TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. ● Low Base Drive Requirement Application ● Ballast Lighting ● Charger Ordering Information Part No. Package Packing TS13005CK C0G TO-126 50pcs / Tube Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage @ VBE=0V VCES 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 3 A Collector Peak Current (tp <5ms) ICM 6 A Base Current IB 1.5 A Base Peak Current (tp <5ms) IBM 3 A PDTOT 20 Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature +150 TSTG -55 to +150 o Symbol Limit RӨJC 6.25 TJ Storage Temperature Range W o C C Thermal Performance Parameter Thermal Resistance - Junction to Case 1/5 Unit o C/W Version: A13 TS13005CK High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 10 uA Collector Cutoff Current VCE =400V, IB =0 ICEO -- -- 10 uA Emitter Cutoff Current VEB =7V, IC =0 IEBO -- -- 10 uA IC =0.4A, IB =0.1A VCE(SAT)1 -- 0.10 0.7 IC =1A, IB =0.25A VCE(SAT)2 -- 0.17 1 IC =2A, IB =0.5A VCE(SAT)3 -- 0.55 -- IC =1A, IB =0.25A VBE(SAT)1 -- -- 1.1 IC =2A, IB =0.5A VBE(SAT)2 -- -- 1.2 10 -- -- 15 -- 30 5 -- -- Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE =5V, IC =10mA DC Current Gain VCE =5V, IC =1A Hfe VCE =5V, IC =2A V V Forward Voltage Drop IF =2A Vf -- -- 2 V Turn On Time VCC =250V, IC =1A, tON -- 0.2 0.6 uS Storage Time IB1=IB2=0.2A, tp=25uS tSTG -- 2.7 4.5 uS tf -- 0.16 0.3 uS Duty Cycle<1% Fall Time Notes: Pulsed duration =380uS, duty cycle ≤2% 2/5 Version: A13 TS13005CK High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Safety Operation Area Figure 2. DC Current Gain Figure 3. Vce(sat) v.s IC Figure 4. Vbe(sat) v.s IC Figure 5. Power Derating 3/5 Version: A13 TS13005CK High Voltage NPN Transistor TO-126 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: A13 TS13005CK High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A13