TS13003 High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE(SAT) Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS13003CT B0 TO-92 1Kpcs / Bulk TS13003CT B0G TO-92 1Kpcs / Bulk TS13003CT A3 TO-92 2Kpcs / Ammo TS13003CT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Halogen free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V DC Collector Current IC Pulse o Total Power Dissipation @ Tc= 25 C PTOT Operating Junction Temperature A 3 1.5 W +150 o TSTG - 55 to +150 o Symbol Limit TJ Operating Junction and Storage Temperature Range 1.5 C C Thermal Performance Parameter RӨJA Junction to Ambient Thermal Resistance 1/5 122 Unit o C/W Version: I13 TS13003 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 1mA, IB = 0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V Collector Cutoff Current VCB = 700V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 9V, IC = 0 IEBO -- -- 1 uA IC / IB = 0.5A / 0.1A VCE(SAT)1 -- 0.25 0.5 IC / IB = 1.0A / 0.25A VCE(SAT)2 -- 0.5 1 IC / IB = 1.5A / 0.5A VCE(SAT)3 -- 1.2 3 IC / IB = 0.5A / 0.1A VBE(SAT)1 -- -- 1 IC / IB = 1.0A / 0.25A VBE(SAT)2 -- -- 1.2 6 -- 40 20 -- 40 6 -- 35 fT 4 -- -- MHz Cob -- 21 -- pF Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* VCE = 5V, IC = 10mA DC Current Gain* VCE = 10V, IC = 400mA hFE VCE = 2V, IC = 1A V V Dynamic Characteristics Frequency VCE = 10V, IC = 0.1A Output Capacitance VCB = 10V, f = 0.1MHz Resistive Load Switching Time (Ratings) Delay Time VCC = 125V, IC = 1A, td -- 0.05 0.2 uS Rise Time IB1 = IB2 = 0.2A, tr -- 0.5 1 uS Storage Time tp = 25uS tSTG -- 2 4 uS Fall Time Duty Cycle ≤1% tf -- 0.4 0.7 uS * Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2/5 Version: I13 TS13003 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/5 Version: I13 TS13003 High Voltage NPN Transistor TO-92 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: I13 TS13003 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: I13