TS13003

TS13003
High Voltage NPN Transistor
TO-92
PRODUCT SUMMARY
Pin Definition:
1. Emitter
2. Collector
3. Base
BVCEO
400V
BVCBO
700V
IC
1.5A
VCE(SAT)
Features
1V @ IC =0.5A, IB =0.1A
Block Diagram
●
High Voltage
●
High Speed Switching
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TS13003CT B0
TO-92
1Kpcs / Bulk
TS13003CT B0G
TO-92
1Kpcs / Bulk
TS13003CT A3
TO-92
2Kpcs / Ammo
TS13003CT A3G
TO-92
2Kpcs / Ammo
Note: “G” denote for Halogen free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
DC
Collector Current
IC
Pulse
o
Total Power Dissipation @ Tc= 25 C
PTOT
Operating Junction Temperature
A
3
1.5
W
+150
o
TSTG
- 55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
1.5
C
C
Thermal Performance
Parameter
RӨJA
Junction to Ambient Thermal Resistance
1/5
122
Unit
o
C/W
Version: I13
TS13003
High Voltage NPN Transistor
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 700V, IE = 0
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
1
uA
IC / IB = 0.5A / 0.1A
VCE(SAT)1
--
0.25
0.5
IC / IB = 1.0A / 0.25A
VCE(SAT)2
--
0.5
1
IC / IB = 1.5A / 0.5A
VCE(SAT)3
--
1.2
3
IC / IB = 0.5A / 0.1A
VBE(SAT)1
--
--
1
IC / IB = 1.0A / 0.25A
VBE(SAT)2
--
--
1.2
6
--
40
20
--
40
6
--
35
fT
4
--
--
MHz
Cob
--
21
--
pF
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
VCE = 5V, IC = 10mA
DC Current Gain*
VCE = 10V, IC = 400mA
hFE
VCE = 2V, IC = 1A
V
V
Dynamic Characteristics
Frequency
VCE = 10V, IC = 0.1A
Output Capacitance
VCB = 10V, f = 0.1MHz
Resistive Load Switching Time (Ratings)
Delay Time
VCC = 125V, IC = 1A,
td
--
0.05
0.2
uS
Rise Time
IB1 = IB2 = 0.2A,
tr
--
0.5
1
uS
Storage Time
tp = 25uS
tSTG
--
2
4
uS
Fall Time
Duty Cycle ≤1%
tf
--
0.4
0.7
uS
* Note: pulse test: pulse width ≤300uS, duty cycle ≤2%
2/5
Version: I13
TS13003
High Voltage NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
3/5
Version: I13
TS13003
High Voltage NPN Transistor
TO-92 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: I13
TS13003
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: I13