ONSEMI MUN2130

MUN2130, MMUN2130L,
MUN5130, DTA113EE,
DTA113EM3, NSBA113EF3
Digital Transistors (BRT)
R1 = 1 kW, R2 = 1 kW
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PNP Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
•
•
•
•
•
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
SC−59
CASE 318D
STYLE 1
XXX MG
G
SOT−23
CASE 318
STYLE 6
1
1
MAXIMUM RATINGS (TA = 25°C)
Rating
XX MG
G
IC
100
mAdc
Input Forward Voltage
VIN(fwd)
10
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
XX MG
G
SC−70/SOT−323
CASE 419
STYLE 3
XX M
SC−75
CASE 463
STYLE 1
XX M
SOT−723
CASE 631AA
STYLE 1
XM 1
SOT−1123
CASE 524AA
STYLE 1
1
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 2
1
Publication Order Number:
DTA113E/D
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
Table 1. ORDERING INFORMATION
Part Marking
Package
Shipping†
6G
SC−59
(Pb−Free)
3000 / Tape & Reel
A6G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MUN5130T1G
6G
SC−70/SOT−323
(Pb−Free)
3000 / Tape & Reel
DTA113EET1G
6G
SC−75
(Pb−Free)
3000 / Tape & Reel
DTA113EM3T5G
7E
SOT−723
(Pb−Free)
8000 / Tape & Reel
NSBA113EF3T5G
L (180°)
SOT−1123
(Pb−Free)
8000 / Tape & Reel
Device
MUN2130T1G
MMUN2130LT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
* (xx°) = Degree rotation in the clockwise direction.
PD, POWER DISSIPATION (mW)
300
250
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
200
150
(1) (2) (3) (4) (5)
100
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
230
338
1.8
2.7
mW
THERMAL CHARACTERISTICS (SC−59) (MUN2130)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
540
370
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
264
287
°C/W
TJ, Tstg
−55 to +150
°C
246
400
2.0
3.2
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2130L)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
508
311
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
174
208
°C/W
TJ, Tstg
−55 to +150
°C
202
310
1.6
2.5
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5130)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
618
403
°C/W
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
280
332
°C/W
TJ, Tstg
−55 to +150
°C
200
300
1.6
2.4
mW
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA113EE)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
PD
mW/°C
RqJA
600
400
°C/W
TJ, Tstg
−55 to +150
°C
260
600
2.0
4.8
mW
THERMAL CHARACTERISTICS (SOT−723) (DTA113EM3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Derate above 25°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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3
PD
mW/°C
RqJA
480
205
°C/W
TJ, Tstg
−55 to +150
°C
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
254
297
2.0
2.4
mW
THERMAL CHARACTERISTICS (SOT−1123) (NSBA113EF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
(Note 3)
(Note 4)
Derate above 25°C
PD
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
RqJA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL
193
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm2, 1 oz. copper traces, still air.
FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
100
−
−
500
−
−
4.3
50
−
−
50
−
−
3.0
5.0
−
−
−
0.25
−
1.2
0.5
2.0
1.6
−
−
−
0.2
4.9
−
−
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 5.0 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.3 V, IC = 20 mA)
Vi(on)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Output Voltage (off)
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW)
VOH
Input Resistor
R1
0.7
1.0
1.3
Resistor Ratio
R1/R2
0.8
1.0
1.2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
Vdc
Vdc
Vdc
Vdc
Vdc
kW
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
HE
C
0.20 (0.008) E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
8
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
9
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
1
3
E
2
TOP VIEW
A
c
DIM
A
b
b1
c
D
E
e
HE
L
L2
HE
SIDE VIEW
3X
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
b
L2
0.08 X Y
e
2X
3X
b1
MILLIMETERS
MIN
MAX
0.34
0.40
0.15
0.28
0.10
0.20
0.07
0.17
0.75
0.85
0.55
0.65
0.35
0.40
0.95
1.05
0.185 REF
0.05
0.15
L
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTA113E/D