Y Output L H X L L H L H Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 16 1 Publication Order Number: MC74VHC1G125/D MC74VHC1G125 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage Characteristics −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V −0.5 to 7.0 −0.5 to VCC + 0.5 V −20 mA +20 mA +25 mA VOUT DC Output Voltage VCC = 0 High or Low State IIK Input Diode Current IOK Output Diode Current IOUT DC Output Current, per Pin ICC DC Supply Current, VCC and GND PD Power Dissipation in Still Air qJA Thermal Resistance TL VOUT < GND; VOUT > VCC +50 mA SC−88A, TSOP−5 200 mW SC−88A, TSOP−5 333 °C/W Lead Temperature, 1 mm from Case for 10 secs 260 °C TJ Junction Temperature Under Bias +150 °C Tstg Storage Temperature −65 to +150 °C Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) > 2000 > 200 N/A V Above VCC and Below GND at 125°C (Note 4) $500 mA VESD ESD Withstand Voltage ILatchup Latchup Performance Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to JESD22−C101−A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0.0 5.5 V VOUT TA tr , tf DC Output Voltage 0.0 VCC V Operating Temperature Range −55 +125 °C 0 0 100 20 ns/V Input Rise and Fall Time VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1G125 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.5 2.1 3.15 3.85 VIH Minimum High−Level Input Voltage 2.0 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VOL Maximum Low−Level Output Voltage VIN = VIH or VIL TA = 25°C VCC (V) Typ TA ≤ 85°C Max Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 VIN = VIH or VIL IOH = −50 mA 2.0 3.0 4.5 1.9 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA Max 2.0 3.0 4.5 0.0 0.0 0.0 −55 ≤ TA ≤ 125°C Min Max 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 V 0.5 0.9 1.35 1.65 1.9 2.9 4.4 1.9 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IOZ Maximum 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ±0.2 5 $2.5 $2.5 mA IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 $1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ CIN COUT Typ Max Max Unit VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.5 6.4 8.0 11.5 9.5 13.0 12.0 16.0 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.5 4.5 5.5 7.5 6.5 8.5 8.5 10.5 Maximum Output Enable Time, Input OE to Y (Figures 4 and 5) VCC = 3.3 ± 0.3 V RL = 1000 W CL = 15 pF CL = 50 pF 4.5 6.4 8.0 11.5 9.5 13.0 11.5 15.0 VCC = 5.0 ± 0.5 V RL = 1000 W CL = 15 pF CL = 50 pF 3.5 4.5 5.1 7.1 6.0 8.0 8.5 10.5 Maximum Output Disable Time, Input OE to Y (Figures 4 and 5) VCC = 3.3 ± 0.3 V RL 1000 W CL = 15 pF CL = 50 pF 6.5 8.0 9.7 13.2 11.5 15.0 14.5 18.0 VCC = 5.0 ± 0.5 V RL = 1000 W CL = 15 pF CL = 50 pF 4.8 7.0 6.8 8.8 8.0 10.0 10.0 12.0 Maximum Input Capacitance 4.0 10 10 10 Maximum 3−State Output Capacitance (Output in High Impedance State) 6.0 Test Conditions Min Max −55 ≤ TA ≤ 125°C Maximum Propagation Delay, Input A to Y (Figures 3 and 4) Parameter Min TA ≤ 85°C Min ns ns pF pF Typical @ 25°C, VCC = 5.0 V CPD 8.0 Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1G125 SWITCHING WAVEFORMS VCC OE 50% GND tPZL VCC 50% GND tPZH tPHL tPLH HIGH IMPEDANCE 50% VCC Y A tPLZ VOL + 0.3V tPHZ VOH - 0.3V 50% VCC 50% VCC Y HIGH IMPEDANCE Y Figure 4. Switching Wave Forms Figure 5. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST DEVICE UNDER TEST CL* *Includes all probe and jig capacitance OUTPUT 1 kW CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 6. Test Circuit Figure 7. Test Circuit INPUT Figure 8. Input Equivalent Circuit ORDERING INFORMATION Device Package M74VHC1G125DFT1G SC−88A/SOT−353/SC−70 (Pb−Free) M74VHC1G125DFT2G TSC−88A/SOT−353/SC−70 (Pb−Free) M74VHC1G125DTT1G TSOP−5/SOT−23/SC−59 (Pb−Free) Shipping† 3000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1G125 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1G125 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE H D 5X NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 0.20 C A B M 5 1 4 2 L 3 B S K DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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