SPANSION S29AS016J

S29AS016J
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-Only Boot Sector Flash Memory
Data Sheet
S29AS016J Cover Sheet
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S29AS016J_00
Revision 11
Issue Date February 1, 2012
D at a
S hee t
Notice On Data Sheet Designations
Spansion Inc. issues data sheets with Advance Information or Preliminary designations to advise readers of
product information or intended specifications throughout the product life cycle, including development,
qualification, initial production, and full production. In all cases, however, readers are encouraged to verify
that they have the latest information before finalizing their design. The following descriptions of Spansion data
sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific
products, but has not committed any design to production. Information presented in a document with this
designation is likely to change, and in some cases, development on the product may discontinue. Spansion
Inc. therefore places the following conditions upon Advance Information content:
“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a commitment
to production has taken place. This designation covers several aspects of the product life cycle, including
product qualification, initial production, and the subsequent phases in the manufacturing process that occur
before full production is achieved. Changes to the technical specifications presented in a Preliminary
document should be expected while keeping these aspects of production under consideration. Spansion
places the following conditions upon Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. The Preliminary status of this document indicates that product qualification has been
completed, and that initial production has begun. Due to the phases of the manufacturing process that
require maintaining efficiency and quality, this document may be revised by subsequent versions or
modifications due to changes in technical specifications.”
Combination
Some data sheets contain a combination of products with different designations (Advance Information,
Preliminary, or Full Production). This type of document distinguishes these products and their designations
wherever necessary, typically on the first page, the ordering information page, and pages with the DC
Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal changes
are expected, the Preliminary designation is removed from the data sheet. Nominal changes may include
those affecting the number of ordering part numbers available, such as the addition or deletion of a speed
option, temperature range, package type, or VIO range. Changes may also include those needed to clarify a
description or to correct a typographical error or incorrect specification. Spansion Inc. applies the following
conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s)
described herein. Spansion Inc. deems the products to have been in sufficient production volume such
that subsequent versions of this document are not expected to change. However, typographical or
specification corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local sales office.
2
S29AS016J
S29AS016J_00_11 February 1, 2012
S29AS016J
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-Only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
 Single Power Supply Operation
– Full voltage range: 1.65 to 1.95 volt read and write operations for
battery-powered applications
 Manufactured on 110 nm Process Technology
– Backward compatible with 0.32 µm Am29SL160C device
 Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– May be programmed and locked at the factory or by the customer
 Flexible Sector Architecture
– Eight 8 Kbyte and thirty-one 64 Kbyte sectors (byte mode)
– Eight 4 Kword, and thirty-one 32 Kword sectors (word mode)
 Sector Group Protection Features
– A hardware method of locking a sector to prevent any program or
erase operations within that sector
– Sectors can be locked in-system or via programming equipment
– Temporary Sector Group Unprotect feature allows code changes in
previously locked sectors
 Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
command sequences
 Top or Bottom Boot Block Configurations Available
 Compatibility with JEDEC standards
– Pinout and software compatible with single-power supply Flash
– Superior inadvertent write protection
Performance Characteristics
 High Performance
–
–
–
–
 Ultra Low Power Consumption (typical values at 5 MHz)
–
–
–
–
15 µA Automatic Sleep mode current
8 µA standby mode current
8 mA read current
20 mA program/erase current
 Cycling Endurance: 1,000,000 cycles per sector typical
 Data Retention: 20 years typical
Package Options
 48-ball Fine-Pitch BGA, 8.15 mm x 6.15 mm
 48-ball Fine-Pitch BGA, 6.0 mm x 4.0 mm
 48-pin TSOP
Software Features
 CFI (Common Flash Interface) Compliant
– Provides device-specific information to the system, allowing host
software to easily reconfigure for different Flash devices
 Erase Suspend/Erase Resume
– Suspends an erase operation to read data from, or program data to,
a sector that is not being erased, then resumes the erase operation
 Data# Polling and Toggle Bits
– Provides a software method of detecting program or erase operation
completion
Hardware Features
 Ready/Busy# Pin (RY/BY#)
– Provides a hardware method of detecting program or erase cycle
completion
 Hardware Reset Pin (RESET#)
– Hardware method to reset the device to reading array data
Access times as fast as 70 ns
Industrial temperature range (-40°C to +85°C)
Automotive In-Cabin temperature range (-40°C to +105°C)
Word programming time as fast as 6 µs (typical)
Publication Number S29AS016J_00
 WP# input pin
– Write protect (WP#) function allows protection of two outermost
boot sectors (boot sector models only), regardless of sector group
protect status
Revision 11
Issue Date February 1, 2012
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur.
D at a
S hee t
General Description
The S29AS016J is a 16 Mbit, 1.8 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words
with a x8/x16 bus and either top or bottom boot sector architecture. The device is offered in 48-pin TSOP and
48-ball FBGA packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears
on DQ7–DQ0. This device is designed to be programmed and erased in-system with the standard system 1.8
volt VCC supply. A 12.0V VPP or 5.0 VCC are not required for program or erase operations. The device can
also be programmed in standard EPROM programmers.
The device offers access time of 70 ns allowing high speed microprocessors to operate without wait states. To
eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
The device requires only a single 1.8 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the program and erase operations.
The S29AS016J is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading
data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write
cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,
or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been
completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The hardware sector group protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode. The system can also place the device into the standby
mode. Power consumption is greatly reduced in both these modes.
Spansion’s Flash technology combines years of Flash memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
4
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Table of Contents
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1
Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2
FBGA Connection Diagram, 8.15 mm x 6.15 mm (VBK048) . . . . . . . . . . . . . . . . . . . . . . . . .
3.3
FBGA Connection Diagram, 6.0 mm x 4.0 mm (VDF048) . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.4
Special Handling Instructions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6.1
S29AS016J Standard Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
7.
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.1
Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.2
Requirements for Reading Array Data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.3
Writing Commands/Command Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.4
Program and Erase Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.5
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.6
Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.7
RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.8
Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.9
Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.10 Sector Address Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.11 Sector Group Protection/Unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.12 Temporary Sector Group Unprotect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.13 Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.14 Hardware Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.
Secured Silicon Sector Flash Memory Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.1
Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8.2
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected at the Factory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
9.
Common Flash Memory Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
10.
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.1 Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.2 Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.3 Autoselect Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.4 Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence . . . . . . . . .
10.5 Word/Byte Program Command Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.6 Unlock Bypass Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.7 Chip Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.8 Sector Erase Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.9 Erase Suspend/Erase Resume Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11.
Command Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
12.
Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.1 DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.2 RY/BY#: Ready/Busy#. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.3 DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.4 DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5 Reading Toggle Bits DQ6/DQ2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.6 DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
February 1, 2012 S29AS016J_00_11
S29AS016J
10
10
11
12
12
15
15
15
16
16
16
16
17
17
18
19
21
24
24
25
31
31
31
31
32
32
32
33
34
34
38
38
39
40
40
41
42
5
D at a
12.7
6
S hee t
DQ3: Sector Erase Timer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
13.
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
14.
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
15.
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
15.1 CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
16.
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
17.
Key to Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
18.
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18.1 Read Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18.2 Hardware Reset (RESET#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18.3 Word/Byte Configuration (BYTE#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18.4 Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18.5 Temporary Sector Group Unprotect. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18.6 Alternate CE# Controlled Erase/Program Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19.
Erase and Programming Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
20.
Package Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
21.
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21.1 TS 048 - 48-Pin Standard TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
21.2 VBK048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 mm x 6.15 mm . . . . . . . . . . . . . .
21.3 VDF048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6.00 mm x 4.00 mm . . . . . . . . . . . . . .
22.
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
S29AS016J
46
46
47
48
49
52
53
55
55
56
57
S29AS016J_00_11 February 1, 2012
Data
She et
Figures
Figure 7.1
Figure 7.2
Figure 8.1
Figure 10.1
Figure 10.2
Figure 12.1
Figure 12.2
Figure 14.1
Figure 14.2
Figure 16.1
Figure 17.1
Figure 18.1
Figure 18.2
Figure 18.3
Figure 18.4
Figure 18.5
Figure 18.6
Figure 18.7
Figure 18.8
Figure 18.9
Figure 18.10
Figure 18.11
Figure 18.12
In-System Sector Group Protect/Unprotect Algorithms . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Temporary Sector Group Unprotect Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Secured Silicon Sector Protect Verify . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Erase Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Data# Polling Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Toggle Bit Algorithm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Test Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Input Waveforms and Measurement Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Read Operations Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
RESET# Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
BYTE# Timings for Read Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
BYTE# Timings for Write Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Program Operation Timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Chip/Sector Erase Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Data# Polling Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Toggle Bit Timings (During Embedded Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
DQ2 vs. DQ6 for Erase and Erase Suspend Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Temporary Sector Group Unprotect/Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Sector Group Protect/Unprotect Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Alternate CE# Controlled Write Operation Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
February 1, 2012 S29AS016J_00_11
S29AS016J
7
D at a
S hee t
Tables
Table 7.1
Table 7.2
Table 7.3
Table 7.4
Table 7.5
Table 7.6
Table 9.1
Table 9.2
Table 9.3
Table 9.4
Table 11.1
Table 11.2
Table 12.1
Table 16.1
8
S29AS016J Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
S29AS016J Autoselect Codes (High Voltage Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Sector Address Tables (Top Boot Device) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Sector Address Tables (Bottom Boot Device) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
AS016J Top Boot Device Sector/Sector Group Protection . . . . . . . . . . . . . . . . . . . . . . . . . . .21
AS016J Bottom Boot Device Sector/Sector Group Protection . . . . . . . . . . . . . . . . . . . . . . . .22
CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
System Interface String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Primary Vendor-Specific Extended Query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
S29AS016J Command Definitions (Word Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
S29AS016J Command Definitions (Byte Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Write Operation Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Test Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
1.
She et
Product Selector Guide
Family Part Number
S29AS016J
Voltage Range: VCC = 1.65–1.95 V
Speed Option
70
Max access time, ns (tACC)
70
Max CE# access time, ns (tCE)
70
Max OE# access time, ns (tOE)
25
Note
See AC Characteristics on page 46 for full specifications.
2. Block Diagram
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
RESET#
WE#
BYTE#
WP#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
VCC Detector
Address Latch
OE#
Timer
A0–A19
February 1, 2012 S29AS016J_00_11
S29AS016J
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
9
D at a
3.
Connection Diagrams
3.1
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
10
S hee t
Standard TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
S29AS016J
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
S29AS016J_00_11 February 1, 2012
Data
3.2
She et
FBGA Connection Diagram, 8.15 mm x 6.15 mm (VBK048)
Fine-pitch Ball Grid Array - VBK048
Top View, Balls Facing Down
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
A19
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
WP#
A18
NC
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
February 1, 2012 S29AS016J_00_11
S29AS016J
F6
G6
BYTE# DQ15/A-1
H6
VSS
11
D at a
3.3
S hee t
FBGA Connection Diagram, 6.0 mm x 4.0 mm (VDF048)
Fine-pitch Ball Grid Array - VDF048
Top View, Balls Facing Down
A
B
C
D
E
F
G
H
J
K
L
A2
A4
A6
A17
NC
NC
WE#
RESET#
A9
A11
A1
A3
A7
WP#
RY/BY#
A10
A13
A14
A0
A5
A18
A8
A12
A15
CE#
DQ8
DQ10
DQ4
DQ11
A16
VSS
OE#
DQ9
A19
NC
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ13
DQ14
DQ15
VSS
6
5
4
3
2
1
3.4
DQ3
VCC
DQ12
Special Handling Instructions
Special handling is required for Flash Memory products in BGA packages.
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
12
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
4.
She et
Pin Configuration
A0–A19
DQ0–DQ14
DQ15/A-1
BYTE#
20 addresses
15 data inputs/outputs
DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode)
Selects 8-bit or 16-bit mode
CE#
Chip enable
OE#
Output enable
WE#
Write enable
WP#
Write protect: The WP# contains an internal pull-up; when unconnected, WP is at VIH.
RESET#
Hardware reset pin
RY/BY#
Ready/Busy output
VCC
1.8 volt-only single power supply (see Product Selector Guide on page 9 for speed options and voltage supply
tolerances)
VSS
Device ground
NC
Pin not connected internally
5. Logic Symbol
20
A0–A19
16 or 8
DQ0–DQ15
(A-1)
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
WP#
February 1, 2012 S29AS016J_00_11
S29AS016J
13
D at a
6.
6.1
S hee t
Ordering Information
S29AS016J Standard Products
Spansion standard products are available in several packages and operating ranges. The order number
(Valid Combination) is formed by a combination of the elements below.
S29AS016J
70
T
F
I
01
0
Packing Type
0 = Tray
2 = 7” Tape and Reel
3 = 13” Tape and Reel
Model Number
01 = VCC = 1.65–1.95 V, top boot sector device (Note 3)
02 = VCC = 1.65–1.95 V, bottom boot sector device (Note 3)
03 = VCC = 1.65–1.95 V, top boot sector device
04 = VCC = 1.65–1.95 V, bottom boot sector device
F3 = VCC = 1.65–1.95 V, x16 only, 6.0x4.0 mm FBGA,
top boot sector device
F4 = VCC = 1.65–1.95 V, x16 only, 6.0x4.0 mm FBGA,
bottom boot sector device
Temperature Range
I = Industrial (-40°C to +85°C)
V = Automotive In-Cabin (-40°C to +105°C)
Package Material Set
F = Pb-Free
H = Low-Halogen, Pb-Free
Package Type
T = Thin Small Outline Package (TSOP) Standard Pinout
B = Fine-pitch Ball-Grid Array Package
Speed Option
70 = 70 ns Access Speed
90 = 90 ns Access Speed
Device Number/Description
S29AS016J
16 Megabit Flash Memory manufactured using 110 nm process technology
1.8 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local
sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
S29AS016J Valid Combinations
Device
Number
Speed
Option
Package Type, Material, and
Temperature Range
Model
Number
TFI
BFI, BHI
01, 02, 03, 04
(Note 3)
BHI
F3, F4
Package
Description
Packing Type
0, 3 (Note 1)
TS048 (Note 2)
TSOP
VBK048
70
S29AS016J
VDF048
Fine-Pitch BGA
(Note 4)
0, 2, 3 (Note 1)
90
BFV, BHV
03, 04
VBK048
BFV, BHV
03, 04
VBK048
Notes
1. Type 0 is standard. Specify other options as required.
2. TSOP package markings omit packing type designator from ordering part number.
3. Model numbers 01 and 02 are deprecated. Please use the equivalent 03 and 04 model numbers instead.
4. BGA package marking omits leading “S29” and packing type designator from ordering part number.
14
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
7.
She et
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is composed of latches that store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the device. Table 7.1 lists the device bus operations, the
inputs and control levels they require, and the resulting output. The following subsections describe each of
these operations in further detail.
Table 7.1 S29AS016J Device Bus Operations
DQ8–DQ15
Operation
CE#
OE#
WE#
RESET#
WP#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
DQ8–DQ14 = High-Z,
DQ15 = A-1
Read
L
L
H
H
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 3)
AIN
DIN
DIN
VCC ±
0.2 V
X
X
VCC ±
0.2 V
H
X
High-Z
High-Z
Output Disable
L
H
H
H
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
VID
X
Sector Address,
A6 = L, A3 = A2 = L,
A1 = H, A0 = L
DIN
X
X
Sector GroupUnprotect
(Note 2)
L
H
L
VID
H
Sector Address,
A6 = H, A3 = A2 = L,
A1 = H, A0 = L
DIN
X
X
Temporary Sector
Group Unprotect
X
X
X
VID
H
AIN
DIN
DIN
High-Z
Standby
High-Z
Legend
L = Logic Low = VIL, H = Logic High = VIH, VID = 9.0 - 11.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes
1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL).
2. The sector group protect and sector group unprotect functions may also be implemented via programming equipment. See Sector Group
Protection/Unprotection on page 21.
3. If WP# = VIL, the two outermost boot sectors remain protected. If WP# = VIH, the two outermost boot sector group protection depends on
whether they were last protected or unprotected.
7.1
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word
configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ15–DQ0 are active and
controlled by CE# and OE#.
If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used
as an input for the LSB (A-1) address function.
7.2
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE# should
remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the device data outputs. The device remains enabled for
read access until the command register contents are altered.
See Reading Array Data on page 31 for more information. Refer to the AC Read Operations on page 46 for
timing specifications and to Figure 18.1 on page 46 for the timing diagram. ICC1 in DC Characteristics
on page 44 represents the active current specification for reading array data.
February 1, 2012 S29AS016J_00_11
S29AS016J
15
D at a
7.3
S hee t
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or
words. See Word/Byte Configuration on page 15 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. Word/
Byte Program Command Sequence on page 32 has details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 7.3 on page 19 and
Table 7.4 on page 20 indicate the address space that each sector occupies. A “sector address” consists of
the address bits required to uniquely select a sector. The Command Definitions on page 31 has details on
erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to Autoselect Mode on page 18 and
Autoselect Command Sequence on page 31 for more information.
ICC2 in DC Characteristics on page 44 represents the active current specification for the write mode. AC
Characteristics on page 46 contains timing specification tables and timing diagrams for write operations.
7.4
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings and ICC read specifications apply. Refer to Write
Operation Status on page 38 for more information, and to AC Characteristics on page 46 for timing diagrams.
7.5
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.2 V.
(Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.2 V, the device will be in the standby mode, but the standby current will be greater. The device
requires standard access time (tCE) for read access when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
ICC3 and ICC4 represents the standby current specification shown in the table in DC Characteristics
on page 44.
7.6
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. ICC5 in the DC
Characteristics on page 44 represents the automatic sleep mode current specification.
16
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
7.7
She et
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the system
drives the RESET# pin to VIL for at least a period of tRP, the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was
interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure
data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.2 V, the device
draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.2 V, the standby current
will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory. Note that the CE# pin
should only go to VIL after RESET# has gone to VIH. Keeping CE# at VIL from power up through the first read
could cause the first read to retrieve erroneous data.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy) until the
internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is 1), the reset operation is
completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to the tables in AC Characteristics on page 46 for RESET# parameters and to Figure 18.2 on page 47
for the timing diagram. If VID (9.0 V – 11.0 V) is applied to the RESET# pin, the device will enter the
Temporary Sector Group Unprotect mode. See Temporary Sector Group Unprotect on page 24 for more
details on this feature.
7.8
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high
impedance state.
February 1, 2012 S29AS016J_00_11
S29AS016J
17
D at a
7.9
S hee t
Autoselect Mode
The autoselect mode provides manufacturer and device identification, sector group protection verification,
and Secured Silicon Sector status through identifier codes output on DQ7–DQ0. This mode is primarily
intended for programming equipment to automatically match a device to be programmed with its
corresponding programming algorithm. However, the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect mode requires VID (9.0 V to 11.0 V) on address pin A9.
Address pins A6, A3, A2, A1, and A0 must be as shown in Table 7.2. In addition, when verifying sector group
protection, the sector address must appear on the appropriate highest order address bits (see Table 7.3
on page 19 and Table 7.4 on page 20). Table 7.2 shows the remaining address bits that are don’t care. When
all necessary bits have been set as required, the programming equipment may then read the corresponding
identifier code on DQ7-DQ0.
To access the autoselect codes in-system, the host system can issue the autoselect command via the
command register, as shown in Table 11.1 on page 36. This method does not require VID. See Command
Definitions on page 31 for details on using the autoselect mode.
Table 7.2 S29AS016J Autoselect Codes (High Voltage Method)
Description
Manufacturer ID:
Spansion
Device ID
CE#
OE#
WE#
A19
to
A12
L
L
H
X
A11
to
A10
DQ8 to DQ15
A0
BYTE =
VIH
BYTE =
VIL
DQ7
to
DQ0
L
L
00h
X
01h
7Eh
A6
A5
to
A4
A3
to
A2
A1
X
L
X
L
A9
A8
to
A7
X
VID
Cycle 1
L
L
H
X
X
VID
X
L
X
L
L
H
22h
X
Cycle 2
L
L
H
X
X
VID
X
L
X
H
H
L
22h
X
03h
L
L
H
X
X
VID
X
L
X
H
H
H
22h
X
04h (Top Boot),
03h (Bottom Boot)
Sector Group Protection
Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon Sector
Indicator Bit (DQ7), WP#
protects highest address
sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
89h (factory locked),
09h (not factory locked)
Secured Silicon Sector
Indicator Bit (DQ7), WP#
protects lowest address
sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
91h (factory locked),
11h (not factory locked)
Cycle 3
Legend
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care
Note
The autoselect codes may also be accessed in-system via command sequences. See Table 11.1 on page 36.
18
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
7.10
She et
Sector Address Tables
Table 7.3 Sector Address Tables (Top Boot Device)
Address Range (in hexadecimal)
Sector
A19
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
0
0
X
X
X
64/32
000000–00FFFF
00000–07FFF
SA1
0
0
0
0
1
X
X
X
64/32
010000–01FFFF
08000–0FFFF
SA2
0
0
0
1
0
X
X
X
64/32
020000–02FFFF
10000–17FFF
SA3
0
0
0
1
1
X
X
X
64/32
030000–03FFFF
18000–1FFFF
SA4
0
0
1
0
0
X
X
X
64/32
040000–04FFFF
20000–27FFF
SA5
0
0
1
0
1
X
X
X
64/32
050000–05FFFF
28000–2FFFF
SA6
0
0
1
1
0
X
X
X
64/32
060000–06FFFF
30000–37FFF
SA7
0
0
1
1
1
X
X
X
64/32
070000–07FFFF
38000–3FFFF
SA8
0
1
0
0
0
X
X
X
64/32
080000–08FFFF
40000–47FFF
SA9
0
1
0
0
1
X
X
X
64/32
090000–09FFFF
48000–4FFFF
SA10
0
1
0
1
0
X
X
X
64/32
0A0000–0AFFFF
50000–57FFF
SA11
0
1
0
1
1
X
X
X
64/32
0B0000–0BFFFF
58000–5FFFF
SA12
0
1
1
0
0
X
X
X
64/32
0C0000–0CFFFF
60000–67FFF
SA13
0
1
1
0
1
X
X
X
64/32
0D0000–0DFFFF
68000–6FFFF
SA14
0
1
1
1
0
X
X
X
64/32
0E0000–0EFFFF
70000–77FFF
SA15
0
1
1
1
1
X
X
X
64/32
0F0000–0FFFFF
78000–7FFFF
SA16
1
0
0
0
0
X
X
X
64/32
100000–10FFFF
80000–87FFF
SA17
1
0
0
0
1
X
X
X
64/32
110000–11FFFF
88000–8FFFF
SA18
1
0
0
1
0
X
X
X
64/32
120000–12FFFF
90000–97FFF
SA19
1
0
0
1
1
X
X
X
64/32
130000–13FFFF
98000–9FFFF
SA20
1
0
1
0
0
X
X
X
64/32
140000–14FFFF
A0000–A7FFF
SA21
1
0
1
0
1
X
X
X
64/32
150000–15FFFF
A8000–AFFFF
SA22
1
0
1
1
0
X
X
X
64/32
160000–16FFFF
B0000–B7FFF
SA23
1
0
1
1
1
X
X
X
64/32
170000–17FFFF
B8000–BFFFF
SA24
1
1
0
0
0
X
X
X
64/32
180000–18FFFF
C0000–C7FFF
SA25
1
1
0
0
1
X
X
X
64/32
190000–19FFFF
C8000–CFFFF
SA26
1
1
0
1
0
X
X
X
64/32
1A0000–1AFFFF
D0000–D7FFF
SA27
1
1
0
1
1
X
X
X
64/32
1B0000–1BFFFF
D8000–DFFFF
SA28
1
1
1
0
0
X
X
X
64/32
1C0000–1CFFFF
E0000–E7FFF
SA29
1
1
1
0
1
X
X
X
64/32
1D0000–1DFFFF
E8000–EFFFF
SA30
1
1
1
1
0
X
X
X
64/32
1E0000–1EFFFF
F0000–F7FFF
SA31
1
1
1
1
1
0
0
0
8/4
1F0000–1F1FFF
F8000–F8FFF
SA32
1
1
1
1
1
0
0
1
8/4
1F2000–1F3FFF
F9000–F9FFF
SA33
1
1
1
1
1
0
1
0
8/4
1F4000–1F5FFF
FA000–FAFFF
SA34
1
1
1
1
1
0
1
1
8/4
1F6000–1F7FFF
FB000–FBFFF
SA35
1
1
1
1
1
1
0
0
8/4
1F8000–1F9FFF
FC000–FCFFF
SA36
1
1
1
1
1
1
0
1
8/4
1FA000–1FBFFF
FD000–FDFFF
SA37
1
1
1
1
1
1
1
0
8/4
1FC000–1FDFFF
FE000–FEFFF
SA38
1
1
1
1
1
1
1
1
8/4
1FE000–1FFFFF
FF000–FFFFF
Byte Mode (x8)
Word Mode (x16)
Note
Address range is A19:A-1 in byte mode and A19:A0 in word mode. See Word/Byte Configuration on page 15.
February 1, 2012 S29AS016J_00_11
S29AS016J
19
D at a
S hee t
Table 7.4 Sector Address Tables (Bottom Boot Device)
Address Range (in hexadecimal)
Sector
A19
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
Byte Mode (x8)
Word Mode (x16)
SA0
0
0
0
0
0
0
0
0
8/4
000000–001FFF
00000–00FFF
SA1
0
0
0
0
0
0
0
1
8/4
002000–003FFF
01000–01FFF
SA2
0
0
0
0
0
0
1
0
8/4
004000–005FFF
02000–02FFF
SA3
0
0
0
0
0
0
1
1
8/4
006000–007FFF
03000–03FFF
SA4
0
0
0
0
0
1
0
0
8/4
008000–009FFF
04000–04FFF
SA5
0
0
0
0
0
1
0
1
8/4
00A000–00BFFF
05000–05FFF
SA6
0
0
0
0
0
1
1
0
8/4
00C000–00DFFF
06000–06FFF
SA7
0
0
0
0
0
1
1
1
8/4
00E000–00FFFF
07000–07FFF
SA8
0
0
0
0
1
X
X
X
64/32
010000–01FFFF
08000–0FFFF
SA9
0
0
0
1
0
X
X
X
64/32
020000–02FFFF
10000–17FFF
SA10
0
0
0
1
1
X
X
X
64/32
030000–03FFFF
18000–1FFFF
SA11
0
0
1
0
0
X
X
X
64/32
040000–04FFFF
20000–27FFF
SA12
0
0
1
0
1
X
X
X
64/32
050000–05FFFF
28000–2FFFF
SA13
0
0
1
1
0
X
X
X
64/32
060000–06FFFF
30000–37FFF
SA14
0
0
1
1
1
X
X
X
64/32
070000–07FFFF
38000–3FFFF
SA15
0
1
0
0
0
X
X
X
64/32
080000–08FFFF
40000–47FFF
SA16
0
1
0
0
1
X
X
X
64/32
090000–09FFFF
48000–4FFFF
SA17
0
1
0
1
0
X
X
X
64/32
0A0000–0AFFFF
50000–57FFF
SA18
0
1
0
1
1
X
X
X
64/32
0B0000–0BFFFF
58000–5FFFF
SA19
0
1
1
0
0
X
X
X
64/32
0C0000–0CFFFF
60000–67FFF
SA20
0
1
1
0
1
X
X
X
64/32
0D0000–0DFFFF
68000–6FFFF
SA21
0
1
1
1
0
X
X
X
64/32
0E0000–0EFFFF
70000–77FFF
SA22
0
1
1
1
1
X
X
X
64/32
0F0000–0FFFFF
78000–7FFFF
SA23
1
0
0
0
0
X
X
X
64/32
100000–10FFFF
80000–87FFF
SA24
1
0
0
0
1
X
X
X
64/32
110000–11FFFF
88000–8FFFF
SA25
1
0
0
1
0
X
X
X
64/32
120000–12FFFF
90000–97FFF
SA26
1
0
0
1
1
X
X
X
64/32
130000–13FFFF
98000–9FFFF
SA27
1
0
1
0
0
X
X
X
64/32
140000–14FFFF
A0000–A7FFF
SA28
1
0
1
0
1
X
X
X
64/32
150000–15FFFF
A8000–AFFFF
SA29
1
0
1
1
0
X
X
X
64/32
160000–16FFFF
B0000–B7FFF
SA30
1
0
1
1
1
X
X
X
64/32
170000–17FFFF
B8000–BFFFF
SA31
1
1
0
0
0
X
X
X
64/32
180000–18FFFF
C0000–C7FFF
SA32
1
1
0
0
1
X
X
X
64/32
190000–19FFFF
C8000–CFFFF
SA33
1
1
0
1
0
X
X
X
64/32
1A0000–1AFFFF
D0000–D7FFF
SA34
1
1
0
1
1
X
X
X
64/32
1B0000–1BFFFF
D8000–DFFFF
SA35
1
1
1
0
0
X
X
X
64/32
1C0000–1CFFFF
E0000–E7FFF
SA36
1
1
1
0
1
X
X
X
64/32
1D0000–1DFFFF
E8000–EFFFF
SA37
1
1
1
1
0
X
X
X
64/32
1E0000–1EFFFF
F0000–F7FFF
SA38
1
1
1
1
1
X
X
X
64/32
1F0000–1FFFFF
F8000–FFFFF
Note
Address range is A19:A-1 in byte mode and A19:A0 in word mode. See the Word/Byte Configuration on page 15.
20
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
7.11
She et
Sector Group Protection/Unprotection
The hardware sector group protection feature disables both program and erase operations in any sector
group (see Table 7.3 on page 19 to Table 7.6 on page 22). The hardware sector group unprotection feature
re-enables both program and erase operations in previously protected sector groups. Sector group
protection/unprotection can be implemented via two methods.
Sector group protection/unprotection requires VID on the RESET# pin only, and can be implemented either
in-system or via programming equipment. Figure 7.1 on page 23 shows the algorithms and Figure 18.1
on page 46 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For
sector group unprotect, all unprotected sector groups must first be protected prior to the first sector group
unprotect write cycle.
The device is shipped with all sector groups unprotected. Spansion offers the option of programming and
protecting sector groups at its factory prior to shipping the device through Spansion Programming Service.
Contact a Spansion representative for details.
It is possible to determine whether a sector group is protected or unprotected. See Autoselect Mode
on page 18 for details.
Table 7.5 AS016J Top Boot Device Sector/Sector Group Protection
Sector / Sector Block
A19
A18
A17
A16
A15
A14
A13
A12
Sector / Sector Block Size
SA0-SA3
0
0
0
X
X
X
X
X
256 (4x64) Kbytes
SA4-SA7
0
0
1
X
X
X
X
X
256 (4x64) Kbytes
SA8-SA11
0
1
0
X
X
X
X
X
256 (4x64) Kbytes
SA12-SA15
0
1
1
X
X
X
X
X
256 (4x64) Kbytes
SA16-SA19
1
0
0
X
X
X
X
X
256 (4x64) Kbytes
SA20-SA23
1
0
1
X
X
X
X
X
256 (4x64) Kbytes
SA24-SA27
1
1
0
X
X
X
X
X
256 (4x64) Kbytes
SA28-SA29
1
1
1
0
X
X
X
X
128 (2x64) Kbytes
SA30
1
1
1
1
0
X
X
X
64 Kbytes
SA31
1
1
1
1
1
0
0
0
8 Kbytes
SA32
1
1
1
1
1
0
0
1
8 Kbytes
SA33
1
1
1
1
1
0
1
0
8 Kbytes
SA34
1
1
1
1
1
0
1
1
8 Kbytes
SA35
1
1
1
1
1
1
0
0
8 Kbytes
SA36
1
1
1
1
1
1
0
1
8 Kbytes
SA37
1
1
1
1
1
1
1
0
8 Kbytes
SA38
1
1
1
1
1
1
1
1
8 Kbytes
February 1, 2012 S29AS016J_00_11
S29AS016J
21
D at a
S hee t
Table 7.6 AS016J Bottom Boot Device Sector/Sector Group Protection
22
Sector / Sector Block
A19
A18
A17
A16
A15
A14
A13
A12
Sector / Sector Block Size
SA0
0
0
0
0
0
0
0
0
8 Kbytes
SA1
0
0
0
0
0
0
0
1
8 Kbytes
SA2
0
0
0
0
0
0
1
0
8 Kbytes
SA3
0
0
0
0
0
0
1
1
8 Kbytes
SA4
0
0
0
0
0
1
0
0
8 Kbytes
SA5
0
0
0
0
0
1
0
1
8 Kbytes
SA6
0
0
0
0
0
1
1
0
8 Kbytes
SA7
0
0
0
0
0
1
1
1
8 Kbytes
SA8
0
0
0
0
1
X
X
X
64 Kbytes
SA9-SA10
0
0
0
1
X
X
X
X
128 (2x64) Kbytes
SA11-SA14
0
0
1
X
X
X
X
X
256 (4x64) Kbytes
SA15-SA18
0
1
0
X
X
X
X
X
256 (4x64) Kbytes
SA19-SA22
0
1
1
X
X
X
X
X
256 (4x64) Kbytes
SA23-SA26
1
0
0
X
X
X
X
X
256 (4x64) Kbytes
SA27-SA30
1
0
1
X
X
X
X
X
256 (4x64) Kbytes
SA31-SA34
1
1
0
X
X
X
X
X
256 (4x64) Kbytes
SA35-SA38
1
1
1
X
X
X
X
X
256 (4x64) Kbytes
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Figure 7.1 In-System Sector Group Protect/Unprotect Algorithms
START
START
Protect all sectors:
The indicated portion
of the sector group
protect algorithm
must be performed
for all unprotected
sector groups prior
to issuing the first
sector group
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Group Unprotect Mode
No
First Write
Cycle = 60h?
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
Temporary Sector
Group Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Group Protect:
Write 60h to sector
address with
A6 = 0,
A3 = A2 = 0,
A1 = 1, A0 = 0
Yes
Set up first sector
group address
Sector Group Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 100 µs
Increment
PLSCNT
Verify Sector Group
Protect: Write 40h
to sector address
with A6 = 0,
A3 = A2 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 10 ms
Read from
sector address
with A6 = 0,
A3 = A2 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
Verify Sector Group
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 1,
A3 = A2 = 0,
A1 = 1, A0 = 0
No
No
PLSCNT
= 25?
Data = 01h?
No
PLSCNT
= 1000?
Yes
Device failed
Set up
next sector
address
Yes
Yes
Protect another
sector?
Yes
No
Data = 00h?
Yes
No
Remove VID
from RESET#
Device failed
Last sector
group verified?
No
Yes
Write reset
command
Sector Group
Protect Algorithm
Sector Group
Protect complete
Sector Group
Unprotect Algorithm
Remove VID
from RESET#
Write reset
command
Sector Group
Unprotect complete
Note
If WP# = VIL, the top or bottom two address sectors remains protected for boot sector devices).
February 1, 2012 S29AS016J_00_11
S29AS016J
23
D at a
7.12
S hee t
Temporary Sector Group Unprotect
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Group Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly
protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed
from the RESET# pin, all the previously protected sectors are protected again. Figure 7.2 shows the
algorithm, and Figure 18.10 on page 52 shows the timing diagrams, for this feature. If the WP# pin is at VIL,
the sectors protected by the WP# input will remain protected during the Temporary Sector Group Unprotect
mode.
Figure 7.2 Temporary Sector Group Unprotect Operation
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector Group
Unprotect Completed
(Note 2)
Notes
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected once again.
7.13
Write Protect (WP#)
The Write Protect function provides a hardware method of protecting certain boot sectors without using VID.
This function is one of two provided by the WP# pin.
If the system asserts VIL on the WP# pin, the device disables program and erase functions in the two
outermost 8-Kbyte boot sectors independently of whether those sectors were protected or unprotected using
the method described in Section 7.11, Sector Group Protection/Unprotection on page 21. The two outermost
8-Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device,
or the two sectors containing the highest addresses in a top-boot-configured device.
If the system asserts VIH on the WP# pin, the device reverts to whether the two outermost 8-KByte boot
sectors were last set to be protected or unprotected. That is, sector group protection or unprotection for these
two sectors depends on whether they were last protected or unprotected using the method described in
Section 7.11.
The WP# contains an internal pull-up; when unconnected, WP is at VIH.
24
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
7.14
She et
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection
against inadvertent writes (refer to Table 11.1 on page 36 for command definitions). In addition, the following
hardware data protection measures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during VCC power-up and power-down transitions, or from system
noise.
7.14.1
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and all internal program/erase circuits are disabled, and
the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
7.14.2
Write Pulse Glitch Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
7.14.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero (VIL) while OE# is a logical one (VIH).
7.14.4
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to reading array data on power-up.
February 1, 2012 S29AS016J_00_11
S29AS016J
25
D at a
S hee t
8. Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a 256-byte Flash memory region that enables permanent part
identification through an Electronic Serial Number (ESN). The Secured Silicon Sector uses a Secured Silicon
Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is locked when shipped from
the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a
factory-locked part. This ensures the security of the ESN once the product is shipped to the field.
Spansion offers the device with the Secured Silicon Sector either factory-locked or customer-lockable. The
factory-locked version is always protected when shipped from the factory, and has the Secured Silicon Sector
Indicator Bit permanently set to a 1. The customer-lockable version is shipped with the Secured Silicon
Sector group unprotected, allowing customers to utilize the that sector in any manner they choose. The
customer-lockable version has the Secured Silicon Sector Indicator Bit permanently set to a 0. Thus, the
Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices
that are factory locked.
The system accesses the Secured Silicon Sector through a command sequence (see Enter Secured Silicon
Sector/Exit Secured Silicon Sector Command Sequence on page 32). After the system writes the Enter
Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses
normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit
Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the boot sectors.
8.1
Factory Locked: Secured Silicon Sector Programmed
and Protected at the Factory
In a factory locked device, the Secured Silicon Sector is protected when the device is shipped from the
factory. The Secured Silicon Sector cannot be modified in any way. The device is available pre-programmed
with one of the following:
 A random, secure ESN only.
 Customer code through the ExpressFlash service.
 Both a random, secure ESN and customer code through the ExpressFlash service.
In devices that have an ESN, a Bottom Boot device has the 16-byte (8-word) ESN in sector 0 at addresses
00000h–0000Fh in byte mode (or 00000h–00007h in word mode). In the Top Boot device, the ESN is in
sector 38 at addresses 1FFFF0–1FFFFF in byte mode (or FFFF8–FFFFF in word mode).
Customers may opt to have their code programmed by Spansion through the Spansion ExpressFlash
service. Spansion programs the customer’s code, with or without the random ESN. The devices are then
shipped from the Spansion factory with the Secured Silicon Sector permanently locked. Contact a Spansion
representative for details on using the Spansion ExpressFlash service.
8.2
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected at the Factory
The customer lockable version allows the Secured Silicon Sector to be programmed once, and then
permanently locked after it ships from Spansion. Note that the unlock bypass function is not available when
programming the Secured Silicon Sector.
The Secured Silicon Sector area can be protected using the following procedures:
 Write the three-cycle Enter Secured Silicon Region command sequence, and then follow the in-system
sector group protect algorithm as shown in Figure 7.1 on page 23, substituting the sector group address
with the Secured Silicon Sector group address (A0=0, A1=1, A2=0, A3=1, A4=1, A5=0, A6=0, A7=0). This
allows in-system protection of the Secured Silicon Sector without raising any device pin to a high voltage.
Note that this method is only applicable to the Secured Silicon Sector.
 To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in
Figure 8.1 on page 27.
Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector
Region command sequence to return to reading and writing the remainder of the array.
26
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
The Secured Silicon Sector protection must be used with caution since, once protected, there is no procedure
available for unprotecting the Secured Silicon Sector area, and none of the bits in the Secured Silicon Sector
memory space can be modified in any way.
Figure 8.1 Secured Silicon Sector Protect Verify
START
RESET# = VID
Wait 1 ms
Write 60h to
any address
Write 40h to
Secured Silicon
Sector address
with A0=0, A1=1,
A2=0, A3=1, A4=1,
A5=0, A6=0, A7=0
Read from
Secured Silicon
Sector address
with A0=0, A1=1,
A2=0, A3=1, A4=1,
A5=0, A6=0, A7=0
February 1, 2012 S29AS016J_00_11
S29AS016J
If data = 00h,
Secured Silicon
Sector is
unprotected.
If data = 01h,
Secured Silicon
Sector is
protected.
Remove VID
from RESET#
Write reset
command
Secured Silicon
Sector Protect
Verify complete
27
D at a
9.
S hee t
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system
can read CFI information at the addresses given in Table 9.1 to Table 9.4 on page 30. In word mode, the
upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Table 9.1 to
Table 9.4 on page 30. The system must write the reset command to return the device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact a Spansion
representative for copies of these documents.
Table 9.1 CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
Table 9.2 System Interface String
Addresses
(Word Mode)
28
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0003h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Table 9.3 Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
27h
4Eh
0015h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
001Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
February 1, 2012 S29AS016J_00_11
Description
S29AS016J
29
D at a
S hee t
Table 9.4 Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
000Ch
Address Sensitive Unlock
0 = Required
Description
1 = Not Required
46h
8Ch
0002h
Erase Suspend
0 = Not Supported
1 = To Read Only
2 = To Read & Write
47h
8Eh
0001h
Sector Group Protect
0 = Not Supported
0001h
Sector Group Temporary Unprotect
00 = Not Supported
X= Number of sectors in smallest sector group
48h
90h
01 = Supported
Sector Group Protect/Unprotect scheme
01 = 29F040 mode
49h
92h
0004h
02 = 29F016 mode,
03 = 29F400 mode
04 = 29LV800A mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported
01 = Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported
01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported
01 = 4 Word Page
02 = 8 Word Page
ACC (Acceleration) Supply Minimum
4Dh
9Ah
0000h
00 = Not Supported
D7-D4: Volt
D3-D0: 100 mV
4Eh
9Ch
0000h
ACC (Acceleration) Supply Maximum
00 = Not Supported
D7-D4: Volt
D3-D0: 100 mV
4Fh
9Eh
00XXh
50h
A0h
0000h
WP# Protection
02 = Bottom Boot Device with WP Protect
03 = Top Boot Device with WP Protect
Program Suspend
00 = Not Supported
01 = Supported
30
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
10. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 11.1 on page 36 defines the valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in AC
Characteristics on page 46.
10.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase
Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/
Erase Resume Commands on page 34 for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or
while in the autoselect mode. See Reset Command on page 31.
See also Requirements for Reading Array Data on page 15 for more information. The Read Operations
on page 46 provides the read parameters, and Figure 18.1 on page 46 shows the timing diagram.
10.2
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data. Once erasure begins, however, the device
ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before
programming begins. This resets the device to reading array data (also applies to programming in Erase
Suspend mode). Once programming begins, however, the device ignores reset commands until the operation
is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
reading array data (also applies during Erase Suspend).
10.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes,
and determine whether or not a sector is protected. Table 11.1 on page 36 shows the address and data
requirements. This method is an alternative to that shown in Table 7.2 on page 18, which is intended for
PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect mode, and the system may read at any address any
number of times, without initiating another command sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA) and the address 02h in word mode (or 04h in byte
mode) returns 01h if that sector is protected, or 00h if it is unprotected. Refer to Table 7.3 on page 19 and
Table 7.4 on page 20 for valid sector addresses.
The system must write the reset command to exit the autoselect mode and return to reading array data.
February 1, 2012 S29AS016J_00_11
S29AS016J
31
D at a
10.4
S hee t
Enter Secured Silicon Sector/Exit Secured Silicon Sector Command
Sequence
The Secured Silicon Sector region provides a secured data area containing a random, sixteen-byte electronic
serial number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle
Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon
Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit
Secured Silicon Sector command sequence returns the device to normal operation. Table 11.1 shows the
addresses and data requirements for both command sequences. Note that the unlock bypass mode is not
available when the device enters the Secured Silicon Sector. For further information, see Secured Silicon
Sector Flash Memory Region on page 26.
10.5
Word/Byte Program Command Sequence
The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming
is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles,
followed by the program set-up command. The program address and data are written next, which in turn
initiate the Embedded Program algorithm. The system is not required to provide further controls or timings.
The device automatically generates the program pulses and verifies the programmed cell margin. Table 11.1
on page 36 shows the address and data requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to reading array data and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See Write Operation Status on page 38 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation. The Byte Program command sequence
should be reinitiated once the device has reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from
a 0 back to a 1. Attempting to do so may halt the operation and set DQ5 to 1, or cause the Data# Polling
algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still
0. Only erase operations can convert a 0 to a 1.
10.6
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than using the
standard program command sequence. The unlock bypass command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 11.1 on page 36 shows the
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are
valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command
sequence. The first cycle must contain the data 90h; the second cycle the data F0h. Addresses are don’t care
for both cycles. The device then returns to reading array data.
Figure 10.1 on page 33 illustrates the algorithm for the program operation. See Erase/Program Operations
on page 49 for parameters, and to Figure 18.5 on page 49 for timing diagrams.
32
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Figure 10.1 Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note
See Table 11.1 on page 36 for program command sequence.
10.7
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations. Table 11.1 on page 36 shows the address and data requirements
for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command
sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See Write
Operation Status on page 38 for information on these status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data and addresses are no longer latched.
Figure 10.2 on page 35 illustrates the algorithm for the erase operation. See Erase/Program Operations
on page 49 for parameters, and Figure 18.6 on page 50 for timing diagrams.
February 1, 2012 S29AS016J_00_11
S29AS016J
33
D at a
10.8
S hee t
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector erase command. Table 11.1 on page 36 shows the
address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase. The Embedded Erase
algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may
be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between
these additional cycles must be less than 50 µs, otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array data. The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See DQ3: Sector Erase
Timer on page 42.) The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the sector erase operation immediately terminates the
operation. The Sector Erase command sequence should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses
are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. (Refer to Write Operation Status on page 38 for information on these status bits.)
Figure 10.2 on page 35 illustrates the algorithm for the erase operation. Refer to Erase/Program Operations
on page 49 for parameters, and to Figure 18.6 on page 50 for timing diagrams.
10.9
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm.
Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out
period and suspends the erase operation. Addresses are don’t-cares when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 35 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the system can read array data from or program data to any
sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read
and write timings and command definitions apply. Reading at any address within erase-suspended sectors
produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. See Write Operation Status on page 38 for information on
these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See Write Operation Status on page 38 for more
information.
34
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
The system may also write the autoselect command sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes
are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the
Erase Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence
on page 31 for more information.
The system must write the Erase Resume command (address bits are don’t care) to exit the erase suspend
mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
Figure 10.2 Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes
1. See Table 11.1 on page 36 for erase command sequence.
2. See DQ3: Sector Erase Timer on page 42 for more information.
February 1, 2012 S29AS016J_00_11
S29AS016J
35
D at a
S hee t
11. Command Definitions
Command
Sequence
(Note 1)
Cycles
Table 11.1 S29AS016J Command Definitions (Word Mode)
Bus Cycles (Notes 2–5)
First
Second
Addr
Data
RD
Third
Fourth
Fifth
Addr
Data
Addr
Data
Addr
Data
Sixth
Addr
Data
Addr
Data
1
RA
Reset (Note 7)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID,
Top Boot Block
6
555
AA
2AA
55
555
90
X01
227E
X0E
2203
X0F
2204
Device ID,
Bottom Boot Block
6
555
AA
2AA
55
555
90
X01
227E
X0E
2203
X0F
2203
Secured Silicon Sector Factory
Protect, Top Boot (Note 9)
4
555
AA
2AA
55
555
90
X03
0089/0009
Secured Silicon Sector Factory
Protect, Bottom Boot (Note 9)
4
555
AA
2AA
55
555
90
X03
0091/0011
Sector Group Protect Verify
(Note 10)
4
555
AA
2AA
55
555
90
(SA)X02
XX00/XX01
3
555
AA
2AA
55
555
88
Exit Secured Silicon Sector
4
555
AA
2AA
55
555
90
XXX
00
CFI Query (Note 11)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 12)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 13)
2
XXX
90
XXX
F0
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 14)
1
XXX
B0
Erase Resume (Note 15)
1
XXX
30
Autoselect (Note 8)
Read (Note 6)
Enter Secured Silicon Sector
Legend
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the
falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address
bits A19–A12 uniquely select any sector.
Notes
2. All values are in hexadecimal.
10. The data is 00h for an unprotected sector and 01h for a protected sector. See
“Autoselect Command Sequence” for more information.
3. Except for the read cycle and the fourth cycle of the autoselect command
sequence, all bus cycles are write cycles.
11. Command is valid when device is ready to read array data or when device is
in autoselect mode.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
12. The Unlock Bypass command is required prior to the Unlock Bypass Program
command.
1. See Table 7.1 on page 15 for description of bus operations.
5. Address bits A19–A11 are don’t cares for unlock and command cycles,
unless SA or PA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device
is in the autoselect mode, or if DQ5 goes high (while the device is providing
status data).
13. The Unlock Bypass Reset command is required to return to reading array
data when the device is in the unlock bypass mode. F0 is also acceptable.
14. The system may read and program in non-erasing sectors, or enter the
autoselect mode, when in the Erase Suspend mode. The Erase Suspend
command is valid only during a sector erase operation.
15. The Erase Resume command is valid only during the Erase Suspend mode.
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. For top boot, 89h = factory locked, 09h = not factory locked. For bottom boot,
91h = factory locked, 11h = not factory locked.
36
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Command
Sequence
(Note 1)
Cycles
Table 11.2 S29AS016J Command Definitions (Byte Mode)
Bus Cycles (Notes 2–5)
First
Second
Addr
Data
Third
Fourth
Fifth
Addr
Data
Addr
Data
Addr
Data
Sixth
Addr
Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
4
AAA
AA
555
55
AAA
90
X00
01
6
AAA
AA
555
55
AAA
90
X02
7E
X1C
03
X1E
04
6
AAA
AA
555
55
AAA
90
X02
7E
X1C
03
X1E
03
Secured Silicon Sector Factory
Protect, Top Boot (Note 9)
4
AAA
AA
555
55
AAA
90
X06
89/09
Secured Silicon Sector Factory
Protect, Bottom Boot (Note 9)
4
AAA
AA
555
55
AAA
90
X06
91/11
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Manufacturer ID
Device ID,
Autoselect (Note 8)
Top Boot Block
Device ID,
Bottom Boot Block
Sector Group Protect Verify
(Note 10)
Enter Secured Silicon Sector
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector
4
AAA
AA
555
55
AAA
90
XXX
00
CFI Query (Note 11)
1
AA
98
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program (Note 12)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 13)
2
XXX
90
XXX
F0
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase Suspend (Note 14)
1
XXX
B0
Erase Resume (Note 15)
1
XXX
30
Legend
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the
falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of
WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address
bits A19–A12 uniquely select any sector.
Notes
2. All values are in hexadecimal.
10. The data is 00h for an unprotected sector and 01h for a protected sector. See
“Autoselect Command Sequence” for more information.
3. Except for the read cycle and the fourth cycle of the autoselect command
sequence, all bus cycles are write cycles.
11. Command is valid when device is ready to read array data or when device is
in autoselect mode.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
12. The Unlock Bypass command is required prior to the Unlock Bypass Program
command.
1. See Table 7.1 on page 15 for description of bus operations.
5. Address bits A19–A11 are don’t cares for unlock and command cycles,
unless SA or PA required.
13. The Unlock Bypass Reset command is required to return to reading array
data when the device is in the unlock bypass mode. F0 is also acceptable.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device
is in the autoselect mode, or if DQ5 goes high (while the device is providing
status data).
14. The system may read and program in non-erasing sectors, or enter the
autoselect mode, when in the Erase Suspend mode. The Erase Suspend
command is valid only during a sector erase operation.
15. The Erase Resume command is valid only during the Erase Suspend mode.
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. For top boot, 89h = factory locked, 09h = not factory locked. For bottom boot,
91h = factory locked, 11h = not factory locked.
February 1, 2012 S29AS016J_00_11
S29AS016J
37
D at a
S hee t
12. Write Operation Status
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 12.1 on page 42 and the following subsections describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or
in progress. These three bits are discussed first.
12.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum
programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7.
This is analogous to the complement/true datum output described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to 1; prior to this, the device outputs the complement, or 0. The
system must provide an address within any of the sectors selected for erasure to read valid status information
on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data, it can read valid data (at
DQ7–DQ0 in byte mode or DQ15–DQ0 in word mode) on the following read cycles. This is because DQ7 may
change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. Figure 18.7 on page 50,
illustrates this.
Table 12.1 on page 42 shows the outputs for Data# Polling on DQ7. Figure 12.2 on page 41 shows the Data#
Polling algorithm.
38
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Figure 12.1 Data# Polling Algorithm
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for
erasure. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
12.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
Table 12.1 on page 42 shows the outputs for RY/BY#. Figures Figure 18.1 on page 46, Figure 18.2
on page 47, Figure 18.5 on page 49 and Figure 18.6 on page 50 shows RY/BY# for read, reset, program,
and erase operations, respectively.
February 1, 2012 S29AS016J_00_11
S29AS016J
39
D at a
12.3
S hee t
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see DQ7: Data# Polling on page 38).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
algorithm is complete.
Table 12.1 on page 42 shows the outputs for Toggle Bit I on DQ6. Figure 12.2 on page 41 shows the toggle
bit algorithm in flowchart form, and Reading Toggle Bits DQ6/DQ2 on page 41 explains the algorithm.
Figure 18.8 on page 51 shows the toggle bit timing diagrams. Figure 18.9 on page 51 shows the differences
between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II on page 40.
12.4
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is
actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to Table 12.1 on page 42 to compare
outputs for DQ2 and DQ6.
Figure 12.2 on page 41 shows the toggle bit algorithm in flowchart form, and the section Reading Toggle Bits
DQ6/DQ2 on page 41 explains the algorithm. See also the DQ6: Toggle Bit I on page 40 subsection.
Figure 18.8 on page 51 shows the toggle bit timing diagram. Figure 18.9 on page 51 shows the differences
between DQ2 and DQ6 in graphical form.
40
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
12.5
She et
Reading Toggle Bits DQ6/DQ2
Refer to Figure 12.2 on page 41 for the following discussion. Whenever the system initially begins reading
toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling.
Typically, the system would note and store the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling,
the device has completed the program or erase operation. The system can read array data (at DQ7–DQ0 in
byte mode or DQ15–DQ0 in word mode) on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or
erase operation. If it is still toggling, the device did not complete the operation successfully, and the system
must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 12.2 on page 41).
Figure 12.2 Toggle Bit Algorithm
START
(Note 1)
Read DQ7–DQ0
Read DQ7–DQ0
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
(Notes 1, 2)
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes
1. Read toggle bit twice to determine whether or not it is toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5 changes to 1. See text.
February 1, 2012 S29AS016J_00_11
S29AS016J
41
D at a
12.6
S hee t
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a 1. This is a failure condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system tries to program a 1 to a location that is previously
programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device
halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a 1.
Under both these conditions, the system must issue the reset command to return the device to reading array
data.
12.7
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out also applies after each additional sector erase command.
When the time-out is complete, DQ3 switches from 0 to 1. The system may ignore DQ3 if the system can
guarantee that the time between additional sector erase commands will always be less than 50 μs. See
also Sector Erase Command Sequence on page 34.
After the sector erase command sequence is written, the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read
DQ3. If DQ3 is 1, the internally controlled erase cycle has begun; all further commands (other than Erase
Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device will accept additional
sector erase commands. To ensure the command has been accepted, the system software should check the
status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second
status check, the last command might not have been accepted. Table 12.1 shows the outputs for DQ3.
Table 12.1 Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
Erase
Suspend
Mode
Embedded Program Algorithm
Notes
1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See DQ5:
Exceeded Timing Limits on page 42 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
42
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
13. Absolute Maximum Ratings
Storage Temperature Plastic Packages
–65° C to +150° C
Ambient Temperature with Power Applied
–65° C to +125° C
Voltage with Respect to Ground
VCC (Note 1)
–0.5 V to +2.0 V
A9, RESET# (Note 2)
–0.5 V to +12.5 V
All other pins (Note 1)
–0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3)
200 mA
Notes
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of
up to 20 ns. See Figure 14.1 on page 43. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 14.2 on page 43.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9 and RESET# may overshoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 14.1 on page 43. Maximum DC input voltage on pin A9 is +11.0 V which may overshoot to
12.5 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
14. Operating Ranges
Description
Ambient Temperature (TA)
VCC Supply Voltages
Range
Industrial (I) Devices
–40°C to +85°C
Automotive In-Cabin (V) Devices
–40°C to +105°C
Standard Voltage Range
1.65V to 1.95V
Note
Operating ranges define those limits between which the functionality of the device is guaranteed.
Figure 14.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 14.2 Maximum Positive Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
February 1, 2012 S29AS016J_00_11
S29AS016J
43
D at a
S hee t
15. DC Characteristics
15.1
CMOS Compatible
Parameter
ILI
Description
Input Load Current
Test Conditions
Min
Typ
Max
(Automotive
In-Cabin
Devices)
Max
(Industrial
Devices)
VIN = VSS to VCC,
VCC = VCC max
±1.0
WP# Input Load Current
VCC = VCC max; WP# = VSS±0.2 V
–15
A9, RESET Input Load Current
VCC = VCC max; A9, RESET =11V
35
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Note 1)
ILI
Unit
µA
±1.0
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
8
1 MHz
2
12
4
CE# = VIL, OE# = VIH,
5 MHz
8
12
Word Mode
1 MHz
2
4
20
30
mA
ICC2
VCC Active Write Current
(Notes 2, 3)
CE# = VIL, OE# = VIH
ICC3
VCC Standby Current
CE#, RESET# = VCC±0.2 V
8
30
50
µA
ICC4
VCC Standby Current During Reset
RESET# = VSS ± 0.2 V
8
30
50
µA
ICC5
Automatic Sleep Mode (Note 4)
VIH = VCC ± 0.2 V;
VIL = VSS ± 0.2 V
15
70
100
µA
VIL
Input Low Voltage
–0.5
0.3 x VCC
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
VID
Voltage for Autoselect and Temporary
Sector Group Unprotect
VCC = 1.65 to 1.95 V
9.0
11.0
VOL
Output Low Voltage
IOL = 2.0 mA, VCC = VCC min
VOH1
Output High Voltage
VOH2
VLKO
0.25
IOH = –2.0 mA, VCC = VCC min
0.85 x VCC
IOH = –100 µA, VCC = VCC min
VCC–0.1
Low VCC Lock-Out Voltage (Note 3)
1.2
mA
V
1.4
Notes
1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 15 µA.
44
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
16. Test Conditions
Figure 16.1 Test Setup
Device
Under
Test
CL
Table 16.1 Test Specifications
Test Condition
Output Load Capacitance, CL
(including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
70
Unit
100
pF
3
ns
0.0 – 2.0
Input timing measurement reference levels
1.0
Output timing measurement reference levels
1.0
V
17. Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High-Z)
Figure 17.1 Input Waveforms and Measurement Levels
VCC
Input
VCC/2
Measurement Level
VCC/2
Output
0.0 V
February 1, 2012 S29AS016J_00_11
S29AS016J
45
D at a
S hee t
18. AC Characteristics
18.1
Read Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
Test Setup
70
Min
70
CE# = VIL
OE# = VIL
Max
70
OE# = VIL
Max
70
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
Output Enable to Output Delay
Max
25
tEHQZ
tDF
Chip Enable to Output High-Z (Note 1)
Max
25
tGHQZ
tDF
Output Enable to Output High-Z (Note 1)
Max
25
Read
Min
0
Toggle and
Data# Polling
Min
10
Min
0
tAXQX
tOEH
Output Enable
Hold Time (Note 1)
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
Unit
ns
Notes
1. Not 100% tested.
2. See Figure 16.1 on page 45 and Table 16.1 on page 45 for test specifications.
3. tRC must be same or longer than 70 ns right before read access to the flash (for devices with model numbers 01 and 02 only).
Figure 18.1 Read Operations Timings
tRC
Addresses Stable
Addresses
tACC
CE#
OE#
tDF
tOE
tSR/W
tOEH
WE#
tCE
HIGH Z
Outputs
tOH
Output Valid
HIGH Z
RESET#
RY/BY#
46
0V
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
18.2
She et
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded Algorithms) to
Read or Write (See Note)
Description
Max
35
µs
tREADY
RESET# Pin Low (NOT During Embedded Algorithms) to
Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
tRH
RESET# High Time Before Read (See Note)
tRPD
RESET# Low to Standby Mode
20
µs
tRB
RY/BY# Recovery Time
0
ns
500
50
Min
Note
Not 100% tested.
Figure 18.2 RESET# Timings
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms (Note 1)
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Note
1. CE# should only go low after RESET# has gone high. Keeping CE# low from power up through the first read could cause the first read to
retrieve erroneous data.
February 1, 2012 S29AS016J_00_11
S29AS016J
47
D at a
18.3
S hee t
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
tELFL/tELFH
Description
70
CE# to BYTE# Switching Low or High
Max
tFLQZ
BYTE# Switching Low to Output High-Z
Max
25
tFHQV
BYTE# Switching High to Output Active
Min
70
Unit
5
ns
Figure 18.3 BYTE# Timings for Read Operations
CE#
OE#
BYTE#
tELFL
BYTE#
Switching
from word
to byte
mode
Data Output
(DQ0–DQ14)
DQ0–DQ14
Data Output
(DQ0–DQ7)
Address
Input
DQ15
Output
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte to
word mode
Data Output
(DQ0–DQ7)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 18.4 BYTE# Timings for Write Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note
Refer to the Erase/Program Operations table for tAS and tAH specifications.
48
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
18.4
She et
Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
70
tAVWL
tAS
Address Setup Time
0
tWLAX
tAH
Address Hold Time
45
tDVWH
tDS
Data Setup Time
35
tWHDX
tDH
Data Hold Time
0
tOES
Output Enable Setup Time
0
Min
Read Recovery Time Before Write
(OE# High to WE# Low)
0
0
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
tWHEH
tCH
CE# Hold Time
0
tWLWH
tWP
Write Pulse Width
35
tWPH
Write Pulse Width High
tSR/W
Latency Between Read and Write Operations
tWHWL
Unit
70
ns
20
Min
20
Typ
6
Byte
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH2
tWHWH2
ns
6
µs
Word
Sector Erase Operation (Note 2)
0.5
sec
tVCS
VCC Setup Time (Note 1)
50
µs
tRB
Recovery Time from RY/BY#
tBUSY
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 54 for more information.
Figure 18.5 Program Operation Timings
Read Status Data (last two cycles)
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
tVCS
VCC
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
February 1, 2012 S29AS016J_00_11
S29AS016J
49
D at a
S hee t
Figure 18.6 Chip/Sector Erase Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 38).
2. Illustration shows device in word mode.
Figure 18.7 Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
True
Valid Data
tBUSY
RY/BY#
Note
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
50
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Figure 18.8 Toggle Bit Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 18.9 DQ2 vs. DQ6 for Erase and Erase Suspend Operations
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note
The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector.
February 1, 2012 S29AS016J_00_11
S29AS016J
51
D at a
18.5
S hee t
Temporary Sector Group Unprotect
Parameter
JEDEC
All Speed Options
Unit
tVIDR
Std
VID Rise and Fall Time (See Note)
Description
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector Group Unprotect
Min
4
µs
Note
Not 100% tested.
Figure 18.10 Temporary Sector Group Unprotect/Timing Diagram
11 V
RESET#
0 or 1.95 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 18.11 Sector Group Protect/Unprotect Timing Diagram
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect/Unprotect
Data
60h
Valid*
Verify
60h
40h
Status
Sector GroupProtect: 150 µs
Sector Group Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note
For sector group protect, A6 = 0, A1 = 1, A0 = 0. For sector group unprotect, A6 = 1, A1 = 1, A0 = 0.
52
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
18.6
She et
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
Unit
70
ns
ns
tAVEL
tAS
Address Setup Time
Min
0
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tCPH
CE# Pulse Width High
Min
20
ns
tSR/W
Latency Between Read and Write Operations
Min
20
ns
Byte
Typ
6
Word
Typ
6
Typ
0.5
tEHEL
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
µs
sec
Notes
1. Not 100% tested.
2. See Erase and Programming Performance on page 54 for more information.
Figure 18.12 Alternate CE# Controlled Write Operation Timings
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
February 1, 2012 S29AS016J_00_11
S29AS016J
53
D at a
S hee t
19. Erase and Programming Performance
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
Parameter
0.5
10
s
Chip Erase Time
19.5
s
Byte Programming Time
6
Word Programming Time
6
150
µs
Chip Programming Time
Byte Mode
20
160
s
(Note 3)
Word Mode
14
120
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
µs
Excludes system level
overhead (Note 5)
Notes
1. Typical program and erase times assume the following conditions: 25°C, VCC = 1.8 V, 100,000 cycles, checkerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 11.1
on page 36 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
20. Package Pin Capacitance
Parameter Symbol
CIN
COUT
Parameter Description
Input Capacitance
Output Capacitance
Test Setup
VIN = 0
VOUT = 0
Package
Typ
Max
TSOP
4.0
6.0
BGA
4.2
5.0
TSOP
4.5
5.5
BGA
5.4
6.5
TSOP
5
6.5
Unit
pF
CIN2
CIN3
Control Pin Capacitance
WP# Pin Capacitance
VIN = 0
VIN = 0
BGA
3.9
4.7
TSOP
8.5
10.0
BGA
8.5
10.0
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
54
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
21. Physical Dimensions
21.1
TS 048 - 48-Pin Standard TSOP
2X
0.10
STANDARD PIN OUT (TOP VIEW)
2X (N/2 TIPS)
2X
2
0.10
0.10
1
A2
N
SEE DETAIL B
A
REVERSE PIN OUT (TOP VIEW)
3
B
1
N
E 5
N
+1
2
N
2
D1
0.25
9
A1
4
D
2X (N/2 TIPS)
e
5
C
SEATING
PLANE
B
A
B
N
+1
2
N
2
SEE DETAIL A
0.08MM
(0.0031")
b
M
C A-B S
6
7
WITH PLATING
7
(c)
c1
b1
SECTION B-B
BASE METAL
R
(c)
e/2
GAUGE PLANE
θ°
PARALLEL TO
SEATING PLANE
0.25MM (0.0098") BSC
X
C
L
X = A OR B
DETAIL A
DETAIL B
NOTES:
Jedec
MO-142 (D) DD
Symbol
A
A1
A2
b1
b
c1
c
D
D1
E
e
L
0
R
N
MAX
1.20
0.15
0.05
1.05
1.00
0.95
0.20
0.23
0.17
0.27
0.22
0.17
0.16
0.10
0.21
0.10
19.80 20.00 20.20
18.30 18.40 18.50
11.90 12.00 12.10
0.50 BASIC
0.70
0.50
0.60
8˚
0˚
0.20
0.08
48
MIN
NOM
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)
2
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP).
3
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
4
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF
CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT
HORIZONTAL SURFACE.
5
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS
0.15mm (.0059") PER SIDE.
6
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE
0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE
BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").
7
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND
0.25MM (0.0098") FROM THE LEAD TIP.
8
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE.
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
3355 \ 16-038.10c
Note
For reference only. BSC is an ANSI standard for Basic Space Centering.
February 1, 2012 S29AS016J_00_11
S29AS016J
55
D at a
21.2
S hee t
VBK048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 mm x 6.15 mm
0.10
D
(4X)
D1
A
6
5
7
e
4
E
SE
E1
3
2
1
H
PIN A1
CORNER
INDEX MARK
6
B
10
G
F
φb
E
D
C
SD
B
A
A1 CORNER
7
φ 0.08 M C
TOP VIEW
φ 0.15 M C A B
BOTTOM VIEW
0.10 C
A2
A
SEATING PLANE
A1
C
0.08 C
SIDE VIEW
NOTES:
PACKAGE
VBK 048
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.00
A1
0.18
---
---
A2
0.62
---
0.76
D
8.15 BSC.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
NOTE
OVERALL THICKNESS
BALL HEIGHT
6.15 BSC.
BODY SIZE
5.60 BSC.
BALL FOOTPRINT
E1
4.00 BSC.
MD
8
BALL FOOTPRINT
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
48
TOTAL BALL COUNT
0.35
---
0.43
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
---
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
BODY SIZE
E
DEPOPULATED SOLDER BALLS
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
BODY THICKNESS
D1
φb
4.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3338 \ 16-038.25b
56
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
21.3
She et
VDF048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 6.00 mm x 4.00 mm
0.05 C
(2X)
D1
A
D
e
7
e
SE
6
5
4
E
E1
3
2
1
L K J H G F E D C B A
A1 CORNER
INDEX MARK
A1 CORNER
B
NxØb
0.05 C
(2X)
TOP VIEW
10
6
Ø 0.08 M C
Ø 0.15 M C A B
BOTTOM VIEW
0.10 C
A2
A
A1
C
SEATING PLANE
0.08 C
SIDE VIEW
NOTES:
PACKAGE
VDF 048
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
6.00 mm x 4.00 mm NOM
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
NOM
MAX
A
0.76
0.86
1.00
NOTE
A1
0.16
---
---
A2
0.60
0.66
0.72
BODY THICKNESS
D
5.92
6.00
6.08
BODY SIZE
E
3.92
4.00
4.08
BODY SIZE
OVERALL THICKNESS
BALL HEIGHT
5.00 BSC.
E1
2.50 BSC.
MD
11
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
48
0.26
0.31
BALL FOOTPRINT
BALL FOOTPRINT
TOTAL BALL COUNT
0.36
BALL DIAMETER
e
0.50 BSC.
BALL PITCH
SD / SE
0.00/0.25
SOLDER BALL PLACEMENT
A1,D3,D4,E2-E5,
F2-F5,G2-G5,H3,H4,L6
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
D1
Øb
4.
DEPOPULATED SOLDER BALLS
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3424\ 16-038.25
February 1, 2012 S29AS016J_00_11
S29AS016J
57
D at a
S hee t
22. Revision History
Section
Description
Revision 01 (March 2, 2007)
Global
Initial release
Revision 02 (July 13, 2007)
Global
Sector Protection/Unprotection
Removed ACC description
Changed VID voltage range from 8.5 - 12.5 V to 9.0 - 11.0 V
Corrected and error in the sector group table
Revision 03 (October 29, 2007)
Ordering information
Deleted all Leaded package offerings
Table S29AS016J Autoselect Codes
(High Voltage Method)
Updated table
Table Primary Vendor-Specific
Extended Query
Corrected the data of CFI address 44 Hex
Unlock Bypass Command Sequence
Corrected the 2nd cycle data of the Unlock Bypass Command from '00' hex to 'F0' hex
Absolute Maximum Ratings
Under Note 2: Changed the maximum DC input voltage on pin A9 from 12.5V to 11.0V and its
overshoot from 14.0V to 12.5V
Table CMOS Compatible
Changed the parameter ILIT to ILI
Revision 04 (June 4, 2008)
Ordering Information
CMOS Compatible
TSOP and BGA Pin Capacitance
Distinctive Characteristics
Connection Diagram
Physical Dimension
Common Flash Memory Interface
Removed all 50 ns speed option and FBGA package offerings
Updated Valid Combination table
Updated Note 4
Changed Title to Package Pin Capacitance
Added WLCSP Information
Added WLCSP Package Option
Removed VBK048
Added WLCSP
Removed VBK048
Added WLCSP
Updated table Primary Vendor-Specific Extended Query
Revision 05 (August 19, 2008)
Sector Protection/Unprotection
Replaced entire section
Global
Modified all references to sector protection, sector unprotection, temporary sector unprotect, and
temporary sector unprotect to sector group protection, sector group unprotection, temporary sector
group unprotect, and temporary sector group unprotect
WLCSP Connection Diagram
Changed Pin from A18+ to A19
In-System Sector Group Protect/
Unprotect Algorithms
Added Note
Read Operations
Added note 3
Revision 06 (October 27, 2008)
Customer Lockable: Secured Silicon
Sector Programmed and Protected at
the Factory
Modified first bullet
TSOP and Pin Capacitance
Updated Table
58
Updated figure Secured Silicon Sector Protect Verify
S29AS016J
S29AS016J_00_11 February 1, 2012
Data
She et
Section
Description
Revision 07 (March 6, 2009)
Ordering Information
Updated the Valid Communication table
Connection Diagrams
Added VBK048
Special Handling Instructions
Added section
Package Pin Capacitance
Updated table
Physical Dimensions
Added VBK048
Table: Erase and Programming
Performance
Updated table
Revision 08 (July 14, 2009)
Global
Removed all references to WLCSP from data sheet.
Revision 09 (August 12, 2010)
Ordering Information
Added 03 and 04 model numbers. Added note regarding the deprecated use of model numbers 01
and 02
Read Operations
Modified note 3 to apply only to devices with model numbers 01 and 02.
Revision 10 (November 18, 2010)
Global
Added 6.0 mm x 4.0 mm package option - VDF 048
RESET#: Hardware Reset Pin
Added sentence regarding use of CE# with RESET#
RESET# Timings Figure
Added note.
Revision 11 (February 1, 2012)
Global
Ordering Information
DC Characteristics
February 1, 2012 S29AS016J_00_11
Added product support for Automotive In-Cabin temperature range
Added 90 ns speed grade support for Automotive In-Cabin products only
Added Low-halogen BGA (VBK048) ordering option
Added column for Automotive In-cabin temperature specific changes
S29AS016J
59
D at a
S hee t
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2007-2012 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
EcoRAM™ and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries.
Other names used are for informational purposes only and may be trademarks of their respective owners.
60
S29AS016J
S29AS016J_00_11 February 1, 2012