MUN2240, DTC144TM3 Digital Transistors (BRT) R1 = 47 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. PIN CONNECTIONS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAMS XX MG G SC−59 CASE 318D STYLE 1 1 MAXIMUM RATINGS (TA = 25°C) XX M 1 SOT−723 CASE 631AA STYLE 1 Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc (Note: Microdot may be in either location) Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 6 Vdc *Date Code orientation may vary depending upon manufacturing location. Rating Collector Current − Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 0 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: DTC144T/D MUN2240, DTC144TM3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† MUN2240T1G, SMUN2240T1G 8T SC−59 3,000 / Tape & Reel DTC144TM3T5G 8T SOT−723 8,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PD, POWER DISSIPATION (mW) 300 250 200 150 (1) SC−59; Minimum Pad (2) SOT−723; Minimum Pad (1) (2) 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2240) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−723) (DTC144TM3) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. http://onsemi.com 2 PD mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2240, DTC144TM3 Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.2 50 − − 50 − − 160 350 − − − 0.25 − 0.6 − − 3.0 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.2 V, IC = 10 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOH Input Resistor R1 32.9 47 61.1 Resistor Ratio R1/R2 − − − 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 3 Vdc Vdc Vdc Vdc Vdc kW MUN2240, DTC144TM3 TYPICAL CHARACTERISTICS − MUN2240, DTC144TM3 1000 150°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 1 0.1 150°C 25°C −55°C 0.01 0 10 20 10 30 40 1 50 1 100 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain 3.2 IC, COLLECTOR CURRENT (mA) 100 f = 10 kHz IE = 0 V TA = 25°C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10 IC, COLLECTOR CURRENT (mA) 10 20 30 40 −55°C 25°C 10 1 0.1 VO = 5 V 0.01 50 150°C 0 4 8 12 16 20 24 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) −55°C VCE = 10 V 3.6 0 25°C 100 10 −55°C 25°C 1 150°C 0.1 VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 28 MUN2240, DTC144TM3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 MUN2240, DTC144TM3 PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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